O. Delorme, L. Cerutti, E. Luna, G. Narcy, A. Trampert et al., , 2017.

, GaSbBi/GaSb quantum well laser diodes, Applied Physics Letters, vol.110, issue.22, p.222106

O. Delorme, L. Cerutti, E. Tournié, and J. B. Rodriguez, In situ determination of the growth conditions of GaSbBi alloys, Journal of Crystal Growth, vol.495, pp.9-13, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02080206

E. Luna, O. Delorme, L. Cerutti, E. Tournie, J. B. Rodriguez et al., Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness, Semiconductor Science and Technology, vol.33, issue.9, p.8, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02080292

E. Luna, O. Delorme, L. Cerutti, E. Tournie, J. B. Rodriguez et al., Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications, Applied Physics Letters, vol.112, issue.15, p.5, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01770179

R. Kudrawiec, J. Kopaczek, O. Delorme, M. Polak, M. Gladysiewicz-kudrawiec et al., Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of band gap alignment, Journal of applied physics, vol.125, 2019.

O. Delorme, L. Cerutti, E. Luna, G. Narcy, A. Trampert et al., Molecularbeam epitaxy of GaInSbBi alloys, Submitted to Journal of applied Physics
URL : https://hal.archives-ouvertes.fr/hal-02326087

E. Rogowicz, W. M. Linhart, M. Syperek, J. Kopaczek, O. Delorme et al.,

R. Rodriguez and . Kudrawiec, Optical properties and dynamics of excitons in Ga(Sb,Bi)/GaSb quantum wells: evidence for a regular alloy behavior

L. Delorme, E. Cerutti, J. Tournié, and . Rodriguez, Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys, Journal of Crystal Growth, vol.477, pp.144-148, 2017.
URL : https://hal.archives-ouvertes.fr/hal-02327261

O. Delorme, L. Cerutti, E. Tournié, and J. Rodriguez, Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys, 19th International Conference on Molecular-Beam Epitaxy (MBE2016), pp.4-9, 2016.
URL : https://hal.archives-ouvertes.fr/hal-02327261

O. Delorme, L. Cerutti, E. Tournié, and J. B. Rodriguez, Molecular Beam Epitaxy and characterization of high Bi content GaSbBi alloys, Oral: 13th Infrared Optoelectronics: Materials and devices (MIOMD-XI), pp.18-22, 2016.
URL : https://hal.archives-ouvertes.fr/hal-02327261

O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié et al., GaSbBi/GaSb quantum well laser diodes, 8th International Workshop on Bismuth-Containing Semiconductors, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01626914

O. Delorme, L. Cerutti, E. Tournié, and J. B. Rodriguez, High Bi-content GaSbBi alloys for mid-IR applications, pp.14-18, 2017.
URL : https://hal.archives-ouvertes.fr/hal-01905735

O. Delorme, L. Cerutti, E. Tournié, and J. Rodriguez, GaSbBi alloys for mid-infrared optoelectronics Freiburg Infrared Colloqium, 2017.

E. Luna, O. Delorme, L. Cerutti, E. Tournié, J. Rodriguez et al., Transmission Electron Microscopy of Ga(Sb,Bi) Epilayers and Quantum Wells for Optoelectronic Applications, p.8
URL : https://hal.archives-ouvertes.fr/hal-01905702

, International Workshop on Bismuth-Containing Semiconductors, 2017.

I. Marko, O. Delorme, L. Cerutti, E. Tournié, J. B. Rodriguez et al.,

, GaSbBi/GaSb quantum well lasers studied under high hydrostatic pressure" Conference on Midinfrared Optoelectronics: Materials and Devices (MIOMD), Paper MIOMD-TuM11, 2018.

O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié et al., Study of In incorporation into GaSbBi alloys, 20 th European Workshop on Molecular Beam Epitaxy, pp.17-20, 2019.
URL : https://hal.archives-ouvertes.fr/hal-02327229

O. Delorme, L. Cerutti, E. Luna, A. Trampert, E. Tournié et al., Molecular-beam epitaxy of GaInSbBi alloys and QWs, 10 th International Workshop on Bismuth-Containing Semiconductors, 2019.
URL : https://hal.archives-ouvertes.fr/hal-02327216

E. Luna, O. Delorme, L. Cerutti, E. Tournié, J. Rodriguez et al., Transmission Electron Microscopy of, 10 th International Workshop on Bismuth-Containing Semiconductors, 2019.
URL : https://hal.archives-ouvertes.fr/hal-01905702

O. Delorme, L. Cerutti, E. Luna, R. Kudrawiec, J. Kopaczek et al., Development of GaSbBi for the Fabrication of Mid-IR Laser Diodes, 14th International Conference on Mid-IR Optoelectronics: Materials and Devices MIOMD-XIV (MIOMD 2018), 2018.
URL : https://hal.archives-ouvertes.fr/hal-02078153

O. Delorme, L. Cerutti, R. Kudrawiec, E. Luna, J. Kopaczek et al., Recent advances in the molecular beam epitaxy of GaSbBi alloys and quantum wells, 20 th International Conference on Molecular-Beam Epitaxy (MBE 2018), pp.2-8
URL : https://hal.archives-ouvertes.fr/hal-02078204

O. Delorme, L. Cerutti, E. Tournié, and J. Rodriguez, Growth and characterization of high Bi content GaSbBi alloys" 19th Euro-MBE conference, 2017.

