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Synthèse par CVD/ALD sur grandes surfaces d'un sulfure de vanadium transparent et conducteur

Abstract : In the context of functional diversification (“More than Moore”), transition sulfides are currently being actively studied for original optical devices production. Some materials in this family have a lamellar structure, similar to graphene like vanadium sulfides. The synthesis of these lamellar films remains actively dominated by high-temperature CVD processes (> 550 ° C). However, in order to hope the development of a reliable synthesis methods, it's important to reduce this deposition temperature which leads to a poor uniformity and a poor conformity. In this work we have studied the potential of a chemical vapor deposition approach at low temperature (200 ° C). This method allow us to obtain an amorphous vanadium sulfide film on a 300 mm wafer and point out theirability to self-reorganize in order to obtain a lamellar film of V7S8 after thermal annealing. A 5.2nm film has interesting optical and electrical properties; this film is conductive with a carrier density of 1.1.1023 cm-3, the holes are the main charges carriers (type p), a mobility of 0.2 cm2. (Vs) -1, a conductivity of 1063 S.cm -1, an output work of 4.8 eV while preserving good transparency (transmittance of 75% for a wavelength of 550nm).
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Submitted on : Wednesday, September 2, 2020 - 9:55:11 AM
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  • HAL Id : tel-02927887, version 1

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Mathias Fraccaroli. Synthèse par CVD/ALD sur grandes surfaces d'un sulfure de vanadium transparent et conducteur. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes [2020-..], 2020. Français. ⟨NNT : 2020GRALT006⟩. ⟨tel-02927887⟩

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