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Application de la microscopie à sonde locale à l'étude de la surface de GaN(0001)

Abstract : This work deals with the gallium nitride (GaN) (0001) surface with gallium polarity. Indeed this particular orientation is used for the recent technological applications of this wide band-gap semiconductor. The experimental study of this surface is mainly based on the use of two local probe microscopies : atomic force microscopy (AFM) and scanning tunneling microscopy (STM). The GaN material is mainly grown by molecular beam epitaxy (MBE) on silicon (111) substrate. The atomic resolution images of surfaces of "reference" semiconductors such as Si, SiC and GaAs are presented in chapter 1 in order to illustrate the potentiality of the experimental system. The results concerning GaN(0001) surface are presented according to the imaging scale: above the micrometer in chapter 2, in the sub-micronic range in chapter 3, and at the nanometer scale in chapter 4. The ex situ AFM study of the surface morphology give evidence of a kinetic roughening phenomena. The use of vicinal surfaces is proposed to suppress the development of such roughening. On the other hand, the in situ STM imaging gives detailed informations on surface steps, on dislocation terminations at the surface, and finally on interaction between steps and dislocations. The atomic resolution is obtained for two reconstructions (2×2 and 4×4) corresponding to Ga stabilized surface. These reconstructions have also been recently observed by two other teams in different experimental conditions which are at the origin of a controversy. Eventually, we show that these two reconstructions are connected to the presence of arsenic at the surface.
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Stephane Vezian. Application de la microscopie à sonde locale à l'étude de la surface de GaN(0001). Science des matériaux [cond-mat.mtrl-sci]. Université de Nice-Sophia Antipolis, 2000. Français. ⟨tel-02527734⟩

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