O. Delorme, L. Cerutti, E. Tournié, and J. Rodriguez, Ga(In)SbBi alloys for mid-IR applications: growth and characterization, 16 ème Journées Nano, Micro et Optoélectronique (JNMO 2018), pp.13-15
URL : https://hal.archives-ouvertes.fr/hal-02327294

J. and C. Esterel,

O. Delorme, L. Cerutti, R. Kudrawiec, E. Luna, J. Kopaczek et al., GaSbBi/GaSb quantum wells for Mid-Infrared: growth and characterization, 34th International Conference on the Physics of Semiconductors, p.29
URL : https://hal.archives-ouvertes.fr/hal-02327289

O. Delorme, L. Cerutti, E. Tournié, and J. B. Rodriguez, Progress of multicolor single detector to detector array development for remote sensing, Award Best poster award at the 16 ème Journées Nano, Micro et Optoélectronique (JNMO 2018, vol.5543, pp.239-247, 2004.

M. Bahriz, G. Lollia, A. N. Baranov, and R. Teissier, High temperature operation of far infrared (? ~ 20 ?m) InAs/AlSb quantum cascade lasers with dielectric waveguide, Optics Express, vol.23, issue.2, pp.1523-1528, 2015.

D. A. Beaton, R. B. Lewis, M. Masnadi-shirazi, and T. Tiedje, Temperature dependence of hole mobility in GaAs1?xBix alloys, Journal of Applied Physics, vol.108, issue.8, pp.686-687, 1956.

E. Bithell and W. Stobbs, Composition determination in the GaAs/(Al, Ga) As system using contrast in dark-field transmission electron microscope images, Philosophical Magazine A, vol.60, issue.1, pp.39-62, 1989.

M. A. Bolshov, Y. A. Kuritsyn, and Y. V. Romanovskii, Tunable diode laser spectroscopy as a technique for combustion diagnostics, Spectrochimica Acta Part B-Atomic Spectroscopy, vol.106, pp.45-66, 2015.

A. Bracker, M. Yang, B. Bennett, J. Culbertson, and W. Moore, Surface reconstruction phase diagrams for InAs, AlSb, and GaSb, Journal of crystal growth, vol.220, issue.4, pp.384-392, 2000.

R. Butkute, A. Geizutis, V. Pacebutas, B. Cechavicius, V. Bukauskas et al., Multi-quantum well Ga(AsBi)/GaAs laser diodes with more than 6% of bismuth, Electronics Letters, vol.50, issue.16, pp.1155-1156, 2014.

R. Butkut?, V. Pa?ebutas, A. Krotkus, N. Knaub, and K. Volz, Migration-enhanced epitaxy of thin GaAsBi layers, Lithuanian Journal of Physics, vol.54, issue.2, 2014.

R. Butkut?, K. Sta?ys, V. Pa?ebutas, B. ?echavi?ius, R. Kondrotas et al., Apport des techniques d'épitaxie à la technologie du MOSFET ultime : Réalisation et étude d'hétérostructures IV-IV contraintes en tension sur Si(001, Optical and Quantum Electronics, vol.47, issue.4, pp.873-882, 2003.

P. Carrier and S. Wei, Calculated spin-orbit splitting of all diamondlike and zinc-blende semiconductors: Effects of p 1? 2 local orbitals and chemical trends, Physical Review B, vol.70, issue.3, p.35212, 2004.

A. Castellano, L. Cerutti, J. B. Rodriguez, G. Narcy, A. Garreau et al., Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si, Applied Physics Letters, vol.2, issue.6, p.101102, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01626979

N. Chen, Y. Wang, H. He, and L. Lin, Effects of point defects on lattice parameters of semiconductors, Physical Review B, vol.54, issue.12, p.8516, 1996.

H. Choi, S. Eglash, and G. Turner, Double-heterostructure diode lasers emitting at 3 ?m with a metastable GaInAsSb active layer and AlGaAsSb cladding layers, Applied physics letters, vol.64, pp.2474-2476, 1994.

[. Choi, T. Choi, and G. Turner, Antimonide-based strained quantum-well diode lasers, Physica Scripta, issue.T69, p.17, 1997.

