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Développement de cellules photovoltaïques silicium à homojonction industrialisables à contacts passivés

Abstract : For the deployment of renewable energies, the development of cheaper and more efficient solar cells remains an issue to make photovoltaic electricity even more attractive. While homojunction-based silicon solar cell technologies dominate the global market, the performances of these structures can be further improved. Indeed, the direct contact between the metal grid and the highly doped junction is a source of recombination losses. To overcome these limitations, new structures are emerging such as silicon-based passivated contacts solar cells. These structures aim at integrating of passivating layers between the crystalline silicon substrate and the metal grid, thus drastically reducing the recombination phenomena within the devices. Silicon heterojunction (a-Si:H/c-Si) cells remain the most well-known passivated contact technology. Nevertheless, this mature technology is still limited by its fabrication process which is far from the industrial standard, and is hardly compatible with temperatures exceeding 250 ° C. In addition, the use of expensive and potentially toxic indium in the Transparent Conductive Oxide (TCO) layers has restrained up to now the expansion towards mass industrialization of the process. Thus, it is necessary to develop new passivated contacts technologies compatible with high temperature (above 800°C), implementable in a standard production line. This study explores new paths for passivating contact technologies thanks to ultrathin layers of oxides or dielectrics/TCO stacks deposited on silicon homojunctions as well as poly-silicon on thin oxide junctions. In order to limit the resistive losses and potentially limit recombination losses in the contacted areas, intermediate TCO layers have been developed. In this perspective, this works aims at investigating the development of Aluminum Zinc Oxide (AZO) layers by both Magnetron Sputtering (MS) and Atomic Layer Deposition (ALD) for passivated contact solar cells. These layers, also used in combination with dielectric materials have been integrated and then tested in photovoltaic devices.
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Submitted on : Friday, July 17, 2020 - 5:55:32 PM
Last modification on : Tuesday, October 20, 2020 - 11:30:16 AM


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  • HAL Id : tel-02902091, version 1


Elise Bruhat. Développement de cellules photovoltaïques silicium à homojonction industrialisables à contacts passivés. Energie électrique. Université de Lyon, 2019. Français. ⟨NNT : 2019LYSEI128⟩. ⟨tel-02902091⟩



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