R. X. Cringley, Breaking moore's law. techreport, 2013.

F. Adamu-lema, The scaling of MOSFETs, Moore's law, and ITRS

*. Email, , 2017.

H. Yu, V. L. Rideout, E. Bassous, R. H. Dennard, F. H. Gaensslen et al., Design of ion-implanted mosfet's with very small physical dimensions, IEEE Solid State Circuits, vol.9, issue.5, p.256, 1974.

B. Francis, Nouveaux Matériaux et Dispositifs pour la Nanoélectronique, IMEP-LAHC

D. Toru-kaga, E. Hisamoto, and . Takeda, Impact of the vertical so1 delta structure on planar device technology, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.38, issue.6, p.14191424, 1991.

X. Huang, W. Lee, C. Kuo, D. Hisamoto, L. Chang et al., Sub-50 nm p-channel nfet, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.48, issue.5, p.880886, 2001.

. Intel, Intel-standards-22nm-3d-tri-gate-transistors-presentation. techreport, Intel, 2011.

S. Prucnal, Fundamentals of Nanoelectronics: Basic Concepts. Helmholtz Association, 20014-11.

P. Flatresse, P. Magarshack, and G. Cesana, Utbb fd-soi: A process/de-sign symbiosis for breakthrough energy-eciency, Design , Automation & Test in Europe Conference & Exhibition, p.952957, 2003.

G. Cesana, Technology for very high-speed and energy ecient socs, FDSOI Forum, 2014.

B. Cui, Microfabrication and thin lm technology

J. D. Condential,

P. Eyben, Analysis and optimization of new implantation and activation mechanisms in ultra-shallow junction implants using scanning spreading resistance microscopy (SSRM), Materials Reseach Society, vol.912, 2006.

. Mody, 3D-Carrier proling in nFETs using Scanning Spreading Resistance Microscopy, 2011.

D. James and M. Current, Analytical Techniques for Ion Implantation, Siliconics, p.148

C. Scientic, S. Jose, and C. A. Usa,

D. Blavette and S. Duguay, Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography, Journal of Applied Physics, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01928847

A. Kumar-kambh, A. Kumar, A. Florakis, and W. Vandervorst, Threedimensional doping and diusion in nano scaled devices as studied by atom probe tomography, Nanotechnology, vol.24, p.17, 2013.

A. A. Budrevicha and W. Vandervorst, SIMS Analysis on the Transistor Scale: Probing Composition and Dopants in Nonplanar, Conned 3D Volumes

S. Qin, Challenges of 2-d (3-d) device doping process and doping proling metrology, International Workshop on Junction Technology, p.9197, 2016.

D. Jalabert, I. Vickridge, and A. Chabli, Swift Ion Beam Analysis in Nanosciences, 2017.

W. Brett and . Bush, Metal and Alloy Surface Structure Studies Using Medium-energy Ion Scattering. PhD thesis, Rutgers, The State Uiversity of New Jersey, 2000.

J. F. Ziegler and H. H. Andersen, Hydrogen Stopping Powers and Ranges in All Elements, vol.3, 1977.

J. F. Ziegler, Helium Stopping Powers and Ranges in All Elements, 1977.

W. Chu, Calculation of energy straggling for proton and helium ions, Phys. Rev. A, vol.13, issue.0, p.20542060, 1976.

J. F. Ziegler,

D. R. Rueda and M. Garcia-gutiérrez, Bases of Synchrotron Radiation and Light Sources, chapter 1: Bases of Synchrotron Radiation, Light Sources, and Features of X-Ray Scattering Beamlines, vol.776, p.122, 2009.

, What is a synchrotron? Synchrotron science, The European Synchrotron

B. David, C. Willaims, and . Carter, Transmission Electon Microscopy. A text book for maerial sciences, 2009.

M. A. Sortica, P. L. Grande, G. Machado, and L. Miotti, Characterization of nanoparticles through medium-energy ion scattering, J. Appl. Phys, vol.106, p.17, 2009.

, UFRGS. Powermeis simulation software

G. E. Moore, Cramming more components onto integrated circuits, Electronics, vol.38, issue.8, 1965.

H. Moriceau, F. F. Fournel-cea, L. France, F. Rieu-tord, and C. , Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology, vol.3, 2014.

, Smart cut: a promising new soi material technology, 95CH35763, 1995.

M. Nakano, T. Abe, and T. Ito, Silicon-On-Insulator Technology and Devices. Number 61. Pennington, 1990.

E. Eurosoi+, . Information, and . Communication-technolo-gies, Monthly Publication of Electronic Newsletter Collecting the Main Advances of SOI Technology, pp.7-216373, 2011.