. C. Coffey-2011]-v and . Coffey, Seeing in the dark: Defense applications of IR imaging, Optics and Photonics News, vol.22, issue.4, pp.26-31, 2011.

S. Das, T. Das, S. Dhar, M. De-la-mare, and A. Krier, Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy, Infrared physics & technology, vol.55, issue.1, pp.156-160, 2012.

V. Degtyareva, M. Winzenick, and W. Holzapfel, Crystal structure of InBi under pressure up to 75 GPa, Physical Review B, vol.57, issue.9, p.4975, 1998.

]. O. Delorme-2017a, L. Delorme, E. Cerutti, J. Tournié, and . Rodriguez, Molecular beam epitaxy and characterization of high Bi content GaSbBi alloys, Journal of Crystal Growth, vol.477, pp.144-148, 2017.

]. O. Delorme-2017b, L. Delorme, E. Cerutti, G. Luna, A. Narcy et al., GaSbBi/GaSb quantum well laser diodes, Applied Physics Letters, vol.110, issue.22, p.222106, 2017.

;. O. Delorme, L. Delorme, E. Cerutti, J. B. Tournié, and . Rodriguez, In situ determination of the growth conditions of GaSbBi alloys, Journal of Crystal Growth, vol.495, pp.9-13, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02080206

L. Dominguez, D. F. Reyes, F. Bastiman, D. L. Sales, R. Richards et al., Formation of tetragonal InBi clusters in InAsBi/InAs (100) heterostructures grown by molecular beam epitaxy, Journal of Crystal Growth, vol.6, issue.11, pp.5-11, 2013.

D. Fan, P. C. Grant, S. Yu, V. G. Dorogan, X. Hu et al., MBE grown GaAsBi/GaAs double quantum well separate confinement heterostructures, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.31, issue.3, pp.3-105, 2013.

M. Ferhat and A. Zaoui, Structural and electronic properties of III-V bismuth compounds, Physical Review B, vol.73, issue.11, p.115107, 2006.
URL : https://hal.archives-ouvertes.fr/hal-00069764

H. Fitouri, Y. Essouda, I. Zaied, A. Rebey, and B. E. Jani, Photoreflectance and photoluminescence study of localization effects in GaAsBi alloys, Optical Materials, vol.42, pp.67-71, 2015.

B. Fluegel, S. Francoeur, A. Mascarenhas, S. Tixier, E. C. Young et al., Giant Spin-Orbit Bowing in GaAsBi, Physical Review Letters, vol.97, issue.6, p.67205, 2006.

K. Forghani, Y. Guan, A. W. Wood, A. Anand, S. E. Babcock et al., Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1? yBiy, Journal of Crystal Growth, vol.395, pp.38-45, 2014.

S. Francoeur, M. J. Seong, A. Mascarenhas, S. Tixier, M. Adamcyk et al., Band gap of GaAs1-x Bix, 0<x<3.6%, Appl Phys Lett, vol.82, 2003.

T. Fuyuki, R. Yoshioka, K. Yoshida, and M. Yoshimoto, Long-wavelength emission in photo-pumped GaAs1-xBix laser with low temperature dependence of lasing wavelength, Applied Physics Letters, vol.103, issue.20, p.4, 2013.

T. Fuyuki, K. Yoshida, R. Yoshioka, and M. Yoshimoto, Electrically pumped roomtemperature operation of GaAs1-xBix laser diodes with low-temperature dependence of oscillation wavelength, Applied Physics Express, vol.7, issue.8, p.4, 2014.

D. Garbuzov, R. Martinelli, H. Lee, P. York, R. Menna et al., 2.7-?m InGaAsSb/AlGaAsSb laser diodes with continuous wave operation up to-39° c. IEEE Princeton Section Sarnoff Symposium, IEEE, Scientific World Journal, p.6, 1995.

M. Gladysiewicz, R. Kudrawiec, and M. Wartak, Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range, Journal of Applied Physics, vol.119, issue.7, p.75701, 2016.

F. Glas, G. Patriarche, L. Largeau, and A. Lemaître, Determination of the Local Concentrations of Mn Interstitials and Antisite Defects in GaMnAs, Physical review letters, vol.93, issue.8, 2004.

S. E. Godoy, D. A. Ramirez, S. A. Myers, G. Winckel, S. Krishna et al.,

P. Padilla, S. Sen, and . Krishna, Dynamic infrared imaging for skin cancer screening, Infrared Physics & Technology, vol.70, pp.147-152, 2015.

Y. Gu, K. Wang, H. Zhou, Y. Li, C. Cao et al., Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy, Nanoscale research letters, vol.9, issue.1, p.24, 2014.

