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Epitaxie de couches d'alliages quaternaires à base d'InAIGaN pour les transistors de haute performance

Abstract : CEA is dedicated to working on Atomic and Alternative Energy, to advance clean technologies using science and technology. As part of these developments, CEA-LETI is developing high power transistors and low energy LEDs with several major companies. For high power transistors, the goal is to have components working at high voltage, and passing a current of up to 100A. The properties of GaN and its alloys are particularly appropriate for these components, when compared with the more traditional transistor materials such as silicon. Currently, GaN devices typically use a heteo-structure, with an AlGaN barrier grown on GaN layers. However, due to the difference in lattice parameter between these two materials, the device performance can be limited. In order to further improve the devices, in terms of performance and reliability, we have started to develop new barrier materials based on InAlN, which has the same lattice parameter as GaN. This PhD is a continuation of these initial developments, with the intention of adapting and developing these layers for specific applications, including the growth of quaternary films composed of InGaAlN.
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Submitted on : Wednesday, February 10, 2021 - 3:33:13 PM
Last modification on : Saturday, March 26, 2022 - 3:26:33 AM
Long-term archiving on: : Tuesday, May 11, 2021 - 7:26:45 PM


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  • HAL Id : tel-03137675, version 1



Mrad Mrad. Epitaxie de couches d'alliages quaternaires à base d'InAIGaN pour les transistors de haute performance. Science des matériaux [cond-mat.mtrl-sci]. Université Grenoble Alpes [2020-..], 2020. Français. ⟨NNT : 2020GRALY023⟩. ⟨tel-03137675⟩



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