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Theses

Etude structurale et cartographie du dopage dans des oxydes nanostructurés à base de sillicium.

Abstract : The change of silicon optical and electrical properties induced by size reduction, due to the quantum confinement of charged carriers, is a well-known effect and allowed to develop new optoelectronic devices. As in bulk silicon, doping should allow to optimize these properties in nanostructured silicon. However, the characteristics of doping of nanostructured silicon still misunderstood and many questions, concerning the location of impurities and their activation state, remain unanswered. Moreover, in these materials, the environment of impurities seems to inuence strongly all of their properties. The purpose of this thesis is to get a better understanding of structural characteristics of doping at the atomic scale in function of the nature of the impurity, the host matrix, and the elaboration technic. In this way, we have investigated two di_erent systems using atom probe tomography. The first concerns a rare earth doping of hafnium silicates. We have evidenced that the clustering of HfO2 nano-grains crystallized in their cubic form induced an efficient energy transfer with praseodymium ions. The second system concern the n and p type doping of silicon nanocrystals embedded in silica. We have demonstrated the important introduction of n type impurities (As, P) in the core of every nanocrystals, independently of the elaboration technic. This introduction of impurities should allow the formation of highly doped silicon nanocrystals. A different behavior has been observed in the case of p type doping, represented by the aggregation of Boron at the interface between the nanocrystals and the silica matrix.
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Submitted on : Friday, January 31, 2020 - 3:25:20 PM
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Rémi Demoulin. Etude structurale et cartographie du dopage dans des oxydes nanostructurés à base de sillicium.. Science des matériaux [cond-mat.mtrl-sci]. Normandie Université, 2019. Français. ⟨NNT : 2019NORMR086⟩. ⟨tel-02462570v2⟩

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