C. Claude, Implantation ionique. Service traitement de surface

T. Sakamoto, H. Kawaura, and T. Baba, Observation of source-to-drain di--eect transistors, Applied Physics Letter, vol.76, issue.25, p.38103812, 2000.

P. Packan, S. Thompson, and M. Bohr, Mos scaling: Transistor challenges for the 21st century, Intel Tech. J, vol.3, p.119, 1998.

A. Harb, N. Deltimple, A. Mohsen, and A. Serhane, 28-nm utbb fd-soi vs. 22-nm tri-gate nfet review: A designer guide -part i, Circuits and Systems, vol.8, p.93110, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01717702

, High immunity to threshold voltage variability in undoped ultra-thin fdsoi mosfets and its physical understanding

A. Asenov and . Vlsi, , p.86, 2007.

A. , , p.609, 2008.

A. Vandooren, , p.975, 2003.

D. G. Armour, W. Vandervorst, E. H. Collart, R. D. Goldberg, P. Bailey et al., Damage accumulation and dopant migration during shallow as and sb implantation into si, Nuclear Instruments and Methods in Physics Research B, vol.216, p.6474, 2004.

J. A. Van-den, D. G. Berg, S. Armour, S. Zhang, H. Whelan et al., Characterization by medium energy ion scattering of damage and dopant proles produced by ultrashallow b & as. into si at dierent temperatures, J. Vac. Sci. Technol. B, vol.20, issue.3, 2002.

C. Paul, K. Chu, N. W. Cheung, R. Othon, . Monteiro et al., , pp.99-89627, 2000.

P. Boulenc, C. Tavernier, F. Olivié, Z. Essa, and F. Cristiano, Modélisation tcad des prols et fuites de jonctions ultra-minces dans les technologies cmos avancées

P. Pichler, Intrinsic Point Defects, Impurities, and their diusion in Silicon

. Springer-wien, , 2004.

M. Werner, Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering, 2006.

M. Scharff(t, ). J. Lindhard, and H. E. Schiøtt, Range concepts and heavy ions ranges. Matematisk-fysiske Meddelelser, NOTES ON ATOMIC COLLISIONS, vol.33, issue.14, p.140, 1963.

P. Eyben, W. Vandervorst, D. Alvarez, A. M. Fouchier-m, and . Xu, Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy, p.3187

W. Vandervorst and M. Meuris, , vol.29, 1994.

W. Vandervorst and M. Meuris, , vol.15, 1992.

K. Grella, Assessment of spreading resistance measurements by local probe microscopy. mathesis, Grenble INP, 2008.

M. Pawlik, Journal of Vac. Science and Technology, vol.10, issue.1, p.388396, 1992.

R. G. Mazur, Journal of the Electrochemical Society, vol.113, issue.3, p.255259, 1966.

R. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry, 1989.

P. Bailey, T. C. Noakes, C. J. Baddeley, S. P. Tear, and D. P. Woodru, Monolayer resolution in medium energy ion scattering, Nuclear Instruments and Methods in Physics B, vol.183, p.6272, 2001.

D. Jalabert, Analyse de nanostructures semi-conductrices par faisceau d'ions

U. Hdr, . Grenoble, and . Joseph-fourier, , 2012.

A. Garro, A. Cros, D. García-cristóbal, J. Jalabert, and . Coraux, Deformation prole in gan quantum dots: Medium-energy ion scattering experiments and theoretical calculations, PHYSICAL REVIEW B, 2005.

N. Angert, Ion sources. IAEA Collection

. Hamamatsu, . Mcp-assembly, H. Hama-matsu-photonics, and . K. Photonics-k, Electron Tube Division, 314-5, shimokanzo, Iwata City, Shizuoka Pref, pp.438-0193, 2016.

-. Marc, J. W. Chu, and . Mayer, Basckattering spectrometry. Harcourt Barce Jovanovich, Publishers, 1978.

S. Thomas-picraux-leonard, C. Feldman, and J. W. Mayer, Materials analysis by ion channeling submicron crystallography. Hartcourt Brace Jovanovich, 1982.

, N. Bohr. Mat. Fys. Medd Dan. Vid. Selsk, vol.18, issue.8, 1948.

K. Dan, Vidensk. Selsk. Lindhard, J. Mat.-Fys. Medd, vol.34, issue.14, 1965.

, Dokl. Akad. Nauk SSSR Tulinov, A. F. Sov. Phys.-Dockl, vol.10, issue.463, 1965.

D. S. Gemmell and R. E. Holland, Phys. Rev. Lett, vol.14, issue.945, 1965.

D. S. Gemmell, Channeling and related eects in the riiotion of charged particles through crystals, Rev. Mod. Phys, vol.46, issue.1, 1974.

