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Approche duale de modélisation TCAD et de caractérisations électriques approfondies pour la détermination de la signature et de la localisation des pièges dans les HEMT GaN sur substrat SiC

Abstract : GaN-based HEMTs have already demonstrated their supreme potential for all high power and high frequency applications. However, this technology suffers from limitations due to complex trapping/de-trapping mechanisms that occurs in the device and that are still not well understood. This trapping mechanism limits the RF performances but also undermines the device reliability. In this work, we have investigated the trapping mechanisms using different advanced measurements techniques (LF S-parameter measurements, I-DLTS, noise current spectral density) to identify the signature of traps.Thanks to SentaurusTCAD simulation, we have identified and understood the physical location of several traps in the device. This contribution would provide an efficient feedback for future technological improvements.
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https://tel.archives-ouvertes.fr/tel-03149025
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Submitted on : Monday, February 22, 2021 - 5:01:10 PM
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Mohamed Bouslama. Approche duale de modélisation TCAD et de caractérisations électriques approfondies pour la détermination de la signature et de la localisation des pièges dans les HEMT GaN sur substrat SiC. Electronique. Université de Limoges, 2020. Français. ⟨NNT : 2020LIMO0076⟩. ⟨tel-03149025⟩

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