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Analyse structurales de pseudo-substrats Gap/Si et d'hétérostructures CIGS/GaP/Si pour des applications photovoltaïques

Abstract : This thesis focuses on the characterization of the structural defects on a MBE-made GaP/Si pseudo-substrate. The main purpose concerns the structural quality of GaP epitaxial layer on Si substrate, as a cornerstone for the development of high-efficiency solar cell with relatively low cost. Firstly, the study focuses on the characterization of the distribution of dislocations in GaP on Si (001) vicinal substrate, with an advanced sub­micrometer-beam X-ray scattering method, K-Map. The local tilt and strain information are obtained through an analysis of the complex 5D dataset. This study reveals an anisotropic distribution of the dislocations along different crystallography directions, linked to the steps on the surface of Si substrate, and an inhomogeneous distribution of the dislocations, linked to the tendency to form bunches. The second part of the study is on the growth and characterization ofCIGS on GaP/Si, which is used to explore tandem junctions associating single crystalline silicon bottom cell. The CIGS is observed to be epitaxially grown on the GaP/Si pseudo substrate, combining the results collected from XRD, EDX and HRTEM. A first try of a CIGS/GaP/Si solar cell is realized on a non-optimized GaP/Si pseudo-substrate. The obtained EQE is similar to the one obtained with the CIGS solar cell grown on a traditional glass substrate with the optimised deposition parameters.
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Submitted on : Friday, August 28, 2020 - 11:38:28 AM
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Ang Zhou. Analyse structurales de pseudo-substrats Gap/Si et d'hétérostructures CIGS/GaP/Si pour des applications photovoltaïques. Matériaux. INSA de Rennes, 2019. Français. ⟨NNT : 2019ISAR0027⟩. ⟨tel-02924619⟩

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