M. Dalponte, L. Boudinov, E. Goncharova, T. Garfunkel, and . Gustafsson, Meis study of antimony implantation in simox and vacancy-rich si(100), Journal of Physics D: Applied Physics, vol.40, issue.14, p.4222, 2007.

P. C. Zalm, P. Bailey, M. A. Reading, A. K. Rossall, J. A. Van-den et al., Quantitative considerations in medium energy ion scattering depth proling analysis of nanolayers, Nuclear Instruments and Methods in Physics Research B, issue.387, p.85, 2016.

D. F. Sanchez-agenor-hentz-mauricio-de, A. Sortica, P. L. Grande, and G. Marmitt, PowerMEIS 2.0 User's Manual

I. Sul and . De-fisica, Laboratorio de Implantaçao Iônica, 2013.

D. F. Sanchez-mauricio-de, A. Sortica, and P. L. Grande, PowerMEIS 2.0 User's Manual, 2010.

S. Leszek, . Wielunski, G. L. Szilagyi, and . Harding, Multiple scattering effects in depth resolution of elastic recoil detection. The work was partially supported by Hungarian OTKA grant No, 19165.

D. L. Cristiane-marin, M. Batista-gustavo-de, L. Azevedo-pedro, and . Grande-dario,

F. Sanchez, G. Marmitt, and P. F. Fichtner, New approach for structural characterization of planar sets of nanoparticles embeded into a solid matrix, Sci. Rep, vol.3, issue.3414, 2013.

P. Sigmund, Sputtering by particle bombardment I, vol.47, pp.1437-0859, 1981.

D. Marc-aucouturier-evelyne and P. Lehuédé,

, Spectrométrie de masse d'ions secondaires : Sims et tof-sims -principes et appareillages, 2014.

D. Marc-aucouturier-evelyne and P. Lehuédé,

, Spectrométrie de masse d'ions secondaires : Sims et tof-sims procédures d'analyse et performances. Technque de l'ingénieure, p.2619, 2015.

T. Grehl, Improvements in TOF-SIMS Instrumentation for Analytical Application and Fundamental Research, 2003.

H. Satoh, Relative sensitivity factors for submicron secondary ion mass spectrometry with gallium primary ion beam, J. Appl. Phys, vol.32, issue.8, p.36163620, 1993.

. Friedrichw, P. Knipping, V. Laue, and M. Sitzumgsber, Math. Naturwiss., Munchen, p.303322, 1912.

S. Takagi, Dynamical theory of diraction applicable to crystalss with any kind of small distortion, Act crystallaogr, vol.15, issue.12, p.13111312, 1962.

M. Emrich and D. Opper, XRD fot the analyst Getting acquainted with the principles. PANanalytical B.V., Lelyweg 1, 7602 EA Almelo, P.O. Box, vol.13, 2013.

S. Baudot, Strained MOSFETs on SOI : strain analysis by X-ray diraction and electrical properties study. Theses, 2010.

, Press room, The European Radiation Synchrotron ESRF, Esrf in breaf and key gures

M. Mayer, SIMNRA User's Guide. Max-Planck-Institut für Plasmaphysik

S. Qin, J. D. Bernstein, Z. Zhao, W. Liu, and C. Chan, Charging eects in plasma immersion ion implantation for microelectronics, J. Vac. Sci. Technol. B, vol.5, issue.13, 1995.

Q. Shen and S. Kycia, Determination of interfacial strain distribution in quantum-wire structures by synchrotron x-ray scattering, Physical Review B, vol.55, issue.23, p.1579197, 1997.

B. , W. Q. Shen, C. C. Umbach, and J. M. Blakely, X-ray diraction from a coherently illuminated si(001) grating surface, Physical Review B, vol.48, issue.24, p.1796773, 1993.

T. Baumbach and D. Lübbert, Grazing incidence diraction by laterally patterned semiconductor nanostructures, J. Appl. Phys. D, vol.32, p.726740, 1999.

F. Torregrosa, Y. Spiegel, J. Duchaine, T. Michel, G. Borvon et al., Recent developments on pulsion R piii tool: Finfet 3d doping, high temp implantation, iii-v doping, contact and silicide improvement, amp; 450 mm, 15th International Workshop on Junction Technology (IWJT), p.15, 2015.

F. Ray, ;. Egerton, S. , A. Springer, and F. Ray, Physical Principles of Electron Microscopy: An Introduction to TEM, 2005.

. Hashimoto, Journal of the Physical Society of Japan, 1977.

, Microscopie électronique en transmission : MET (ou TEM). Phelma, Geenoble INP, 2016.