A. A. Gurjarpadhye, M. B. Parekh, A. Dubnika, J. Rajadas, and M. Inayathullah, Infrared Imaging Tools for Diagnostic Applications in Dermatology, SM journal of clinical and medical imaging, vol.1, issue.1, pp.1-5, 2015.

J. Hilska, E. Koivusalo, J. Puustinen, S. Suomalainen, and M. Guina, Epitaxial phases of high Bi content GaSbBi alloys, Journal of Crystal Growth, vol.516, pp.67-71, 2019.

Y. Horikoshi, M. Kawashima, H. Yamaguchi, ;. Hosoda, G. Kipshidze et al., Type-I GaSb-Based Laser Diodes Operating in 3.1-to 3.3 µm Wavelength Range, Japanese journal of applied physics, vol.27, issue.2R, pp.718-720, 1988.

T. P. Humphreys, P. K. Chiang, S. M. Bedair, and N. R. Parikh, Metalorganic chemical vapor deposition and characterization of the In-As-Sb-Bi material system for infrared detection, Applied Physics Letters, vol.53, issue.2, pp.142-144, 1988.

A. Janotti, S. Wei, and S. Zhang, Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs, Physical Review B, vol.65, issue.11, p.115203, 2002.

A. M. Jean-louis, B. Ayrault, and J. Vargas, Propriétés des alliages InSb1?xBix II. Absorption Optique, physica status solidi (b), vol.34, issue.1, pp.341-350, 1969.

, Propriétés des alliages InSb1?xBix I. Mesures électriques, physica status solidi (b), vol.34, issue.1, pp.329-340, 1969.

, Growth of InSb1-xBix single crystals by Czochralski method, Journal of Crystal Growth, vol.12, issue.2, pp.169-172, 1972.

R. Kaspi and G. P. Donati, Digital alloy growth in mixed As/Sb heterostructures, Journal of crystal growth, vol.251, issue.1-4, pp.515-520, 2003.

B. Keen, R. Makin, P. Stampe, R. Kennedy, S. Sallis et al., Growth parameters for thin film InBi grown by molecular beam epitaxy, Journal of electronic materials, vol.43, issue.4, pp.914-920, 2014.

;. H. Kim, Y. X. Kim, S. E. Guan, T. F. Babcock, L. J. Kuech et al., Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing, Journal of Applied Physics, vol.123, issue.11, p.7, 2018.

J. Kim, L. Shterengas, R. Martinelli, and G. Belenky, High-power room-temperature continuous wave operation of 2.7 and 2.8 ?m In (Al) GaAsSb/GaSb diode lasers, Applied physics letters, vol.83, issue.10, pp.1926-1928, 2003.

R. N. Kini, L. Bhusal, A. J. Ptak, R. France, and A. Mascarenhas, Electron Hall mobility in GaAsBi, Journal of Applied Physics, vol.106, issue.4, p.43705, 2009.

J. Kopaczek, R. Kudrawiec, W. Linhart, M. Rajpalke, K. Yu et al., Temperature dependence of the band gap of GaSb1? xBix alloys with 0< x? 0.042 determined by photoreflectance, Applied Physics Letters, vol.103, issue.26, p.261907, 2013.

J. Kopaczek, M. Rajpalke, W. Linhart, T. Jones, M. Ashwin et al., Photoreflectance spectroscopy of GaInSbBi and AlGaSbBi quaternary alloys, Applied Physics Letters, vol.105, issue.11, p.112102, 2014.

]. J. Kopaczek-2014b, R. Kopaczek, W. Kudrawiec, M. Linhart, T. Rajpalke et al., Low-and high-energy photoluminescence from GaSb1? xBix with 0< x? 0.042, Applied Physics Express, vol.7, issue.11, p.111202, 2014.

J. Kopaczek, W. Linhart, M. Baranowski, R. Richards, F. Bastiman et al., Optical properties of GaAsBi/GaAs quantum wells: Photoreflectance, photoluminescence and time-resolved photoluminescence study, Semiconductor Science and Technology, vol.30, issue.9, p.94005, 2015.

R. Kudrawiec, M. Syperek, P. Poloczek, J. Misiewicz, R. Mari et al., Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers, Journal of Applied Physics, vol.106, issue.2, p.113508, 2009.

, Sb 0.08 layers, Physical Review B, vol.88, issue.12, p.125201

R. Kudrawiec, J. Kopaczek, O. Delorme, M. Polak, M. Gladysiewicz et al., Type I GaSb1-xBix/GaSb quantum wells dedicated for mid infrared laser applications: Photoreflectance studies of bandgap alignment, Journal of Applied Physics, vol.125, 2019.

P. Laffaille, J. C. Moreno, R. Teissier, M. Bahriz, and A. N. Baranov, High temperature operation of short wavelength InAs-based quantum cascade lasers, Aip Advances, vol.2, issue.2, 2012.
URL : https://hal.archives-ouvertes.fr/hal-01620379

P. Lautenschlager, M. Garriga, S. Logothetidis, and M. Cardona, INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE, Physical Review B, vol.35, issue.17, pp.9174-9189, 1987.

