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Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting

Abstract : III-nitride materials are excellent semiconductors presenting several interesting properties for photovoltaic and piezoelectric applications. At the same time, the epitaxial growth of these materials in the form of nanowires (NW) is even more interesting, because binary and heterostructured III-N NWs have a higher crystalline quality compared to the 2D and bulk counterparts. In these contexts, this work focuses on the plasma-assisted MBE (PA-MBE) growth of InGaN / GaN NWs and their characterization. Three main topics are addressed: the growth of axial InGaN heterostructures by PA-MBE, their optical characterization, and the study of the selective area growth (SAG) of GaN NWs on transferred graphene. These studies allowed me to obtain a rational control on the growth mode of InGaN heterostructures in a wide range of In contents (up to ~ 40%) and morphologies, to study their axial band edge profile, useful for the optimal design of the photovoltaic structure, and to demonstrate for the first time in the literature, that the SAG of GaN NWs on patterned mono-layer graphene is a possible and very promising strategy to improve their homogeneity. Also, preliminary tests have shown that the piezoelectric conversion capacity of GaN NWs can be improved by about 35% when integrating an In-rich InGaN insertion into their volume.All these results constitute a decisive step in the control and the comprehension of the properties of these nanostructures, and establish very encouraging perspectives for their integration in novel and efficient photovoltaic and piezoelectric nano-generators.
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Submitted on : Saturday, September 19, 2020 - 1:02:11 AM
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  • HAL Id : tel-02943345, version 1

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Martina Morassi. Growth of InGaN nanowires for photovoltaic and piezoelectric energy harvesting. Materials Science [cond-mat.mtrl-sci]. Université Paris Saclay (COmUE), 2018. English. ⟨NNT : 2018SACLS249⟩. ⟨tel-02943345⟩

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