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BOÎTES ET FILS DE GE SUR SI(001) ORDONNÉS À LONGUE DISTANCE PAR DES RÉSEAUX DE DISLOCATIONS DE FLEXION

Abstract : The growth of ordered semiconductor nanostrucutres, with a controlled size and position, is an major technologic challenge. In this study, we propose an original method to grow by molecular beam epitaxy ordered germanium nanostructures on silicon (001). A periodic array of tilt dislocations is obtained by molecular bounding, and induces a periodic strain field at the surface of the substrate. The observed organization of germanium nanostructures is due to the strain field generated on the silicon surface by an interfacial tilt dislocation array.
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https://tel.archives-ouvertes.fr/tel-00134942
Contributor : Valier Poydenot <>
Submitted on : Monday, September 3, 2007 - 1:43:21 PM
Last modification on : Wednesday, November 4, 2020 - 2:45:39 PM
Long-term archiving on: : Tuesday, September 21, 2010 - 1:32:55 PM

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  • HAL Id : tel-00134942, version 2

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Valier Poydenot. BOÎTES ET FILS DE GE SUR SI(001) ORDONNÉS À LONGUE DISTANCE PAR DES RÉSEAUX DE DISLOCATIONS DE FLEXION. Physique [physics]. Université Joseph-Fourier - Grenoble I, 2005. Français. ⟨tel-00134942v2⟩

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