, , 2017.
, GaSbBi/GaSb quantum well laser diodes, Applied Physics Letters, vol.110, issue.22, p.222106
In situ determination of the growth conditions of GaSbBi alloys, Journal of Crystal Growth, vol.495, pp.9-13, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02080206
Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness, Semiconductor Science and Technology, vol.33, issue.9, p.8, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02080292
Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications, Applied Physics Letters, vol.112, issue.15, p.5, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01770179
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of band gap alignment, Journal of applied physics, vol.125, 2019. ,
Molecularbeam epitaxy of GaInSbBi alloys, Submitted to Journal of applied Physics ,
URL : https://hal.archives-ouvertes.fr/hal-02326087
,
Optical properties and dynamics of excitons in Ga(Sb,Bi)/GaSb quantum wells: evidence for a regular alloy behavior ,
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys, Journal of Crystal Growth, vol.477, pp.144-148, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-02327261
Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys, 19th International Conference on Molecular-Beam Epitaxy (MBE2016), pp.4-9, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-02327261
Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys, Oral: 13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), pp.18-22, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-02327261
GaSbBi/GaSb quantum well laser diodes, 8th International Workshop on Bismuth-Containing Semiconductors, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01626914
High Bi-content GaSbBi alloys for mid-IR applications, pp.14-18, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01905735
, GaSbBi alloys for mid-infrared optoelectronics Freiburg Infrared Colloqium, 2017.
Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications, p.8 ,
URL : https://hal.archives-ouvertes.fr/hal-01905702
, International Workshop on Bismuth-Containing Semiconductors, 2017.
,
, GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure" Conference on Midinfrared Optoelectronics: Materials and Devices (MIOMD), Paper MIOMD-TuM11, 2018.
Study of In incorporation into GaSbBi alloys, 20 th European Workshop on Molecular Beam Epitaxy, pp.17-20, 2019. ,
URL : https://hal.archives-ouvertes.fr/hal-02327229
Molecular-beam epitaxy of GaInSbBi alloys and QWs, 10 th International Workshop on Bismuth-Containing Semiconductors, 2019. ,
URL : https://hal.archives-ouvertes.fr/hal-02327216
Transmission Electron Microscopy of, 10 th International Workshop on Bismuth-Containing Semiconductors, 2019. ,
URL : https://hal.archives-ouvertes.fr/hal-01905702
Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes, 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02078153
Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells, 20 th International Conference on Molecular-Beam Epitaxy (MBE 2018), pp.2-8 ,
URL : https://hal.archives-ouvertes.fr/hal-02078204
Growth and characterization of high Bi content GaSbBi alloys" 19th Euro-MBE conference, 2017. ,
Ga(In)SbBi alloys for mid-IR applications: growth and characterization, 16 ème Journées Nano, Micro et Optoélectronique (JNMO 2018), pp.13-15 ,
URL : https://hal.archives-ouvertes.fr/hal-02327294
,
GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization, 34th International Conference on the Physics of Semiconductors, p.29 ,
URL : https://hal.archives-ouvertes.fr/hal-02327289
Progress of multicolor single detector to detector array development for remote sensing, Award Best poster award at the 16 ème Journées Nano, Micro et Optoélectronique (JNMO 2018, vol.5543, pp.239-247, 2004. ,
High temperature operation of far infrared (? ~ 20 ?m) InAs/AlSb quantum cascade lasers with dielectric waveguide, Optics Express, vol.23, issue.2, pp.1523-1528, 2015. ,
Temperature dependence of hole mobility in GaAs1?xBix alloys, Journal of Applied Physics, vol.108, issue.8, pp.686-687, 1956. ,
Composition determination in the GaAs/(Al, Ga) As system using contrast in dark-field transmission electron microscope images, Philosophical Magazine A, vol.60, issue.1, pp.39-62, 1989. ,
Tunable diode laser spectroscopy as a technique for combustion diagnostics, Spectrochimica Acta Part B-Atomic Spectroscopy, vol.106, pp.45-66, 2015. ,
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb, Journal of crystal growth, vol.220, issue.4, pp.384-392, 2000. ,
Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth, Electronics Letters, vol.50, issue.16, pp.1155-1156, 2014. ,
Migration-enhanced epitaxy of thin GaAsBi layers, Lithuanian Journal of Physics, vol.54, issue.2, 2014. ,
Apport des techniques d'épitaxie à la technologie du MOSFET ultime : Réalisation et étude d'hétérostructures IV-IV contraintes en tension sur Si(001, Optical and Quantum Electronics, vol.47, issue.4, pp.873-882, 2003. ,
Calculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors: Effects of p 1? 2 local orbitals and chemical trends, Physical Review B, vol.70, issue.3, p.35212, 2004. ,
Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si, Applied Physics Letters, vol.2, issue.6, p.101102, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01626979
Effects of point defects on lattice parameters of semiconductors, Physical Review B, vol.54, issue.12, p.8516, 1996. ,
Double-heterostructure diode lasers emitting at 3 ?m with a metastable GaInAsSb active layer and AlGaAsSb cladding layers, Applied physics letters, vol.64, pp.2474-2476, 1994. ,
Antimonide-based strained quantum-well diode lasers, Physica Scripta, issue.T69, p.17, 1997. ,
Seeing in the dark: Defense applications of IR imaging, Optics and Photonics News, vol.22, issue.4, pp.26-31, 2011. ,
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy, Infrared physics & technology, vol.55, issue.1, pp.156-160, 2012. ,
Crystal structure of InBi under pressure up to 75 GPa, Physical Review B, vol.57, issue.9, p.4975, 1998. ,
Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys, Journal of Crystal Growth, vol.477, pp.144-148, 2017. ,
GaSbBi/GaSb quantum well laser diodes, Applied Physics Letters, vol.110, issue.22, p.222106, 2017. ,
In situ determination of the growth conditions of GaSbBi alloys, Journal of Crystal Growth, vol.495, pp.9-13, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02080206
Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy, Journal of Crystal Growth, vol.6, issue.11, pp.5-11, 2013. ,
MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.31, issue.3, pp.3-105, 2013. ,
Structural and electronic properties of III-V bismuth compounds, Physical Review B, vol.73, issue.11, p.115107, 2006. ,
URL : https://hal.archives-ouvertes.fr/hal-00069764
Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys, Optical Materials, vol.42, pp.67-71, 2015. ,
Giant Spin-Orbit Bowing in GaAsBi, Physical Review Letters, vol.97, issue.6, p.67205, 2006. ,
Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1? yBiy, Journal of Crystal Growth, vol.395, pp.38-45, 2014. ,
Band gap of GaAs1-x Bix, 0<x<3.6%, Appl Phys Lett, vol.82, 2003. ,
Long-wavelength emission in photo-pumped GaAs1-xBix laser with low temperature dependence of lasing wavelength, Applied Physics Letters, vol.103, issue.20, p.4, 2013. ,
Electrically pumped roomtemperature operation of GaAs1-xBix laser diodes with low-temperature dependence of oscillation wavelength, Applied Physics Express, vol.7, issue.8, p.4, 2014. ,
2.7-?m InGaAsSb/AlGaAsSb laser diodes with continuous wave operation up to-39° c. IEEE Princeton Section Sarnoff Symposium, IEEE, Scientific World Journal, p.6, 1995. ,
Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range, Journal of Applied Physics, vol.119, issue.7, p.75701, 2016. ,
Determination of the Local Concentrations of Mn Interstitials and Antisite Defects in GaMnAs, Physical review letters, vol.93, issue.8, 2004. ,
,
Dynamic infrared imaging for skin cancer screening, Infrared Physics & Technology, vol.70, pp.147-152, 2015. ,
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy, Nanoscale research letters, vol.9, issue.1, p.24, 2014. ,
Infrared Imaging Tools for Diagnostic Applications in Dermatology, SM journal of clinical and medical imaging, vol.1, issue.1, pp.1-5, 2015. ,
Epitaxial phases of high Bi content GaSbBi alloys, Journal of Crystal Growth, vol.516, pp.67-71, 2019. ,
Type-I GaSb-Based Laser Diodes Operating in 3.1-to 3.3 µm Wavelength Range, Japanese journal of applied physics, vol.27, issue.2R, pp.718-720, 1988. ,
Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection, Applied Physics Letters, vol.53, issue.2, pp.142-144, 1988. ,
Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs, Physical Review B, vol.65, issue.11, p.115203, 2002. ,
Propriétés des alliages InSb1?xBix II. Absorption Optique, physica status solidi (b), vol.34, issue.1, pp.341-350, 1969. ,
, Propriétés des alliages InSb1?xBix I. Mesures électriques, physica status solidi (b), vol.34, issue.1, pp.329-340, 1969.