H. Lee, P. York, R. Menna, R. Martinelli, D. Garbuzov et al., Room-temperature 2.78 ?m AlGaAsSb/InGaAsSb quantum-well lasers, Applied physics letters, vol.66, issue.15, pp.1942-1944, 1995.

J. Lee, J. Kim, and M. Razeghi, Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates, Applied physics letters, vol.71, issue.16, pp.2298-2300, 1997.

]. J. -1998, J. Lee, M. Kim, and . Razeghi, Room temperature operation of 8-12 ?m InSbBi infrared photodetectors on GaAs substrates, Applied physics letters, vol.73, issue.5, pp.602-604, 1998.

O. Lemine, A. Alkaoud, H. A. Galeti, V. O. Gordo, Y. G. Gobato et al., Thermal annealing effects on the optical and structural properties of (1 0 0) GaAs1? xBix layers grown by molecular beam epitaxy, Superlattices and Microstructures, vol.65, pp.48-55, 2014.

R. Lewis, M. Masnadi-shirazi, T. B. Tiedje-;-r, and . Lewis, Molecular Beam Epitaxy Growth Technology and Properties of GaAsBi Alloys, Applied Physics Letters, vol.101, issue.8, p.82112, 2012.

C. Lin, M. Grau, O. Dier, and M. Amann, Low threshold room-temperature continuous-wave operation of 2.24-3.04 ?m GaInAsSb/AlGaAsSb quantum-well lasers, Applied physics letters, vol.84, issue.25, pp.5088-5090, 2004.

W. Linhart, M. Gladysiewicz, J. Kopaczek, M. Rajpalke, M. Ashwin et al., Indium-incorporation enhancement of photoluminescence properties of Ga (In) SbBi alloys, Journal of Physics D: Applied Physics, vol.50, issue.37, p.375102, 2017.

W. Linhart and R. Kudrawiec, Temperature dependence of band gaps in dilute bismides, Semiconductor Science and Technology, vol.33, issue.7, p.73001, 2018.

C. Liu, T. L. Hughes, X. Qi, K. Wang, S. Zhang et al., Electrically injected GaAsBi/GaAs single quantum well laser diodes, Physical review letters, vol.100, issue.23, p.8, 2008.

T. Liu, S. Chandril, A. Ptak, D. Korakakis, and T. Myers, Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN and GaInAsN grown by molecular beam epitaxy, Journal of crystal growth, vol.304, issue.2, pp.402-406, 2007.

S. Logothetidis, L. Via, M. Cardona, ;. X. Lu, D. Beaton et al., Temperature dependence of the dielectric function and the interband critical points of InSb, Applied Physics Letters, vol.31, issue.2, p.3, 1985.

E. Luna, Á. Guzmán, A. Trampert, and G. Álvarez, Critical role of two-dimensional island-mediated growth on the formation of semiconductor heterointerfaces, Physical review letters, vol.109, issue.12, p.126101, 2012.

E. Luna, M. Wu, M. Hanke, J. Puustinen, M. Guina et al., Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1? x Bi x/GaAs quantum wells, Nanotechnology, vol.27, issue.32, p.325603, 2016.

E. Luna, O. Delorme, L. Cerutti, E. Tournie, J. B. Rodriguez et al., Microstructure and interface analysis of emerging Ga(Sb,Bi) epilayers and Ga(Sb,Bi)/GaSb quantum wells for optoelectronic applications, Applied Physics Letters, vol.112, issue.15, p.5, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01770179

E. Luna, O. Delorme, L. Cerutti, E. Tournie, J. B. Rodriguez et al., Transmission electron microscopy of Ga(Sb, Bi)/GaSb quantum wells with varying Bi content and quantum well thickness, Semiconductor Science and Technology, vol.33, issue.9, p.8, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02080292

. Y. Ma-1989]-k, Z. M. Ma, D. H. Fang, R. M. Jaw, G. B. Cohen et al., Organometallic vapor phase epitaxial growth and characterization of InAsBi and InAsSbBi, Applied Physics Letters, vol.55, issue.23, pp.2420-2422, 1989.

S. Maddox, A. Vasudev, V. Dasika, M. Brongersma, and S. Bank, Bismuth Surfactant-Mediated Epitaxy of Highly Doped InAs for Mid-Infrared Plasmonics. North American Molecular Beam Epitaxy Conf.(NAMBE), 2012.

