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Contribution à la mesure temporelle et à la simulation en équilibrage harmonique de la stabilité d’impulsion à impulsion de transistors en technologie GaN

Abstract : This work describes, for the first time to our knowledge, a comparison of Pulse to Pulse (P2P) stabilities of an AlGaN/GaN HEMT experimentally extracted thanks to an on-wafer fully calibrated characterization system and on the other hand, from a Harmonic Balance (HB) two-tone simulation of a foundry-based model of the transistor. For the first time, Lanczos and Fejér factors are experimentally implemented in the time-domain characterization system in order to reduce the Gibbs phenomen on effects and to perform causal measurements.Thanks to these two tools, the complex envelopes of the microwave (RF) voltages and currents and the Low-Frequency (LF) drain current have been measured/simulated. The complex RF voltage/current envelopes at both ports of the DUT and the LF drain voltage/current have been simultaneously measured/simulated using a periodic irregular radar burst.The P2P stability criterion has been calculated, in this work, using two mathematical expressions (RMS/ET).These two methods are based on the use of the amplitude/phase or the real/imaginary of the measured/simulated (HB 2tone) complex envelopes of the RF output voltage. Ultra-short transient pulses(13ns) have been used. Simulation preliminary results are processing. They will constitute a solid preparation for the future work.
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https://tel.archives-ouvertes.fr/tel-03227245
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Submitted on : Monday, May 17, 2021 - 10:12:09 AM
Last modification on : Tuesday, May 18, 2021 - 3:23:17 AM

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  • HAL Id : tel-03227245, version 1

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Marwen Ben Sassi. Contribution à la mesure temporelle et à la simulation en équilibrage harmonique de la stabilité d’impulsion à impulsion de transistors en technologie GaN. Electronique. Université de Limoges, 2021. Français. ⟨NNT : 2021LIMO0018⟩. ⟨tel-03227245⟩

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