, Growth of InSb1-xBix single crystals by Czochralski method, Journal of Crystal Growth, vol.12, issue.2, pp.169-172, 1972.
Digital alloy growth in mixed As/Sb heterostructures, Journal of crystal growth, vol.251, issue.1-4, pp.515-520, 2003. ,
Growth parameters for thin film InBi grown by molecular beam epitaxy, Journal of electronic materials, vol.43, issue.4, pp.914-920, 2014. ,
Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing, Journal of Applied Physics, vol.123, issue.11, p.7, 2018. ,
High-power room-temperature continuous wave operation of 2.7 and 2.8 ?m In (Al) GaAsSb/GaSb diode lasers, Applied physics letters, vol.83, issue.10, pp.1926-1928, 2003. ,
Electron Hall mobility in GaAsBi, Journal of Applied Physics, vol.106, issue.4, p.43705, 2009. ,
Temperature dependence of the band gap of GaSb1? xBix alloys with 0< x? 0.042 determined by photoreflectance, Applied Physics Letters, vol.103, issue.26, p.261907, 2013. ,
Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys, Applied Physics Letters, vol.105, issue.11, p.112102, 2014. ,
Low-and high-energy photoluminescence from GaSb1? xBix with 0< x? 0.042, Applied Physics Express, vol.7, issue.11, p.111202, 2014. ,
Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study, Semiconductor Science and Technology, vol.30, issue.9, p.94005, 2015. ,
Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers, Journal of Applied Physics, vol.106, issue.2, p.113508, 2009. ,
, Sb 0.08 layers, Physical Review B, vol.88, issue.12, p.125201
Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment, Journal of Applied Physics, vol.125, 2019. ,
High temperature operation of short wavelength InAs-based quantum cascade lasers, Aip Advances, vol.2, issue.2, 2012. ,
URL : https://hal.archives-ouvertes.fr/hal-01620379
INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE, Physical Review B, vol.35, issue.17, pp.9174-9189, 1987. ,
Room-temperature 2.78 ?m AlGaAsSb/InGaAsSb quantum-well lasers, Applied physics letters, vol.66, issue.15, pp.1942-1944, 1995. ,
Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates, Applied physics letters, vol.71, issue.16, pp.2298-2300, 1997. ,
Room temperature operation of 8-12 ?m InSbBi infrared photodetectors on GaAs substrates, Applied physics letters, vol.73, issue.5, pp.602-604, 1998. ,
Thermal annealing effects on the optical and structural properties of (1 0 0) GaAs1? xBix layers grown by molecular beam epitaxy, Superlattices and Microstructures, vol.65, pp.48-55, 2014. ,
Molecular Beam Epitaxy Growth Technology and Properties of GaAsBi Alloys, Applied Physics Letters, vol.101, issue.8, p.82112, 2012. ,
Low threshold room-temperature continuous-wave operation of 2.24-3.04 ?m GaInAsSb/AlGaAsSb quantum-well lasers, Applied physics letters, vol.84, issue.25, pp.5088-5090, 2004. ,
Indium-incorporation enhancement of photoluminescence properties of Ga (In) SbBi alloys, Journal of Physics D: Applied Physics, vol.50, issue.37, p.375102, 2017. ,
Temperature dependence of band gaps in dilute bismides, Semiconductor Science and Technology, vol.33, issue.7, p.73001, 2018. ,
Electrically injected GaAsBi/GaAs single quantum well laser diodes, Physical review letters, vol.100, issue.23, p.8, 2008. ,
Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy, Journal of crystal growth, vol.304, issue.2, pp.402-406, 2007. ,
Temperature dependence of the dielectric function and the interband critical points of InSb, Applied Physics Letters, vol.31, issue.2, p.3, 1985. ,
Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces, Physical review letters, vol.109, issue.12, p.126101, 2012. ,
Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1? x Bi x/GaAs quantum wells, Nanotechnology, vol.27, issue.32, p.325603, 2016. ,
Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications, Applied Physics Letters, vol.112, issue.15, p.5, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-01770179
Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness, Semiconductor Science and Technology, vol.33, issue.9, p.8, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02080292
Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi, Applied Physics Letters, vol.55, issue.23, pp.2420-2422, 1989. ,
, Bismuth Surfactant-Mediated Epitaxy of Highly Doped InAs for Mid-Infrared Plasmonics. North American Molecular Beam Epitaxy Conf.(NAMBE), 2012.
Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing, Nanoscale research letters, vol.9, issue.1, p.123, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01723509
Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers, Semiconductor Science and Technology, vol.30, issue.9, p.10, 2015. ,
Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence, Semiconductor Science and Technology, vol.28, issue.2, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-02050522
Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi, Nanoscale research letters, vol.9, issue.1, p.19, 2014. ,
URL : https://hal.archives-ouvertes.fr/hal-01943032
Growth, phase analysis and mechanical properties of InSb1? xBix crystals, Materials chemistry and physics, vol.66, issue.1, pp.17-21, 2000. ,
Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy, Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy, vol.99, p.125034, 2008. ,
Quantum cascade lasers grown on silicon, Scientific Reports, vol.8, issue.8, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02078298
Indium antimonide-bismuth compositions grown by molecular beam epitaxy, Journal of Applied Physics, vol.53, issue.7, pp.4932-4937, 1982. ,
Detection of pedestrians in far-infrared automotive night vision using region-growing and clothing distortion compensation, Infrared Physics & Technology, vol.53, issue.6, pp.439-449, 2010. ,
InSb1-xBix Films Grown by Molecular Beam Epitaxy, Japanese Journal of Applied Physics, vol.20, issue.4, pp.303-306, 1981. ,
New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy, Japanese journal of applied physics, vol.37, issue.11A, p.1283, 1998. ,
Characteristics of semiconductor alloy GaAs1-xBix, Japanese Journal of Applied Physics, vol.41, issue.5R, p.2801, 2002. ,
Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy, Applied Physics Letters, vol.77, issue.2, pp.214-216, 2000. ,
, , 2017.
, GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substratetemperature technique, Nanotechnology, vol.28, issue.10, p.105702
Influence of bismuth incorporation on the valence and conduction band edges of Ga As 1? x Bi x, Applied Physics Letters, vol.92, issue.26, p.262105, 2008. ,
The temperature dependence of 1.3-and 1.5-/spl mu/m compressively strained InGaAs (P) MQW semiconductor lasers, IEEE Journal of selected topics in quantum electronics, vol.5, issue.3, pp.401-412, 1999. ,
First-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: chemical trends versus experimental data, Journal of Physics D: Applied Physics, vol.47, issue.35, p.94001, 2014. ,
Growth and properties of GaSbBi alloys, Applied Physics Letters, vol.103, issue.14, p.142106, 2013. ,
High Bi content GaSbBi alloys, Journal of applied physics, vol.116, issue.4, 2014. ,
Bi-induced band gap reduction in epitaxial InSbBi alloys, Applied Physics Letters, vol.105, issue.21, p.212101, 2014. ,
Bi fluxdependent MBE growth of GaSbBi alloys, Journal of Crystal Growth, vol.425, pp.241-244, 2015. ,
Cross-coupling reaction of organobismuth dialkoxides with aryl bromides and iodides catalyzed by Pd(PPh3)4, Journal of Organometallic Chemistry, vol.659, issue.1, pp.117-120, 2002. ,
Advances in mid-infrared detection and imaging: a key issues review, Reports on Progress in Physics, vol.77, issue.8, p.82401, 2014. ,
Continuouswave operation above room temperature of GaSb-based laser diodes grown on Si, Applied Physics Letters, vol.99, issue.12, p.3, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00641322
Multicomponent gas analysis using broadband quantum cascade laser spectroscopy, Optics Express, vol.22, issue.15, pp.18299-18309, 2014. ,
Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures, Nanoscale research letters, vol.9, issue.1, p.23, 2014. ,
Performance comparison of long-wavelength infrared type II superlattice devices with HgCdTe, Journal of electronic materials, vol.40, issue.8, pp.1815-1822, 2011. ,
Effect of annealing on the structural and optical properties of (3 1 1) B GaAsBi layers, Applied Surface Science, vol.256, issue.18, pp.5688-5690, 2010. ,
Predictive modeling of low solubility semiconductor alloys, Journal of Applied Physics, vol.120, issue.12, p.125310, 2016. ,
Calculation of Direct E 0 Energy Gaps for III-V-Bi Alloys Using Quantum Dielectric Theory, Physics of Semiconductor Devices, pp.779-781, 2014. ,
