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Study of HBT operation beyond breakdown voltage : Definition of a Safe Operating Area in this operation regime including the aging laws

Abstract : The development of new BiCMOS technology will be possible, thanks to the SiGe:CHBTs technological improvements to reach dynamic performance beyond 0.5 THz. Animportant aspect to be investigated is the Safe Operating Area (SOA) beyond the traditionalBVCEO. In fact, due to the complexity of future architectures of HBTs (likethe B55X from STMicroelectronics) and their nanoscale size, an increase of the wear-outmechanisms occurring in these transistors is expected. In addition, because of the increasingdependence of circuit design on software tools, it is expected that additional effortswill be required to develop more predictive compact models. Thus, the SOA sub-projectis designed to describe the functional safety area of nanoscale SiGe:C HBTs allowing thecompact model to take into account critical aspects.After a short introduction, a precise description of the transistor operations beyondthe breakdown voltage is detailed in the second chapter. The compact model HICUM isimproved to account for the mechanisms occurring in this region to accurately model theavalanche regime and the pinch-in effect. This new model is validated on TCAD simulationsand through electrical measurements on different devices, architecture, geometriesand temperatures.In the third chapter, the investigation is deepen towards the device border’s operation.A study of the pinch-in effect and the snapback behavior is therefore realized to understandthe operation limitations at high currents and voltages and a stable operation regime isintroduced.In the fourth chapter, accelerated aging tests are carried out at the boundaries of thesafe operating area to submit the transistor to thermal and hot carriers stresses during itsoperation. An aging model is developed to account for the wear-out mechanism occurringin that regime.To conclude, this work allowed to increase the modeling of SiGe HBTs at high voltagesand currents accounting for the wear-out mechanisms occurring in that operation regime.
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Submitted on : Tuesday, September 22, 2020 - 5:04:07 PM
Last modification on : Wednesday, September 23, 2020 - 4:13:44 AM


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  • HAL Id : tel-02945952, version 1


Mathieu Jaoul. Study of HBT operation beyond breakdown voltage : Definition of a Safe Operating Area in this operation regime including the aging laws. Electronics. Université de Bordeaux, 2020. English. ⟨NNT : 2020BORD0029⟩. ⟨tel-02945952⟩



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