Skip to Main content Skip to Navigation
Theses

Conception innovante de circuits logiques et mémoires en technologie CMOS/Magnétique

Abstract : After many studies in recent decades, emerging non-volatile memory technologies have recently taken off in the semiconductor market. Their main objective is to replace flash and DRAM memories that reach their limits in terms of density, miniaturization, consumption or speed improvement. Among the emerging technologies, the MRAM memory has been identified as a strong candidate to become a leading storage technology for future memory applications. That is why we propose in the first part the design of hybrid CMOS / Magnetic circuits of LUT type (Look Up Table) in STT-MRAM technology (Spin Transfer Torque) aiming to realize a demonstrator. The full custom design from A to Z of innovative LUTs has been implemented. We propose in the second part the design of a full memory in SOT (Spin Orbit Torque) technology, for which a patent has been deposited. Finally, in the last part, this type of memory SOT-MRAM as well as others of type STT-MRAM were integrated in a volatile processor to evaluate the possible interests of these magnetic technologies STT and SOT in this type of circuit.
Complete list of metadatas

Cited literature [75 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-02894684
Contributor : Abes Star :  Contact
Submitted on : Thursday, July 9, 2020 - 10:32:12 AM
Last modification on : Wednesday, October 14, 2020 - 4:10:02 AM

File

ALHALABI_2019_diffusion.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-02894684, version 1

Collections

STAR | CEA | DRT | LETI | CEA-GRE

Citation

Rana Alhalabi. Conception innovante de circuits logiques et mémoires en technologie CMOS/Magnétique. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2019. Français. ⟨NNT : 2019GREAT103⟩. ⟨tel-02894684⟩

Share

Metrics

Record views

55

Files downloads

529