Skip to Main content Skip to Navigation
Theses

Mesure par OCVD de la durée de vie des porteurs minoritaires dans des jonctions en GaSb, en GaAs et en Si : simulations et expérimentations

Abstract : Minority carrier lifetime measurement is essential to optimize PV solar cells. The OCVD method allows it into p-n junction. Compare to other technics widely used like PCD or TRPL, it is really simple and cheap. However it has been scarcely used for III-V materials mainly due to their low lifetime (<1μs). We focus on III-V semiconductors because they are good candidates to multijunction solar cells dedicated to CPV. Nevertheless, the OCVD signal must be simulated in order to extract lifetime in these materials. Therefore, we first used TCAD simulation to study design influence (bulk thickness and emitter doping) of silicon and GaAs p-n junctions on OCVD signal. We examined lifetime extraction in a specific region: the bulk. In parallel, we characterized GaSb and GaAs diodes. Experimental I-V and OCVD curves of GaSb p-n junctions have been fitted by TCAD simulation. It allowed to highlight the blocking diode is of major importance. Its blocking time has to be shorter than measured lifetime. Finally, we developed a model under Python based on transient single-diode model. It enables first to simulate OCVD signal, then to fit experimental curve with several fitting variables (τOCVD, Nl et Rsh). This modelling allowed to study further the variable influences on the signal and thus improved our knowledge on OCVD behaviour.
Document type :
Theses
Complete list of metadatas

Cited literature [176 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-02490750
Contributor : Abes Star :  Contact
Submitted on : Tuesday, February 25, 2020 - 2:39:09 PM
Last modification on : Wednesday, February 26, 2020 - 2:03:07 AM
Long-term archiving on: : Tuesday, May 26, 2020 - 4:28:58 PM

File

these_lemaire_antoine_2019.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-02490750, version 1

Collections

Citation

Antoine Lemaire. Mesure par OCVD de la durée de vie des porteurs minoritaires dans des jonctions en GaSb, en GaAs et en Si : simulations et expérimentations. Matériaux. Université de Perpignan, 2019. Français. ⟨NNT : 2019PERP0031⟩. ⟨tel-02490750⟩

Share

Metrics

Record views

102

Files downloads

51