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Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires

Louise Fouquat 1
1 INL - H&N - INL - Hétéroepitaxie et Nanostructures
INL - Institut des Nanotechnologies de Lyon
Abstract : Miniaturization of micro- and opto-electronics devices has led to the development of nanotechnologies. At this scale, the density of interfaces drastically increases explaining their critical role in the device performances. In this thesis, interest has been focused on interactions at the interfaces between heterogeneous materials during their first growth stages by molecular beam epitaxy. Each chapter studies a specific interface with the objective of monolithically integrating III-V semiconductors (GaAs) on silicon substrate, which is a main goal of the INL’s Heteroepitaxy and Nanostructures team. Two complementary approaches have been considered: GaAs nanowires on Si (111) substrate and the research of a Zintl phase as a buffer layer adequate for the two-dimensional (2D) growth of GaAs on a SrTiO3 / Si (100) substrate. In the context of growing GaAs nanowires on Si(111) with gallium as catalyst, the role played by a silica overlayer has been studied by X-Ray Photoelectron Spectroscopy. It has been shown that an oxido-reduction reaction takes place at the interface, reaction which is strongly dependent on the temperature during the process. Besides, the real-time evolution of an As capping/decapping mechanism, which is needed for the protection of GaAs nanowires during transfers, has been studied thanks to electron transmission microscopy. Finally, the growth of a metal half-shell on GaAs nanowires has been investigated by in situ grazing incidence X-ray diffraction using synchrotron radiation. This exploratory study has shown that obtaining a partially epitaxial growth of gold and aluminum on nanowires facets is possible. In the context of obtaining a 2D growth of GaAs on SrTiO3/Si(100) substrate, the growth of the theoretically-suggested Zintl phase SrAl2 was tried by MBE and probed by photoemission, along with an alternative, BaGe2, which appeared more suitable for chemical reasons.
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Submitted on : Wednesday, April 24, 2019 - 11:24:14 AM
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  • HAL Id : tel-02108255, version 2


Louise Fouquat. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires. Autre. Université de Lyon, 2018. Français. ⟨NNT : 2018LYSEC045⟩. ⟨tel-02108255v2⟩



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