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V. Chapitre, Stochasticité du bombardement ionique dans les nouvelles technologies de gravure : exemple du « simplified multi patterning

A. La,

. .. Le,

B. Le-procédé and R. .. , 126 2. Influence de la pression et de la puissance source

C. , Etat de l'art de la modification de SiN par un plasma H 2

, Rugosité de surface induite par l'exposition à un plasma d'hydrogène

, Observations TEM des espaceurs après exposition à un plasma H 2

D. .. Procédé-h-2-/-rps-sur-espaceur-nitrure-:-mise-en-Évidence-de-la-stochasticité-du-plasma-hydrogène, 141 1. Influence de la température du porte-substrat lors de la phase de retrait RPS sur la rugosité de surface

M. .. De-création-de-la-rugosité, 150 3.2. Mécanisme de gravure du SiN modifiée en plasma délocalisé

E. .. Conclusion,

V. .. Bibliographie-du-chapitre,

.. .. Conclusion,

, D'après ces résultats, il serait donc souhaitable de travailler avec des durées de plasma H 2 plus longues ou avec un flux d'ions plus importants. Cependant, il semblerait que

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