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From silicen to Si films and clusters : silicon growth on Ag and layered materials studied by STM, GIXD and DFT

Abstract : In this work I summarize the studies conducted during my PhD, concerning the synthesis of silicene layers and thin Si films on Ag(111) and Si deposition on layered materials. I present original results which unveil interesting physical phenomena associated with the system under study. In a first part, I present the outcomes of a combined experimental and theoretical study, based on GIXD measurements and DFT simulations, aimed to determine the exact atomic arrangement of the silicene monolayer structures on Ag(111). Afterwards I focus on the atomic structure of Si thin films on Ag(111). I show, by means of GIXD measurements, that the Si film has a diamond bulklike structure with stacking faults. Finally, I determine the atomic structure of the reconstruction observed on top of the aforementioned diamond bulklike Si film by menas of GIXD measurements. Then, by combined STM and DFT studies I give an original picture for Si growth on Ag(111) above 1 ML Si coverage. In the last part of this Thesis, I report STM studies regarding Si evaporation on several layered materials: HOPG, MoS2, TiTe2 and ZrSe2. I show that on each of these substrates and both for room temperature and high temperature growth, Si evaporation results in the formation 3D Si nanoclusters.
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  • HAL Id : tel-02612244, version 1

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Alberto Curcella. From silicen to Si films and clusters : silicon growth on Ag and layered materials studied by STM, GIXD and DFT. Materials Science [cond-mat.mtrl-sci]. Sorbonne Université, 2018. English. ⟨NNT : 2018SORUS410⟩. ⟨tel-02612244⟩

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