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Analyse en profondeur des défauts de l'interface Si-SiO2 par la technique du pompage de charges

Abstract : The purpose of this work is to contribute to a better electrical characterization of the Silicon-Oxide interface.
The first two sections are dedicated to the Si-SiO2 system and to the presentation of the characterization methods which allow informations on the « slow » states, i.e. states located into the oxide near the interface and communicating with semiconductor by tunneling, to be obtained. In the third section a model which enables the extraction of the in-depth profile of the Si-SiO2 interface traps from charge pumping measurements is introduced. This model, which takes into account both, fast and slow states, is based on Shockley-Read-Halls statistics and on a tunneling model (Heiman and Warfield's model). Firstly this model is discussed. Then it is shown that the links made in some papers between the charge pumping curves and the existence of a non uniform doping near the source and drain region of the transistors have to be re-considered. The trap depth-profiles, obtained for the first time from the interface up to a tens of angströms into the oxide for various devices from different technologies are of the form : Nt(x) = Ntsexp(-x/d) + Nt0. The first term in this equation corresponds to the Si-SiO2 interface trap layer while Nt0 corresponds to defects located in the so called oxide transition layer. These results, substanciated in different ways, are in agreement with those provided by physical characterization methods of the interface. Two applications of the method are presented. The first one deals with the influence of the nitrogen concentration in RTCVD oxinitrides films on the parameters of the trap profiles. The second one is a study of the degradation of the Si-SiO2 interface under Fowler-Nordheim injection. It enables to answer the question of the evolution, under stress, of the slow state density with respect to that of the fast states. Finally, the comparison with noise spectrocopy allows a clear correlation between the evolution with the injection dose of the characteristics of the trap profiles and the slope of the 1/f noise spectra to be made.
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Contributor : Yves Maneglia <>
Submitted on : Sunday, May 23, 2004 - 7:13:59 PM
Last modification on : Wednesday, October 9, 2019 - 1:19:25 AM
Long-term archiving on: : Wednesday, November 23, 2016 - 5:21:44 PM


  • HAL Id : tel-00006006, version 2



Yves Maneglia. Analyse en profondeur des défauts de l'interface Si-SiO2 par la technique du pompage de charges. Physique [physics]. Institut National Polytechnique de Grenoble - INPG, 1998. Français. ⟨tel-00006006v2⟩



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