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, The observation of the CIGS (1 1 10) Bragg diffraction (fully relaxed) in the RSM containing both the Si (115) and GaP (115), shows that the CIGS is (008) oriented along the growth direction. If assuming the CIGS is (400) oriented along the growth direction, then the diffraction, RSM is performed around GaP/Si (115) diffraction on 1744/S554, which is shown in Figure 4-14

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, Les matériaux semi-conducteurs sont des briques de base à la fois pour la conversion de l'énergie solaire et les technologies de l'information (micro et optoélectronique). Le silicium, en tant que matériau semi-conducteur le plus mature, est largement utilisé dans les industries de la microélectronique et du photovoltaïque, en raison de son abondance naturelle

L. Néanmoins, Si empêche à la fois une émission de lumière efficace et une absorption efficace, ce qui limite ses applications. De l'autre côté on trouve un grand nombre de semi-conducteur direct parmi les composés III-V qui sont donc particulièrement appréciés pour les applications en photonique, malgré des coûts de fabrication élevés. Ainsi, l'intégration des semi-conducteurs III-V sur silicium est considérée comme la pierre angulaire de l'intégration cohérente de la photonique dans la technologie du silicium mature et des cellules solaires à haut rendement et à faible coût

. Le-phosphure-de-gallium, GaP), qui présente un désaccord de maille 0,37% à température ambiante

L. Défauts-de-l'hétéroépitaxie-de-gap and S. De, tels que les dislocations, les micro-macles (MT) et les parois de domaines d'antiphase, peuvent limiter les propriétés électro-optiques des dispositifs finaux (rendement, durabilité?). L'objectif de la thèse est donc de caractériser les défauts structuraux et de développer des méthodes de caractérisation à l'échelle submicrométrique en d'améliorer les propriétés de la plateforme GaP / Si et de mieux les comprendre

, Le chapitre 1 décrit l'objectif du travail de thèse et introduit les défauts cristallins dans la plate-forme GaP / Si. Le chapitre 2 présente les techniques de croissance et de caractérisation

, GaP/Si partiellement relaxée plastiquement, à l'échelle globale (par diffraction des rayons X en laboratoire) et l'échelle sub-micrométrique en utilisant une technique à l'état de l'art, de diffractométrie de rayons X à balayage avec une résolution sub-micrométrique

, présente une analyse de plusieurs couches CIGS élaborée par CVD sur pseudo-substrats GaP/Si. Ceci met en évidence une croissance de type épitaxial CIGS (001) sur GaP/Si (001), Le dernier chapitre fait la synthèse des résultats et permet d'ouvrir des perspectives

. Dans, tous les pseudo-substrats GaP / Si sont basés sur des plaquettes de Si (001) de

, pouces avec un miscut de 4 ° ou 6 ° dans la direction, vol.110

. Avant-l'épitaxie-de-gap, Après la préparation, la plaquette de Si est immédiatement transférée dans la chambre MBE et chauffée à 800 ° C pour la déshydrogénation. Ensuite, la plaquette est ramenée à plus basse température pour l'épitaxie de GaP. Les méthodes de caractérisation incluent la diffraction des rayons X (DRX), microscope à force atomique (AFM), microscopie électronique en transmission

, Au chapitre 3, nous présentons l'analyse d'une couche de 200nm

, Les propriétés cristallines sont tout d'abord étudiées en DRX en laboratoire et révèlent une très faible densité de micro-macles, grâce à l'optimisation du procédé de préparation chimique, Une relaxation plastique de l'ordre de 50%

, Une technique à l'état de l'art, développée sur la ligne synchrotron ID01 (ESRF) a été employée pour étudier cet échantillon. Cette technique consiste à balayer, la surface de l'échantillon avec un faisceau sub-micrométrique, au voisinage des conditions de Bragg. Ceci permet d'extraire des informations de complexes de type déformation, tilt et longueur de corrélation locale. Ceci a permis de mettre en évidence une distribution de dislocations dans le pseudo-substrat GaP / Si. L'ensemble de données est analysé à l'aide d

, La résolution de l'inclinaison locale et de la déformation dans le plan est égale à 0,0036 ° et 0,01%, respectivement. Figure 2 a) Image de la cartographie en espace réciproque de la diffraction (004). b) Image de le microscope à force atomique (AFM) 5?m × 5?m en mode tapotement. c) Image de la microscopie électronique en transmission (TEM) en coupe transversale (220) de champ sombre (DF), L'inclinaison locale B et la déformation locale dans le plan 2 + sont mesurées

