Etude et modélisation des dégradations des composants de puissance grand gap soumis à des contraintes thermiques et électriques

Abstract : This work aims to investigate the robustness of three generations of power SiC MOSFETs (SiliconCarbide Metal Oxide Semiconductor Field E_ect Transistors). Several approaches are followed :electrical characterization, device modeling, ageing tests and physical simulation. An improvedcompact model based on an accurate parameters extraction method and one electrical characterization results is presented. The parameters extracted precisely from the model (thresholdvoltage, saturation region transconductance...) are used to accurately analyze the static behaviorof two generations of SiC MOSFETs. The robustness of these devices are investigated bytwo tests : HTRB (High Temperature Reverse Bias) stress and an ESD (Electrostatic Discharge)stress. Physical simulation is conducted to understand the impact of the temperature and thephysical parameters on the device electrical characterizations.
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Wadia Jouha. Etude et modélisation des dégradations des composants de puissance grand gap soumis à des contraintes thermiques et électriques. Electronique. Normandie Université; Université Abdelmalek Essaâdi (Tétouan), 2018. Français. ⟨NNT : 2018NORMR083⟩. ⟨tel-02144322v2⟩

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