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. Le-même-masque, Dans un premier temps, l'interface OTC/homojonction est investiguée, notamment en étudiant l'influence d'une couche de passivation ultra-mince sur le passage des charges à l'interface. Dans un second temps, l'interface OTC/n + poly-Si est caractérisée, et l'étude de ces contacts est réalisée dans les deux cas également après recuit. Par ailleurs, le contact OTC/jonction étant réalisé sur toute la surface des cellules, l'objectif est d

, Contact OTC/homojonction p + et influence d'une couche de passivation ultramince Afin d'analyser la résistivité de contact de l'interface OTC/ homojonction p + en fonction de l'épaisseur d'une couche de passivation ultramince

, AlOx (ALD) de différentes épaisseurs ont été déposées puis activées par recuit FGA. Le dépôt pleine plaque de 50 nm d'AZO (ALD) a ensuite été réalisé puis des dépôts localisés de 50 nm d'ITO (PC) et de 600 nm d'Ag (PC). L'AZO (ALD) ne pouvant être réalisé localement par masquage, ce matériau a été gravé sélectivement dans une solution de HCl fortement diluée en fin de procédé, les zones préalablement recouvertes par l'ITO, Après le surdopage p + , réalisé par diffusion gazeuse sur des substrats de silicium de type n texturés, les couches d

/. Ito, PC) a été choisie pour ces échantillons afin de ne pas dégrader la couche de passivation mince lors de la pulvérisation cathodique. Suite aux mesures TLM, la courbe de ?contact AZO/p+ en fonction de l'épaisseur d'AlOx (ALD)

, Les valeurs de ?contact AZO/p+ dépassent alors fortement la limite de 100 m?.cm 2 fixée pour ce contact. L'intégration de la couche de passivation mince d'AlOx pour les cellules semble alors compromise en l'état. Afin d'améliorer le passage des charges à cette interface, il serait possible de réaliser ces dépôts d'AlOx sur des surfaces ayant subi un nettoyage HF pré-dépôt. En effet, ici, un rinçage ozoné ayant été réalisé avant le dépôt d'AlOx, une épaisseur d'oxyde supplémentaire d'environ 1nm était présente. Néanmoins, cet oxyde est utile pour améliorer l'homogénéité de la couche d'AlOx et ses propriétés passivantes. Ainsi, il sera probablement préférable, Il apparaît que les valeurs de résistivité augmentent fortement par l'insertion de 0,4 nm d'AlOx à l'interface

, les valeurs de résistivité de contact à l'interface OTC/n + poly-Si sont inférieures à l'objectif de 100 m?.cm 2 même avant le recuit. Néanmoins, une augmentation significative de ?contact OTC/n+ poly-Si peut être observée pour les échantillons présentant la bicouche recuite sous air : une telle augmentation est probablement liée à l'augmentation de la résistivité de la couche d'AZO (ALD) après un recuit sous air (voir partie III.2.2 p.83). Ainsi, le recuit sous atmosphère contrôlée (N 2 ) permet de limiter l'augmentation de ? contact OTC/n+ poly-Si et donc de stabiliser l'interface avec le n + poly-Si. Par ailleurs, un recuit des échantillons au sein d'un four à passage infrarouge à 550°C ne semble pas impacter la résistivité de contact OTC/n + poly-Si, Pour la monocouche d'ITO (PC) ainsi que pour la bicouche ITO (PC) / AZO (ALD)

, En effet, après la texturation des substrats de silicium, les surdopages bore et phosphore de part et d'autre du substrat ont été réalisés par diffusion gazeuse. Les substrats ont par la suite été nettoyés et ont subi un rinçage ozoné avant le dépôt de 100 nm d'OTC en surface, la sérigraphie et le recuit à 200°C et 300°C sous air pendant 20 minutes. Pour cette structure les performances attendues en VOC et JSC sont relativement faibles, Cette partie a pour but d'analyser le potentiel des structures de cellules à contacts passivés proposées dans la partie, p.42

, Ici comme pour les précédentes approches, après la texturation des substrats de silicium, le nettoyage des plaquettes a lieu, suivi d'un rinçage ozoné. Les plaquettes sont ensuite introduites au sein de la chambre LPCVD afin de subir un dépôt double face de 20 nm ou 30 nm de poly-Si intrinsèque (poly-Si (i)). Les couches de poly-Si (i) sont alors dopées par implantation PIII de bore en face avant et de phosphore en face arrière du dispositif, Les cellules intégrant du poly-Si dopé sur les deux faces du dispositif (voir Figure V-13 (c)) : ce procédé simplifié permet l'intégration bifaciale des couches de poly-Si dopées

, Les substrats sont par la suite nettoyés (HF) pour enlever l'oxyde résiduel avant le dépôt de 100 nm d'OTC, la sérigraphie et le recuit à 200°C et 300°C sous air pendant 5 minutes. Pour cette structure les performances en VOC et JSC devraient être améliorées par rapport aux structures précédentes, cette dernière présentant une passivation des contacts par la couche poly-Si sur oxyde déposée sur les deux faces

, Comparaison des performances obtenues sur les différentes structures de cellules Cette sous partie traitera dans un premier temps de la comparaison des structures contactées par l'ITO (PC) standard puis dans un second temps s'intéressera à l'impact du remplacement de cet ITO (PC) standard par un empilement ITO (PC)/AZO (ALD) moins agressif pour les contacts passivés

