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Etude des phénomènes de piégeage sur la fiabilité à long terme des transistors à haute mobilité électronique en Nitrure de Gallium

Abstract : The main objective of this thesis is to study the trapping phenomena present in the structure of Gallium Nitride (GaN) high electron mobility transistors (HEMT) of both GH25 and GL2D technologies. The work presented in this thesis consists of two main parts. In the first part, we present the athermal A-DCTS technique as well as the protocols developed for the characterization of the traps located et the surface and/or in the GaN buffer. In the second part, we study the evolution of the traps generated by a long term aging (12000h) in RADAR operational conditions and by step stress of the GH25 and GL2D components.
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https://tel.archives-ouvertes.fr/tel-03425224
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Submitted on : Wednesday, November 10, 2021 - 5:10:51 PM
Last modification on : Thursday, November 11, 2021 - 4:00:02 AM

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  • HAL Id : tel-03425224, version 1

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Souhaila Bennouna. Etude des phénomènes de piégeage sur la fiabilité à long terme des transistors à haute mobilité électronique en Nitrure de Gallium. Science des matériaux [cond-mat.mtrl-sci]. Normandie Université, 2021. Français. ⟨NNT : 2021NORMR051⟩. ⟨tel-03425224⟩

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