H. Makhloufi, P. Boonpeng, S. Mazzucato, J. Nicolai, A. Arnoult et al., Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing, Nanoscale research letters, vol.9, issue.1, p.123, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01723509

I. P. Marko, S. R. Jin, K. Hild, Z. Batool, Z. L. Bushell et al., Properties of hybrid MOVPE/MBE grown GaAsBi/GaAs based near-infrared emitting quantum well lasers, Semiconductor Science and Technology, vol.30, issue.9, p.10, 2015.

S. Mazzucato, P. Boonpeng, H. Carrère, D. Lagarde, A. Arnoult et al., Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence, Semiconductor Science and Technology, vol.28, issue.2, 2013.
URL : https://hal.archives-ouvertes.fr/hal-02050522

S. Mazzucato, H. Lehec, H. Carrère, H. Makhloufi, A. Arnoult et al., Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi, Nanoscale research letters, vol.9, issue.1, p.19, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01943032

P. Mohan, S. M. Babu, P. Santhanaraghavan, and P. Ramasamy, Growth, phase analysis and mechanical properties of InSb1? xBix crystals, Materials chemistry and physics, vol.66, issue.1, pp.17-21, 2000.

A. R. Mohmad, F. Bastiman, C. Hunter, J. Ng, S. Sweeney et al., Atmospheric-pressure metalorganic vapour phase epitaxy optimization of GaAsBi alloy, Effect of thermal annealing on structural and optical properties of the GaAs0. 963Bi0. 037 alloy, vol.99, p.125034, 2008.

H. Nguyen-van, A. N. Baranov, Z. Loghmari, L. Cerutti, J. B. Rodriguez et al., Quantum cascade lasers grown on silicon, Scientific Reports, vol.8, issue.8, 2018.
URL : https://hal.archives-ouvertes.fr/hal-02078298

A. J. Noreika, W. J. Takei, M. H. Francombe, and C. E. Wood, Indium antimonide-bismuth compositions grown by molecular beam epitaxy, Journal of Applied Physics, vol.53, issue.7, pp.4932-4937, 1982.

R. O&apos;malley, E. Jones, and M. Glavin, Detection of pedestrians in far-infrared automotive night vision using region-growing and clothing distortion compensation, Infrared Physics & Technology, vol.53, issue.6, pp.439-449, 2010.

K. Oe, S. Ando, and K. Sugiyama, InSb1-xBix Films Grown by Molecular Beam Epitaxy, Japanese Journal of Applied Physics, vol.20, issue.4, pp.303-306, 1981.

K. Oe and H. Okamoto, New semiconductor alloy GaAs1-xBix grown by metal organic vapor phase epitaxy, Japanese journal of applied physics, vol.37, issue.11A, p.1283, 1998.

K. Oe, Characteristics of semiconductor alloy GaAs1-xBix, Japanese Journal of Applied Physics, vol.41, issue.5R, p.2801, 2002.

Z. Pan, L. Li, W. Zhang, Y. Lin, and R. Wu, Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy, Applied Physics Letters, vol.77, issue.2, pp.214-216, 2000.

P. K. Patil, E. Luna, T. Matsuda, K. Yamada, K. Kamiya et al., , 2017.

, GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substratetemperature technique, Nanotechnology, vol.28, issue.10, p.105702

G. Pettinari, A. Polimeni, M. Capizzi, J. Blokland, P. Christianen et al., Influence of bismuth incorporation on the valence and conduction band edges of Ga As 1? x Bi x, Applied Physics Letters, vol.92, issue.26, p.262105, 2008.

A. F. Phillips, S. J. Sweeney, A. R. Adams, and P. J. Thijs, The temperature dependence of 1.3-and 1.5-/spl mu/m compressively strained InGaAs (P) MQW semiconductor lasers, IEEE Journal of selected topics in quantum electronics, vol.5, issue.3, pp.401-412, 1999.

M. Polak, P. Scharoch, R. Kudrawiec, J. Kopaczek, M. Winiarski et al., First-principles calculations of bismuth induced changes in the band structure of dilute Ga-V-Bi and In-V-Bi alloys: chemical trends versus experimental data, Journal of Physics D: Applied Physics, vol.47, issue.35, p.94001, 2014.

M. Rajpalke, W. Linhart, M. Birkett, K. Yu, D. Scanlon et al., Growth and properties of GaSbBi alloys, Applied Physics Letters, vol.103, issue.14, p.142106, 2013.

M. Rajpalke, W. Linhart, M. Birkett, K. Yu, J. Alaria et al., High Bi content GaSbBi alloys, Journal of applied physics, vol.116, issue.4, 2014.

M. Rajpalke, W. Linhart, K. Yu, M. Birkett, J. Alaria et al., Bi-induced band gap reduction in epitaxial InSbBi alloys, Applied Physics Letters, vol.105, issue.21, p.212101, 2014.

M. Rajpalke, W. Linhart, K. Yu, T. S. Jones, M. Ashwin et al., Bi fluxdependent MBE growth of GaSbBi alloys, Journal of Crystal Growth, vol.425, pp.241-244, 2015.

