Skip to Main content Skip to Navigation
Theses

BOÎTES ET FILS DE GE SUR SI(001) ORDONNÉS À LONGUE DISTANCE PAR DES RÉSEAUX DE DISLOCATIONS DE FLEXION

Abstract : The growth of ordered semiconductor nanostrucutres, with a controled size and position, is an major technologic chalenge. In this study, we propose an original methode to grow by molecular beam epitaxy ordered germanium nanostructures on silicon (001). A periodic array of tilt dislocations is obtained by molecular bounding, and induce a periodic strain field at the surface of the substrate. The observed organization of germanium nanostructures is due to the strain field generated on the silicon surface by an interfacial tilt dislocation array.
Document type :
Theses
Complete list of metadata

https://tel.archives-ouvertes.fr/tel-00134942
Contributor : Valier Poydenot <>
Submitted on : Tuesday, March 6, 2007 - 12:04:06 AM
Last modification on : Friday, July 10, 2020 - 7:58:31 AM
Long-term archiving on: : Wednesday, April 7, 2010 - 1:24:56 AM

Identifiers

  • HAL Id : tel-00134942, version 1

Collections

UJF

Citation

Valier Poydenot. BOÎTES ET FILS DE GE SUR SI(001) ORDONNÉS À LONGUE DISTANCE PAR DES RÉSEAUX DE DISLOCATIONS DE FLEXION. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨tel-00134942v1⟩

Share

Metrics

Record views

12

Files downloads

191