Breaking moore's law. techreport, 2013. ,
The scaling of MOSFETs, Moore's law, and ITRS ,
, , 2017.
Design of ion-implanted mosfet's with very small physical dimensions, IEEE Solid State Circuits, vol.9, issue.5, p.256, 1974. ,
Nouveaux Matériaux et Dispositifs pour la Nanoélectronique, IMEP-LAHC ,
Impact of the vertical so1 delta structure on planar device technology, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.38, issue.6, p.14191424, 1991. ,
Sub-50 nm p-channel nfet, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.48, issue.5, p.880886, 2001. ,
Intel-standards-22nm-3d-tri-gate-transistors-presentation. techreport, Intel, 2011. ,
Fundamentals of Nanoelectronics: Basic Concepts. Helmholtz Association, 20014-11. ,
Utbb fd-soi: A process/de-sign symbiosis for breakthrough energy-eciency, Design , Automation & Test in Europe Conference & Exhibition, p.952957, 2003. ,
Technology for very high-speed and energy ecient socs, FDSOI Forum, 2014. ,
Microfabrication and thin lm technology ,
,
Analysis and optimization of new implantation and activation mechanisms in ultra-shallow junction implants using scanning spreading resistance microscopy (SSRM), Materials Reseach Society, vol.912, 2006. ,
3D-Carrier proling in nFETs using Scanning Spreading Resistance Microscopy, 2011. ,
Analytical Techniques for Ion Implantation, Siliconics, p.148 ,
,
Investigation of dopant clustering and segregation to defects in semiconductors using atom probe tomography, Journal of Applied Physics, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01928847
Threedimensional doping and diusion in nano scaled devices as studied by atom probe tomography, Nanotechnology, vol.24, p.17, 2013. ,
, SIMS Analysis on the Transistor Scale: Probing Composition and Dopants in Nonplanar, Conned 3D Volumes
Challenges of 2-d (3-d) device doping process and doping proling metrology, International Workshop on Junction Technology, p.9197, 2016. ,
Swift Ion Beam Analysis in Nanosciences, 2017. ,
Metal and Alloy Surface Structure Studies Using Medium-energy Ion Scattering. PhD thesis, Rutgers, The State Uiversity of New Jersey, 2000. ,
Hydrogen Stopping Powers and Ranges in All Elements, vol.3, 1977. ,
Helium Stopping Powers and Ranges in All Elements, 1977. ,
Calculation of energy straggling for proton and helium ions, Phys. Rev. A, vol.13, issue.0, p.20542060, 1976. ,
,
Bases of Synchrotron Radiation and Light Sources, chapter 1: Bases of Synchrotron Radiation, Light Sources, and Features of X-Ray Scattering Beamlines, vol.776, p.122, 2009. ,
, What is a synchrotron? Synchrotron science, The European Synchrotron
Transmission Electon Microscopy. A text book for maerial sciences, 2009. ,
Characterization of nanoparticles through medium-energy ion scattering, J. Appl. Phys, vol.106, p.17, 2009. ,
, UFRGS. Powermeis simulation software
Cramming more components onto integrated circuits, Electronics, vol.38, issue.8, 1965. ,
Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology, vol.3, 2014. ,
, Smart cut: a promising new soi material technology, 95CH35763, 1995.
, Silicon-On-Insulator Technology and Devices. Number 61. Pennington, 1990.
, Monthly Publication of Electronic Newsletter Collecting the Main Advances of SOI Technology, pp.7-216373, 2011.
Implantation ionique. Service traitement de surface ,
Observation of source-to-drain di--eect transistors, Applied Physics Letter, vol.76, issue.25, p.38103812, 2000. ,
Mos scaling: Transistor challenges for the 21st century, Intel Tech. J, vol.3, p.119, 1998. ,
28-nm utbb fd-soi vs. 22-nm tri-gate nfet review: A designer guide -part i, Circuits and Systems, vol.8, p.93110, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01717702
, High immunity to threshold voltage variability in undoped ultra-thin fdsoi mosfets and its physical understanding
, , p.86, 2007.
, , p.609, 2008.
, , p.975, 2003.
Damage accumulation and dopant migration during shallow as and sb implantation into si, Nuclear Instruments and Methods in Physics Research B, vol.216, p.6474, 2004. ,
Characterization by medium energy ion scattering of damage and dopant proles produced by ultrashallow b & as. into si at dierent temperatures, J. Vac. Sci. Technol. B, vol.20, issue.3, 2002. ,
, , pp.99-89627, 2000.
, Modélisation tcad des prols et fuites de jonctions ultra-minces dans les technologies cmos avancées
Intrinsic Point Defects, Impurities, and their diusion in Silicon ,
, , 2004.
Damage formation and annealing studies of low energy ion implants in silicon using medium energy ion scattering, 2006. ,
Range concepts and heavy ions ranges. Matematisk-fysiske Meddelelser, NOTES ON ATOMIC COLLISIONS, vol.33, issue.14, p.140, 1963. ,
Probing Semiconductor Technology and Devices with Scanning Spreading Resistance Microscopy, p.3187 ,
, , vol.29, 1994.