M. L. Rao, S. Shimada, O. Yamazaki, and M. Tanaka, Cross-coupling reaction of organobismuth dialkoxides with aryl bromides and iodides catalyzed by Pd(PPh3)4, Journal of Organometallic Chemistry, vol.659, issue.1, pp.117-120, 2002.

M. Razeghi and B. Nguyen, Advances in mid-infrared detection and imaging: a key issues review, Reports on Progress in Physics, vol.77, issue.8, p.82401, 2014.

J. R. Reboul, L. Cerutti, J. B. Rodriguez, P. Grech, and E. Tournie, Continuouswave operation above room temperature of GaSb-based laser diodes grown on Si, Applied Physics Letters, vol.99, issue.12, p.3, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00641322

A. Reyes-reyes, Z. Hou, E. Van-mastrigt, R. C. Horsten, J. C. De-jongste et al., Multicomponent gas analysis using broadband quantum cascade laser spectroscopy, Optics Express, vol.22, issue.15, pp.18299-18309, 2014.

D. F. Reyes, F. Bastiman, C. J. Hunter, D. L. Sales, A. M. Sanchez et al., Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures, Nanoscale research letters, vol.9, issue.1, p.23, 2014.

D. R. Rhiger, Performance comparison of long-wavelength infrared type II superlattice devices with HgCdTe, Journal of electronic materials, vol.40, issue.8, pp.1815-1822, 2011.

J. Rodrigo, D. Sales, M. Shafi, M. Henini, L. Turyanska et al., Effect of annealing on the structural and optical properties of (3 1 1) B GaAsBi layers, Applied Surface Science, vol.256, issue.18, pp.5688-5690, 2010.

G. V. Rodriguez and J. M. Millunchick, Predictive modeling of low solubility semiconductor alloys, Journal of Applied Physics, vol.120, issue.12, p.125310, 2016.

D. Samajdar, T. Das, and S. Dhar, Calculation of Direct E 0 Energy Gaps for III-V-Bi Alloys Using Quantum Dielectric Theory, Physics of Semiconductor Devices, pp.779-781, 2014.

I. Sandall, F. Bastiman, B. White, R. Richards, D. Mendes et al., The influence of growth temperature on Sb incorporation in InAsSb, and the temperature-dependent impact of Bi surfactants, Journal of Crystal Growth, vol.104, issue.17, pp.8-11, 2014.

T. Schmidt, K. Lischka, and W. Zulehner, EXCITATION-POWER DEPENDENCE OF THE NEAR-BAND-EDGE PHOTOLUMINESCENCE OF SEMICONDUCTORS, Physical Review B, vol.45, issue.16, pp.8989-8994, 1992.

K. Scholle, S. Lamrini, P. Koopmann, and P. Fuhrberg, 2 µm laser sources and their possible applications. Frontiers in Guided Wave Optics and Optoelectronics, IntechOpen, Chemical Society Reviews, vol.46, pp.5903-5924, 2010.

M. Shakfa, D. Kalincev, X. Lu, S. Johnson, D. Beaton et al., Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.114, issue.16, pp.2-114, 2012.

]. J. Steele-2016, R. A. Steele, J. Lewis, M. J. Horvat, M. Nancarrow et al., Surface effects of vapour-liquid-solid driven Bi surface droplets formed during molecular-beam-epitaxy of GaAsBi, Journal of Crystal Growth, vol.408, pp.71-77, 2014.

S. J. Sweeney and S. R. Jin, Bismide-nitride alloys: Promising for efficient light emitting devices in the near-and mid-infrared, Journal of Applied Physics, vol.113, issue.4, 2013.

C. R. Tait, J. M. Millunchick-;-c, L. Tait, J. M. Yan, and . Millunchick, Lattice distortion of GaAsBi alloy grown on GaAs by molecular beam epitaxy, Japanese journal of applied physics, vol.119, issue.21, p.67, 2006.

B. Tan, C. Zhang, W. Zhou, X. Yang, G. Wang et al., The 640× 512 LWIR type-II superlattice detectors operating at 110 K, Infrared Physics & Technology, vol.89, pp.168-173, 2018.

M. Z. Tidrow and W. R. Dyer, Infrared sensors for ballistic missile defense, Infrared Physics & Technology, vol.42, issue.3-5, pp.333-336, 2001.

T. Tiedje, E. Young, and A. Mascarenhas, Growth and properties of the dilute bismide semiconductor GaAs1-xBix a complementary alloy to the dilute nitrides, International Journal of Nanotechnology, vol.5, issue.9, p.963, 2008.

F. K. Tittel and R. Lewicki, Tunable mid-infrared laser absorption spectroscopy. Semiconductor Lasers. A. Baranov and E. Tournié, pp.579-629, 2013.

