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Spectroscopie optique des centres G dans le silicium : des ensembles au centre unique

Abstract : Silicon is the most used semiconducteur in the micro-electronic industrises since the 60’s. However the ability for the silicon to emit light is limited, because of its indirect band-gap. In this respect, the G-center is one of the most promizing. We performed optical spectroscopy to characterize the G-center potoluminescence properties. The latter is created from proton irradiation of carbon-enriched silicon sample. The main results are the following : We addressed the carrier dynamics which occuring at a 6 ns time scale. We revealed the metastable state liftetime of the G-center which is 6 us. And finally we isolated a single center that emit single photons.
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Walid Redjem. Spectroscopie optique des centres G dans le silicium : des ensembles au centre unique. Physique [physics]. Université Montpellier, 2019. Français. ⟨NNT : 2019MONTS081⟩. ⟨tel-02491663⟩

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