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, Le vieillissement par courts-circuits d'une puce de puissance entraine une restructuration de la métallisation de la face avant de la puce, qui se traduit par une augmentation de sa résistance

, Keysight B1505a) permet de mesurer les paramètres électriques du composant. Les essais peuvent être automatisées en connectant directement l'analyseur et le banc de vieillissement au DUT -à condition que l'instrument soit protégé lors des tests en courts-circuits et que le banc de

, Cette section propose une autre méthode d'automatisation des tests : le banc de vieillissement lui-même est utilisé pour mesurer la résistance à l

, sur un MOSFET, la tension de bus est fixée à une valeur « élevée » ? (pouvant atteindre au moins quelques centaines de volts, suivant les spécifications du composant et le niveau de stress requis) et le courant est principalement déterminé par les caractéristiques en saturation du composant. Si la tension de test était réduite à une plus faible tension , de l'ordre de quelques centaines de millivolts, le DUT fonctionnerait en mode linéaire et le courant serait principalement déterminé

, La tension de bus est tout d'abord montée jusqu'à une valeur ? , puis des tests de vieillissement en court-circuit sont menés. La tension de bus est ensuite abaissée à la valeur . Un test en courtcircuit sous très basse tension, et donc sous un courant relativement faible, est alors réalisé, au cours duquel courant et tension de tests sont mesurés pour calculer la résistance du composant. La tension de bus est alors montée à nouveau et le cycle reprend. Le temps requis pour faire passer la tension de bus de ? à , déterminé par la décharge du banc de condensateurs dans une résistance de protection, permet au DUT de refroidir jusqu'à une température proche de l'ambiant. Les tests permettant de mesurer la résistance, menés sous un courant proche de 10 A dans ces travaux, Un test de vieillissement par court-circuit avec mesure automatisée de l'évolution de la résistance du DUT est alors mené comme suit

, une mesure de résistance est réalisée à l'aide du shunt de puissance utilisé pour mesurer le courant lors des tests de vieillissement. Son gain de 10,27 mV/A, bien que relativement faible, permet une mesure relativement exacte du courant de test. Par ailleurs, la structure du banc De nombreux travaux de recherche se sont intéressés à ces problématiques. Les estimateurs publiés peuvent ainsi être basés sur des modèles linéaires

, Bien que la première approche soit a priori plus rapide, elle est généralement limitée à quelques milliers de noeuds (et souvent bien moins), d'où une pertinence limitée. À l'opposé, les simulations FEM 3D peuvent présenter un coût et une exactitude fortement supérieurs

, Si certains articles proposent des simulations thermoélectriques couplant modèles thermiques

, Cette annexe traite de quelques-unes des hypothèses les plus communément mises en avant dans la littérature portant sur la simulation thermique de MOSFET SiC en régime de court-circuit -même si la méthode et certains résultats peuvent être extrapolés à des technologies et à des tests différents. L'étude est menée dans le cadre de l'enfouissement PCB avec reprise de contact par mousse pressée

, les résultats sont néanmoins très généralement applicables au cas de composants discrets et de modules de puissance standards

, Un état de l'art comparatif succinct de modèles thermiques publiés est proposé en section 11.2 tandis que le modèle développé dans cette étude est détaillé en section 11.3. Des résultats de simulations sont donnés en section 11.4, l'influence de divers paramètres de simulation est discutée en section 11.5 11.2 ÉTAT DE L'ART De nombreux travaux portant sur la simulation du champ de température au sein d'un MOSFET SiC pendant un court-circuit ont pu être publiés

, Table A1 : détails des hypothèses formulées par quelques publications -cf. texte. Réf

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