S. Tixier, M. Adamcyk, E. Young, J. Schmid, and T. Tiedje, Surfactant enhanced growth of GaNAs and InGaNAs using bismuth, Journal of crystal growth, vol.251, issue.1-4, pp.449-454, 2003.

S. Tixier, M. Adamcyk, T. Tiedje, S. Francoeur, A. Mascarenhas et al., Low Temperature Dependence of Oscillation Wavelength in GaAs1-xBix Laser by Photo-Pumping, Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi, vol.82, p.42106, 2003.

Y. P. Varshni, Temperature dependence of the energy gap in semiconductors, Physica, vol.34, issue.1, pp.149-154, 1967.

A. Vizbaras, E. Dvinelis, A. Trink?nas, I. ?imonyte, M. Greibus et al., High-performance mid-infrared GaSb laser diodes for defence and sensing applications, Laser Technology for Defense and Security X, International Society for Optics and Photonics, 2014.

I. Vurgaftman, J. Á. Meyer, L. Á. Ram-mohan, ;. I. Vurgaftman, R. Weih et al., Band parameters for III-V compound semiconductors and their alloys, Journal of Physics D: Applied Physics, vol.89, issue.11, pp.5815-5875, 2001.

J. P. Waclawek, R. Lewicki, H. Moser, M. Brandstetter, F. K. Tittel et al., Quartz-enhanced photoacoustic spectroscopy-based sensor system for sulfur dioxide detection using a CW DFB-QCL, Applied Physics B-Lasers and Optics, vol.117, issue.1, pp.113-120, 2014.

M. Wagener, J. Botha, and A. Leitch, Characterization of secondary phases formed during MOVPE growth of InSbBi mixed crystals, Journal of crystal growth, vol.213, issue.1-2, pp.51-56, 2000.

L. Wang, L. Zhang, L. Yue, D. Liang, X. Chen et al., Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 ?m, Applied Physics Letters, vol.7, issue.3, pp.3675-3677, 2002.

U. Willer, M. Saraji, A. Khorsandi, P. Geiser, and W. Schade, Near-and midinfrared laser monitoring of industrial processes, environment and security applications, Optics and Lasers in Engineering, vol.44, issue.7, pp.699-710, 2006.

G. Winnewisser, Submillimeter and infrared astronomy: Recent scientific and technical developments, Infrared Physics & Technology, vol.35, issue.2-3, pp.551-567, 1994.

A. W. Wood, K. Collar, J. Li, A. S. Brown, S. E. Babcock et al., Magnesium-and calcium-doping behavior in molecular-beam epitaxial III-V compounds, Journal of Applied Physics, vol.27, issue.11, pp.4230-4235, 1982.

X. Y. Wu, W. W. Pan, Z. P. Zhang, Y. Y. Li, C. F. Cao et al., mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy, Acs Photonics, vol.4, issue.6, pp.1322-1326, 2017.

J. Yoshida, T. Kita, O. Wada, K. Oe-;-m.-yoshimoto, S. Murata et al., Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy, Japanese journal of applied physics, vol.42, issue.2R, p.371, 2003.

, Metastable GaAsBi alloy grown by molecular beam epitaxy, Japanese journal of applied physics, vol.42, issue.10B, p.1235

M. Yoshimoto, M. Itoh, Y. Tominaga, and K. Oe, Quantitative estimation of density of Bi-induced localized states in GaAs1?xBix grown by molecular beam epitaxy, Journal of Crystal Growth, vol.378, pp.73-76, 2013.

D. L. Young, J. F. Geisz, and T. J. Coutts, Nitrogen-induced decrease of the electron effective mass in GaAs 1? x N x thin films measured by thermomagnetic transport phenomena, Applied physics letters, vol.82, issue.8, pp.1236-1238, 2003.

E. Young, S. Tixier, and T. Tiedje, Bismuth surfactant growth of the dilute nitride GaNxAs1? x, Journal of crystal growth, vol.279, issue.3-4, pp.316-320, 2005.

L. Yue, X. Chen, Y. Zhang, F. Zhang, L. Wang et al., Molecular beam epitaxy growth and optical properties of high bismuth content GaSb1-xBix thin films, Journal of Alloys and Compounds, vol.742, pp.780-789, 2018.

]. L. Yue-2018b, X. Yue, Y. Chen, J. Zhang, J. Kopaczek et al., Structural and optical properties of GaSbBi/GaSb quantum wells, Optical Materials Express, vol.8, issue.4, pp.893-900, 2018.

J. Zilko and J. Greene, Growth and phase stability of epitaxial metastable InSb1? x Bi x films on GaAs. I. Crystal growth, Journal of Applied Physics, vol.51, issue.3, pp.1549-1559, 1980.