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Etude de la Fiabilité des Transistors HEMTs AIGaN/GaN de puissance en condition opérationnelle

Abstract : This PhD Thesis is about the reliability of enhancement Gallium Nitride high electron mobility power transistors, recently on the market. This work is focused on physics of failure analysis on aged devices under real mission switching profiles. A novel stress bench able of stablish real operating conditions on a transistor without using a load, so minimizing energy consumption. Also, the circuit has two additional devices that undergo separate current and voltage stresses and are used for better understanding of degradations on main device under test. Electric characterization of aged devices allows determination of failure modes. Decapsulation and sample preparation procedures at different scales were developed to access the active zone of the devices and perform micro-structural analyses by the means of spectral photoemission, scanning and transmission electronic microscopies. Then, failure mechanisms are correlated with the corresponding modes.
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Submitted on : Monday, June 11, 2018 - 9:36:36 AM
Last modification on : Thursday, May 16, 2019 - 1:18:02 PM
Long-term archiving on: : Wednesday, September 26, 2018 - 5:07:49 PM


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  • HAL Id : tel-01811918, version 2


Andres Echeverri Duarte. Etude de la Fiabilité des Transistors HEMTs AIGaN/GaN de puissance en condition opérationnelle. Electronique. Normandie Université, 2018. Français. ⟨NNT : 2018NORMR014⟩. ⟨tel-01811918v2⟩



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