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HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties

Abstract : Au-catalyzed growth of GaAs nanowires by HVPE technique has been demonstrated in Institut Pascal many years ago on GaAs substrates. However, the current trend is to integrate these nanowires on silicon substrates, which appears to be very useful for some applications. It is the subject of the present work to develop such process using HVPE which an exceptional length along with very good crystalline quality of nanowires. This manuscript is organized into three chapters. Chapter I is devoted to present the experimental process allowing to obtain such nanowires on Si(111) substrates by Au-catalyzed. It contains also a study of the dewetting of ultra-thin gold films on oxidized Si(111) substrates as function of different parameters, in which we show also by in-situ LEEM and LEED experiments how these droplets remove the SiO2 from the surface and pump silicon atoms from the substrate. The influence of these silicon atoms on the nucleation of GaAs nanowires is presented in chapter II through a thermodynamic model. Another model is also presented in the same chapter in which we study the incorporation of the amphoteric silicon atoms in the solid phase as function of different growth parameters. Chapter III consists in an investigation of charge and spin transport using a polarized µPL experiment on ultra-long GaAs nanowires produced by HVPE. We study the effect of the surface passivation of these nanowires by hydrazine solution and N2-palsma. We report record diffusion lengths for both charge and spin.
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  • HAL Id : tel-02515900, version 1

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Hadi Hijazi. HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties. Micro and nanotechnologies/Microelectronics. Université Clermont Auvergne, 2019. English. ⟨NNT : 2019CLFAC059⟩. ⟨tel-02515900⟩

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