, , vol.15, 1992.
Assessment of spreading resistance measurements by local probe microscopy. mathesis, Grenble INP, 2008. ,
, Journal of Vac. Science and Technology, vol.10, issue.1, p.388396, 1992.
, Journal of the Electrochemical Society, vol.113, issue.3, p.255259, 1966.
, Secondary Ion Mass Spectrometry, 1989.
Monolayer resolution in medium energy ion scattering, Nuclear Instruments and Methods in Physics B, vol.183, p.6272, 2001. ,
Analyse de nanostructures semi-conductrices par faisceau d'ions ,
, , 2012.
Deformation prole in gan quantum dots: Medium-energy ion scattering experiments and theoretical calculations, PHYSICAL REVIEW B, 2005. ,
Ion sources. IAEA Collection ,
Electron Tube Division, 314-5, shimokanzo, Iwata City, Shizuoka Pref, pp.438-0193, 2016. ,
Basckattering spectrometry. Harcourt Barce Jovanovich, Publishers, 1978. ,
Materials analysis by ion channeling submicron crystallography. Hartcourt Brace Jovanovich, 1982. ,
, N. Bohr. Mat. Fys. Medd Dan. Vid. Selsk, vol.18, issue.8, 1948.
, Vidensk. Selsk. Lindhard, J. Mat.-Fys. Medd, vol.34, issue.14, 1965.
, Dokl. Akad. Nauk SSSR Tulinov, A. F. Sov. Phys.-Dockl, vol.10, issue.463, 1965.
, Phys. Rev. Lett, vol.14, issue.945, 1965.
Channeling and related eects in the riiotion of charged particles through crystals, Rev. Mod. Phys, vol.46, issue.1, 1974. ,
Meis study of antimony implantation in simox and vacancy-rich si(100), Journal of Physics D: Applied Physics, vol.40, issue.14, p.4222, 2007. ,
Quantitative considerations in medium energy ion scattering depth proling analysis of nanolayers, Nuclear Instruments and Methods in Physics Research B, issue.387, p.85, 2016. ,
PowerMEIS 2.0 User's Manual ,
, Laboratorio de Implantaçao Iônica, 2013.
PowerMEIS 2.0 User's Manual, 2010. ,
Multiple scattering effects in depth resolution of elastic recoil detection. The work was partially supported by Hungarian OTKA grant No, 19165. ,
,
New approach for structural characterization of planar sets of nanoparticles embeded into a solid matrix, Sci. Rep, vol.3, issue.3414, 2013. ,
Sputtering by particle bombardment I, vol.47, pp.1437-0859, 1981. ,
,
, Spectrométrie de masse d'ions secondaires : Sims et tof-sims -principes et appareillages, 2014.
,
, Spectrométrie de masse d'ions secondaires : Sims et tof-sims procédures d'analyse et performances. Technque de l'ingénieure, p.2619, 2015.
Improvements in TOF-SIMS Instrumentation for Analytical Application and Fundamental Research, 2003. ,
Relative sensitivity factors for submicron secondary ion mass spectrometry with gallium primary ion beam, J. Appl. Phys, vol.32, issue.8, p.36163620, 1993. ,
, Math. Naturwiss., Munchen, p.303322, 1912.
Dynamical theory of diraction applicable to crystalss with any kind of small distortion, Act crystallaogr, vol.15, issue.12, p.13111312, 1962. ,
XRD fot the analyst Getting acquainted with the principles. PANanalytical B.V., Lelyweg 1, 7602 EA Almelo, P.O. Box, vol.13, 2013. ,
Strained MOSFETs on SOI : strain analysis by X-ray diraction and electrical properties study. Theses, 2010. ,
, Press room, The European Radiation Synchrotron ESRF, Esrf in breaf and key gures
SIMNRA User's Guide. Max-Planck-Institut für Plasmaphysik ,
Charging eects in plasma immersion ion implantation for microelectronics, J. Vac. Sci. Technol. B, vol.5, issue.13, 1995. ,
Determination of interfacial strain distribution in quantum-wire structures by synchrotron x-ray scattering, Physical Review B, vol.55, issue.23, p.1579197, 1997. ,
X-ray diraction from a coherently illuminated si(001) grating surface, Physical Review B, vol.48, issue.24, p.1796773, 1993. ,
Grazing incidence diraction by laterally patterned semiconductor nanostructures, J. Appl. Phys. D, vol.32, p.726740, 1999. ,
Recent developments on pulsion R piii tool: Finfet 3d doping, high temp implantation, iii-v doping, contact and silicide improvement, amp; 450 mm, 15th International Workshop on Junction Technology (IWJT), p.15, 2015. ,
, Physical Principles of Electron Microscopy: An Introduction to TEM, 2005.
, Journal of the Physical Society of Japan, 1977.
, Microscopie électronique en transmission : MET (ou TEM). Phelma, Geenoble INP, 2016.