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, Tests sur le banc LISA 1064 nm
, Comparaison des résultats de test laser et ions lourds, p.140
, Phénomène de latchup dans une structure CMOS -état de l'art, p.150
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, IV.2.1 Conception du composant et choix technologiques, p.155
, Étude de la sensibilité de l'ASIC sous faisceau d'ions lourds et par simulation158 IV.3.1 Présentation du banc de test
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, Étude de la sensibilité au SEL au moyen d'impulsions laser, p.161
, Préparation des composants et adaptation du banc de test, p.162
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