Skip to Main content Skip to Navigation
Theses

Epitaxie d'hétérostructures combinant oxydes fonctionnels et semiconducteurs III-V pour la réalisation de nouvelles fonctions photoniques

Benjamin Meunier 1
1 INL - H&N - INL - Hétéroepitaxie et Nanostructures
INL - Institut des Nanotechnologies de Lyon
Abstract : Diversification of the materials and functionalities integrated on silicon is an important issue for further progression in the field of micro-optoelectronics. The monolithic heterogeneous integration of new materials on silicon, and more generally the combination on the same wafer of materials having different physical properties is a key challenge. Amongst the materials of interest, III-V semiconductors are the object of specific attention because their optoelectronic and transport properties are superior to those of silicon. Similarly, the so-called functional oxides have interesting physical properties (ferroelectricity, ferromagnetism, piezoelectricity, etc.) making them suitable for various applications (NVM, energy harvesters, MEMS . . . ). In this context, the goal of this thesis is to demonstrate the possible integration of crystalline functional oxides on GaAs-based heterostructures using epitaxy and that such structures show new properties for photonic. More precisely, we focused on integration PZT thin film on InGaAs/GaAs quantum wells structures thanks to SrTiO3 (STO) buffer layer. We first studied and developed the growth of STO on GaAs templates using molecular beam epitaxy (MBE). Because of the strong heterogeneity between the two materials, specific interface engineering strategies are required. We highlight the benefit of a Ti-based GaAs surface treatment on the structural quality of STO. For these studies we used photoelectrons spectroscopy (XPS, in-situ and collaboration with TEMPO beam line of SOLEIL synchrotron) and transmission electron spectroscopy (TEM, collaboration with LPN/C2N). Those experiments allowed us to probe both structural and chemical aspects of the semiconductor/ oxide interface. We also studied the growth mechanism of STO on GaAs through in-situ XPS experiments at SOLEIL. Thanks to the understanding of those specifics mechanisms, we could accommodate the growth conditions to obtain good quality STO buffer layers. Then we studied the growth of thin film PZT on InGaAs/GaAs quantum well structures by means of STO templates. We first showed that standard growth process (sol-gel and pulsed laser deposition at IEF/C2N) lead to strong deterioration of quantum well due to chemical reactions between the oxide and the III-V material. We studied the mechanisms involved in this deterioration and highlight the strong chemical affinity between As, Pb and Sr. To palliate this difficulty, the growth process of PZT has been modify and an AlAs “sacrificial” layers has been added in order to limit the oxygen difiusion into the substrate. Thanks to these two solutions, it has been possible to realize a PZT ferroelectric thin film on an InGaAs/GaAs quantum well heterostructure. A tunable source based on such heterostructure has been designed. In this device, the strain induced in the ferroelectric PZT by an electric field is transmitted to the substrate and the quantum well modifying its emitted wavelength. We simulated this device in order to optimize its dimensions. Then we realized this device (collaboration with IEF/C2N) and measured its mechanical and optical properties under an electric field. We also performed preliminary studies in order to demonstrate the possible integration of GaAs-based heterostructures on Si substrates in by the means of STO buffer layer. We considered the use of Zintl- Klemm compounds to minimize the interface energy between GaAs and STO allowing 2D growth of the semiconductor on the oxide.
Document type :
Theses
Complete list of metadatas

Cited literature [133 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-01511702
Contributor : Abes Star :  Contact
Submitted on : Friday, April 21, 2017 - 2:56:09 PM
Last modification on : Wednesday, July 8, 2020 - 12:44:02 PM
Long-term archiving on: : Saturday, July 22, 2017 - 1:20:58 PM

File

TH_T2530_bmeunier.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-01511702, version 1

Citation

Benjamin Meunier. Epitaxie d'hétérostructures combinant oxydes fonctionnels et semiconducteurs III-V pour la réalisation de nouvelles fonctions photoniques. Autre. Université de Lyon, 2016. Français. ⟨NNT : 2016LYSEC032⟩. ⟨tel-01511702⟩

Share

Metrics

Record views

371

Files downloads

298