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Innovative devices in FD-SOI technology

Abstract : The main purpose of this PhD work is to investigate the fundamentals of floating body effects (FBEs) in recent generations of ultrathin FDSOI devices. Several FBEs, (i) kink effect, (ii) gate-induced FBE, (iii) parasitic bipolar transistor, (iv) sharp switching, (v) current hysteresis, and (vi) transient and history effect (MSD), are scrutinized in terms of interaction between holes and electrons in ultrathin transistor body. The key point is that in an n-channel SOI MOSFET the FBEs are originated from the interplay of the excess holes which are either being stored or eliminated. For better understanding of FBEs, the body potential Vb has measured directly in H-gate body contact n-MOSFETs. The dynamic Vb variation has also been monitored successfully thanks to lateral P+ body contacts extended into the undoped-silicon film underneath the front-gate.Through the measurements of Vb, there are three major findings highlighted for the first time: (i) correlation between the onset of the FBEs and the Vb variation, (ii) new experimental evidence of super-coupling effect observed while the surface potential is changed from depletion to volume inversion, (iii) establishment of a new technique for extracting threshold voltage VT compared with the typical methods based on the current-voltage characteristics.Finally, innovative FDSOI devices such as back-gated InGaAs lateral N+NN+ MOSFET, and Z2-FET sensors, are characterized. We demonstrate the basic performance of the InGaAs-on-Insulator substrate by using Ψ-MOSFET technique. Sensing features of the Z2-FET are investigated under magnetic field or illumination.
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Submitted on : Thursday, March 12, 2020 - 11:30:49 AM
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  • HAL Id : tel-02506292, version 1



Hyungjin Park. Innovative devices in FD-SOI technology. Micro and nanotechnologies/Microelectronics. Université Grenoble Alpes, 2019. English. ⟨NNT : 2019GREAT039⟩. ⟨tel-02506292⟩



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