, Comparatif des différentes structures de cellules proposées

P. Dans-cette, les différentes structures de cellules fabriquées sont comparées, en utilisant une monocouche d'ITO (PC) comme OTC de référence. Par ailleurs, pour les cellules incluant des empilements poly-Si/SiOx/c-Si double face, seule les cellules incluant des couches de 30 nm de poly-Si sont étudiées

, impact de la température de recuit des cellules intégrant des monocouches d'ITO (PC) sur les paramètres I-V, il apparaît que le recuit des échantillons à 300°C est bénéfique. En effet, pour l'intégralité des dispositifs, une augmentation du VOC du JSC et des FF est observée. Ce gain peut être expliqué par l'amélioration des propriétés électriques mais aussi optiques des couches d'ITO suite à leur recuit à 300°C sous air

, Alors qu'on pourrait s'attendre à une hausse significative des performances en VOC et JSC de par la présence d'un contact passivé en face arrière, les performances ne sont pas supérieures : si une baisse des recombinaisons de surface semble être obtenue (amélioration du JSC), cette dernière est entièrement contre-balancée par une chute du FF. Cette chute du FF, ainsi que les faibles valeurs de J SC et V OC , sont probablement dues au procédé complexe de fabrication des cellules. En effet, la couche de barrière froide doit être entièrement enlevée par voie chimique afin de permettre une bonne prise de contact des OTC sur la couche de n + poly-Si. Il est possible que cette gravure dégrade les propriétés de passivation de surface et que des résidus de la barrière subsistent

, Références bibliographiques du Chapitre V

G. G. Untila, T. N. Kost, A. B. Chebotareva, and E. D. Kireeva, « Contact resistance of indium tin oxide and fluorine-doped indium oxide films grown by ultrasonic spray pyrolysis to diffusion layers in silicon solar cells, Sol. Energy Mater. Sol. Cells, vol.137, pp.26-33, 2015.

E. Bruhat, T. Desrues, B. Grange, D. Blanc-pélissier, and E. S. Dubois, « Bifacial crystalline silicon homojunction cells contacted with highly resistive TCO layers, AIP Conf. Proc, vol.1999, issue.1, p.40004, 2018.

E. Bruhat, T. Desrues, D. Blanc-pélissier, B. Grange, and E. S. Dubois, « Optimizing TCO Layers for Novel Bifacial Crystalline Silicon Homojunction Solar Cells Integrating Passivated Contacts, European Photovoltaic Solar Energy Conference and Exhibition, pp.610-613, 2018.

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P. Padhamnath, « Metal contact recombination in monoPoly TM solar cells with screenprinted & fire-through contacts, Sol. Energy Mater. Sol. Cells, vol.192, pp.109-116, 2019.

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, AZO (PC) peut ainsi être considérée comme une alternative intéressante aux dépôts standards d'ITO (PC) pour des applications nécessitant des recuits jusqu'à 350°C. Par ailleurs, lorsque déposées sur des couches minces d'a-Si:H (i), les couches d'AZO (PC) observent une réparation des propriétés de passivation des échantillons suite à l'étape de recuit, faisant de ces dépôts une alternative sans indium intéressante. Pour des utilisations sans recuit thermique, seules deux solutions semblent envisageables pour ne pas endommager la passivation de surface : les monocouches d'AZO (ALD) ou les bicouches ITO (PC)/AZO (ALD), propriétés de l'ITO (PC) et de l'AZO (PC) s'améliorent bien avec le recuit. L'AZO (PC) présente même une transmission effective supérieures à celle de l'ITO (PC). L'

, SiOx, a-Si:H (i)). De plus, les interactions entre ces couches minces diélectriques et les dépôts d'OTC semblent pour l'heure réduire leurs propriétés de passivation. Face à ces limitations, l'hydrogénation des interfaces par des empilements SiNx:H/AZO (ALD) et SiNx:H/AlOx/AZO (ALD) a été développée. Ces empilements diélectriques/OTC, très prometteurs, permettent quant à eux l'obtention d'i-VOC > 700 mV après recuit à haute température sur des substrats non surdopés et polis chimiquement. Ces propriétés de passivation sont néanmoins fortement diminuées par la texturation de surface et/ou la présence d'un surdopage homojonction de type p + ou n + . De plus, si les couches d'AZO (ALD) sont généralement très sensibles au recuit sous air qui les rend résistives, ce n'est pas le cas des empilements SiNx:H/AZO (ALD) et SiNx:H/AlOx/AZO (ALD) : une amélioration de la résistance par carré de la couche est constatée pour l'empilement SiNx:H/AlOx/AZO (ALD), Optimisation de la passivation Différentes approches ont été investiguées afin d'obtenir d'excellentes propriétés de passivation, compatibles avec des procédés de fabrication industriels. Les couches minces déposées sur sur-dopages homojonction, bien que prometteuses, conduisent pour l'instant à des valeurs de i-VOC trop faibles (< 700 mV) avec les matériaux testés ici

, Ces dernières permettent d'obtenir des valeurs de i-VOC supérieures à 720 mV après recuit de cristallisation, valeurs pouvant ensuite être encore améliorées par des procédés d'hydrogénation. Néanmoins, la finesse de ces couches nécessite une prise de contact par OTC car une sérigraphie de pâte traversante pourrait réduire les propriétés de passivation. L'implémentation sur ces jonctions d'empilements diélectriques/AZO permet non seulement l, Finalement, des couches minces de n + poly-Si/SiOx ont été développées dans ces travaux

E. Bruhat, T. Desrues, B. Grange, and H. Lignier, Danièle Blanc-Pélissier and Sébastien Dubois, TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties, Energy Procedia, vol.124, pp.829-833

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