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Croissance, photoluminescence et électroluminescence de films de ZnO dopé terres rares

Abstract : This study deals with the elaboration and characterization of ZnO/Si type heterojunctions with various rare earths doping between 0,3 to 3,0 at% (Yb, Tb, Eu) of ZnO. Materials engineering based on the know-how of a CIMAP team has demonstrated remarkable light emission properties of such structures related to optical transitions of rare earths and especially following extreme heat treatments (up to 1373 K). These latter have indeed generated new phases with interesting properties. Moreover, the electroluminescence of these structures was explored and it revealed very high intensities upon thermal treatments at 973 K. These annealings gave rise to a configuration favorable to the emission of rare earth ions located more particularly in the space charge area of the heterojunction owing to rare earth diffusion at the ZnO:TR/Si interface. Finally, 65 nm thick multilayer structures consisting of ZnO:Ce, ZnO:Tb and ZnO:Tb,Eu sub-layers with varying thicknesses were tested in electroluminescence to obtain white light emitting diodes. Rare earth excitation mechanisms are discussed.
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  • HAL Id : tel-02499705, version 1

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Clément Guillaume. Croissance, photoluminescence et électroluminescence de films de ZnO dopé terres rares. Physique [physics]. Normandie Université, 2019. Français. ⟨NNT : 2019NORMC243⟩. ⟨tel-02499705⟩

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