, )) est filtrée à l'aide d'une fonction de motifs binaires locaux (LBP) La fréquence spatiale des lignes à forte déformation le long de [-1-10] est mesurée à 1,91 µm -1 . Considérant que la densité des dislocations le long de [-1-10] mesurée par TEM est de 10 ?m -1 , on peut en conclure que la distribution des dislocations n'est pas homogène et que les dislocations à 60 ° sont susceptibles de former des paquets

, AFM (représentée sur la figure 2 b)) mesurée sur le même échantillon est également traitée par transformée de Fourier bidimensionnelle. La fréquence spatiale de

, Figure 5 ? / 2? balayages avec 2? compris entre 20 ° et 80 ° pour les échantillons 1743/S554, 1743/S597

, La RSM est réalisée autour de la diffraction GaP / Si (115) sur l'un des échantillons de CIGS élaboré sur GaP / Si

, 1 10) dans le RSM contenant à la fois le Si (115) et le GaP (115), montre que le CIGS est orienté (008) dans le sens de la croissance

L. Gap, Dans la figure de pôles, une diffraction claire en CIGS (112) est montrée, ainsi que les MT formés dans la couche CIGS. Un balayage longitudinal autour de la position du CIGS (112) a confirmé qu'il ne s'agissait pas d'une contribution d'artefact de GaP & Si (111), Si est également illustrée par des images de structure locale par HRTEM et par des figures de pôles, illustrées à la figure 7

U. Enfin and . Premier-essai-de-cellule-solaire-cigs-sur-un-pseudo-substrat-gap, Si non optimisé a été réalisé. L'efficacité quantique externe (EQE) a été mesuré pour la cellule solaire CIGS / GaP / Si, puis comparé à une cellule photovoltaïque de CIGS développée sur des substrats de verre dans les mêmes conditions, comme illustré à la figure 8

L. Gap and /. , Si présente un EQE similaire à celui du verre

, Cela ouvre des perspectives prometteuses pour la future couche développée sur des pseudosubstrats GaP / Si optimisés. Figure 6 Image de RSM de la diffraction CIGS (1 1 10) et GaP / Si

. De-tem-de-cigs-/-gap, Si b) la figure de pôle de CIGS / GaP / Si, qui montrent une diffraction nette de CIGS (112), ainsi que les formes de formation de MT dans la couche Les travaux sur la DRX avec une résolution sub-micrométrique pour la caractérisation de la structure locale sont publiés dans un article intitulé « A study of the strain distribution by scanning X-ray diffraction on GaP/Si for III-V monolithic integration on silicon, J. Appl. Crystallogr, vol.52

, Une autre partie du travail a été présentée lors de conférences scientifiques

A. Zhou, Y. Wang, A. Létoublon, I. Lucci, C. Cornet et al.,

Y. Eymery, M. Léger, L. Bahri, G. Largeau, L. Patriarche et al., Nano Beam X-ray Scattering on GaP/Si for III-V Monolithic Integration on Silicon, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02352639

-. O. Durand, A. Létoublon, C. Cornet, A. Zhou, N. Barreau et al., « CIGSe growth on a GaP/Si(001) platform : towards CIGS/Si tandem solar cells, Journées Nationales, pp.4-7, 2018.

O. Durand, A. Létoublon, C. Cornet, A. Zhou, N. Barreau et al.,

. Lincot, CIGS growth on a GaP/Si(001) platform : towards CIGS/Si tandem solar cells
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, Spring Meeting, 2019.

O. Durand, A. Létoublon, C. Cornet, A. Zhou, N. Barreau et al.,

S. Bidaud, M. Collin, F. Feifel, S. Dimroth, M. Bechu et al., « Studies on Si/CIGS Epitaxial Tandem Solar Cells

, Spring Meeting, 2019.

O. Durand, A. Létoublon, C. Cornet, A. Zhou, N. Barreau et al.,

T. Slimane, S. Bidaud, M. Collin, F. Feifel, S. Dimroth et al.,

A. Pinault-thaury, F. Jomard, D. Coutancier, D. Lincot, and «. Cigs, (001) platform : towards CIGS/Si tandem solar cells », proc. Of the EU PVSEC, vol.2019, pp.9-13, 2019.