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Films de diamant hétéroépitaxiés sur Ir/SrTiO₃/Si (001) : une voie vers des substrats de plus grande taille

Julien Delchevalrie 1
1 LCD-LIST - Laboratoire Capteurs Diamant
DM2I - Département Métrologie Instrumentation & Information : DRT/LIST/DM2I
Abstract : Single crystal diamond is a promising candidate for power electronics applications and heteroepitaxy is a credible alternative for the synthesis of this material. During this PhD, each step from the synthesis of heteroepitaxial diamond films on Ir/SrTiO₃/Si(001) pseudo-substrates was studied in details to progress in the reproducibility and the crystalline quality of films. Thus, a laser reflectometry system was installed on the iridium epitaxy reactor to characterize in situ the thickness of these films. A new approach based on plasma treatment leading to the iridium recrystallization at temperatures between 800°C and 900°C was developed and patented. Then, a characterization of the iridium surface after diamond nucleation (BEN) by spectroscopic ellipsometry was done by building an ellipsometric model based on a sequential study by SEM, AFM and XPS. Results demonstrate that ellipsometry is sensitive to the formation of domains including epitaxial diamond crystals. The nucleation step was extented to Ir/SrTiO₃/Si(001) pseudo-substrates with a size of 10x10 mm². A strategy for the thickening of diamond films based on two steps was adopted. The crystalline structure of films, few hundreds of microns thick, was characterized by XRD and Raman. Lateral Schottky diodes were built on one of the thick substrates. Electrical measurements demonstrate the homogeneity of the heteroepitaxial diamond substrate. To better control the growth early stages, a new method of selective nucleation was developed and patented. Its application in the future would make possible a lateral growth (ELO) from the coalescence of the first diamond crystals.
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Submitted on : Monday, December 9, 2019 - 1:05:09 PM
Last modification on : Saturday, May 1, 2021 - 3:50:02 AM
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  • HAL Id : tel-02400036, version 1


Julien Delchevalrie. Films de diamant hétéroépitaxiés sur Ir/SrTiO₃/Si (001) : une voie vers des substrats de plus grande taille. Chimie-Physique [physics.chem-ph]. Université Paris Saclay (COmUE), 2019. Français. ⟨NNT : 2019SACLS383⟩. ⟨tel-02400036⟩



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