The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants, Journal of Crystal Growth, vol.104, issue.17, pp.8-11, 2014. ,
EXCITATION-POWER DEPENDENCE OF THE NEAR-BAND-EDGE PHOTOLUMINESCENCE OF SEMICONDUCTORS, Physical Review B, vol.45, issue.16, pp.8989-8994, 1992. ,
2 µm laser sources and their possible applications. Frontiers in Guided Wave Optics and Optoelectronics, IntechOpen, Chemical Society Reviews, vol.46, pp.5903-5924, 2010. ,
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.114, issue.16, pp.2-114, 2012. ,
Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi, Journal of Crystal Growth, vol.408, pp.71-77, 2014. ,
Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared, Journal of Applied Physics, vol.113, issue.4, 2013. ,
Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy, Japanese journal of applied physics, vol.119, issue.21, p.67, 2006. ,
The 640× 512 LWIR type-II superlattice detectors operating at 110 K, Infrared Physics & Technology, vol.89, pp.168-173, 2018. ,
Infrared sensors for ballistic missile defense, Infrared Physics & Technology, vol.42, issue.3-5, pp.333-336, 2001. ,
Growth and properties of the dilute bismide semiconductor GaAs1-xBix a complementary alloy to the dilute nitrides, International Journal of Nanotechnology, vol.5, issue.9, p.963, 2008. ,
Tunable mid-infrared laser absorption spectroscopy. Semiconductor Lasers. A. Baranov and E. Tournié, pp.579-629, 2013. ,
Surfactant enhanced growth of GaNAs and InGaNAs using bismuth, Journal of crystal growth, vol.251, issue.1-4, pp.449-454, 2003. ,
Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping, Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi, vol.82, p.42106, 2003. ,
Temperature dependence of the energy gap in semiconductors, Physica, vol.34, issue.1, pp.149-154, 1967. ,
High-performance mid-infrared GaSb laser diodes for defence and sensing applications, Laser Technology for Defense and Security X, International Society for Optics and Photonics, 2014. ,
Band parameters for III-V compound semiconductors and their alloys, Journal of Physics D: Applied Physics, vol.89, issue.11, pp.5815-5875, 2001. ,
Quartz-enhanced photoacoustic spectroscopy-based sensor system for sulfur dioxide detection using a CW DFB-QCL, Applied Physics B-Lasers and Optics, vol.117, issue.1, pp.113-120, 2014. ,
Characterization of secondary phases formed during MOVPE growth of InSbBi mixed crystals, Journal of crystal growth, vol.213, issue.1-2, pp.51-56, 2000. ,
Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 ?m, Applied Physics Letters, vol.7, issue.3, pp.3675-3677, 2002. ,
Near-and midinfrared laser monitoring of industrial processes, environment and security applications, Optics and Lasers in Engineering, vol.44, issue.7, pp.699-710, 2006. ,
Submillimeter and infrared astronomy: Recent scientific and technical developments, Infrared Physics & Technology, vol.35, issue.2-3, pp.551-567, 1994. ,
Magnesium-and calcium-doping behavior in molecular-beam epitaxial III-V compounds, Journal of Applied Physics, vol.27, issue.11, pp.4230-4235, 1982. ,
mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy, Acs Photonics, vol.4, issue.6, pp.1322-1326, 2017. ,
Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy, Japanese journal of applied physics, vol.42, issue.2R, p.371, 2003. ,
, Metastable GaAsBi alloy grown by molecular beam epitaxy, Japanese journal of applied physics, vol.42, issue.10B, p.1235
Quantitative estimation of density of Bi-induced localized states in GaAs1?xBix grown by molecular beam epitaxy, Journal of Crystal Growth, vol.378, pp.73-76, 2013. ,
Nitrogen-induced decrease of the electron effective mass in GaAs 1? x N x thin films measured by thermomagnetic transport phenomena, Applied physics letters, vol.82, issue.8, pp.1236-1238, 2003. ,
Bismuth surfactant growth of the dilute nitride GaNxAs1? x, Journal of crystal growth, vol.279, issue.3-4, pp.316-320, 2005. ,
Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films, Journal of Alloys and Compounds, vol.742, pp.780-789, 2018. ,
Structural and optical properties of GaSbBi/GaSb quantum wells, Optical Materials Express, vol.8, issue.4, pp.893-900, 2018. ,
Growth and phase stability of epitaxial metastable InSb1? x Bi x films on GaAs. I. Crystal growth, Journal of Applied Physics, vol.51, issue.3, pp.1549-1559, 1980. ,