Service interruption on Monday 11 July from 12:30 to 13:00: all the sites of the CCSD (HAL, Epiciences, SciencesConf, AureHAL) will be inaccessible (network hardware connection).
Skip to Main content Skip to Navigation

A Methodology for designing SiC and GaN device based converters for automotive applications

Abstract : Wide band-gap (WBG) devices enable power converter designs at higher frequency, power density, and efficiency, as compared to silicon-based converters. The coexistence for SiC (Silicon Carbide) and GaN (Gallium Nitride) devices in the ranges 600-900 V motivates a specific study of these components and the development of methods to perform better selection relying on the application, particularly for automotive applications. The proposed methodology starts with static and dynamic tests performed on SiC and GaN devices to validate their models. GaN power devices allow the building of the most integrated converters. Here, an instrumented PCB (Printed Circuit Board) is developed to measure and estimate switching losses including the measurement points needed for this purpose. The parasitic elements of the PCB layout extracted by ANSYS Q3D and the measurement instrument models are also included in the simulation model. Thus, by means of an experimentally validated model, it will be possible to evaluate the total losses in an optimized circuit without probes. Meanwhile, for SiC devices, an evaluation board is used, and an estimating method for inductance parasitic extraction is performed. The switching loss estimation is an important step for power converter design. Moreover, the consequences of faster switching on the gate driver design and board layout generate new challenges for WBG-based converters. An accurate switching loss estimation is a helpful step because it allows for the adjustment of different circuit layouts based on the simulation results. However, the instrumented PCB does not predict the switching losses in an optimized converter, but only on the instrumented PCB. The simulation enables the prediction of switching losses in more realistic converters. Finally, a simulation for each target device (SiC and GaN) is developed considering the main parasitic elements and the measurement instrument models. Thus, the switching losses are computed and compared to experimental results. Since the whole system is validated, to compare the SiC and GaN devices for automotive applications, an optimized DC-DC converter simulation is used for comparing each device under different operation points of the converter.
Document type :
Complete list of metadata
Contributor : ABES STAR :  Contact
Submitted on : Friday, January 28, 2022 - 4:25:08 PM
Last modification on : Saturday, January 29, 2022 - 3:38:26 AM
Long-term archiving on: : Friday, April 29, 2022 - 9:36:31 PM


Version validated by the jury (STAR)


  • HAL Id : tel-03547596, version 1


Joao Soares de Oliveira. A Methodology for designing SiC and GaN device based converters for automotive applications. Electronics. Université de Lyon, 2021. English. ⟨NNT : 2021LYSEI084⟩. ⟨tel-03547596⟩



Record views


Files downloads