Skip to Main content Skip to Navigation
Theses

Analyse par XPS d'empilements High-K Metal Gate de transistors CMOS et corrélation des décalages d'énergie de liaison aux tensions de seuil

Abstract : The last microelectronic technologies includes transistors with materials of high dielectric constant (high-k ) associated to metal gate (we use the abbreviation HKMG for high-k - bad metal). If this pile allows to keep a sufficient quantity of charges in the channel, it is more difficult to check the threshold voltage of transistors because of the presence of charge and of dipole in these layers or in the interfaces. Two preliminary studies established that there is a correlation between the binding energies measured by XPS of a pile HKMG and the threshold voltage of a transistor using the same pile. Charges are present in the insulating layers of piles HKMG, leading to a difference of the electrostatic potential within these layers. A modification of the effective workfunction of the metallic electrode of the transistor in s then observed, and in XPS these charges lead t oa variation of the kinetic energy of electrons extracted from the layer. The purpose of this thesis is simulate in a quantitative way the electrostatic impact of this charges and dipôles and to compare this impact with the observation made by XPS as well as with the electric measures of the threshold voltage of transistors. This will then allow to estimate the variation of the threshold voltage of transistors well further in the manufacturing process.
Complete list of metadatas

Cited literature [149 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-02336807
Contributor : Abes Star :  Contact
Submitted on : Tuesday, October 29, 2019 - 10:12:18 AM
Last modification on : Wednesday, October 14, 2020 - 4:19:15 AM
Long-term archiving on: : Thursday, January 30, 2020 - 2:11:41 PM

File

FONTAINE_2019_archivage.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-02336807, version 1

Collections

Citation

Charly Fontaine. Analyse par XPS d'empilements High-K Metal Gate de transistors CMOS et corrélation des décalages d'énergie de liaison aux tensions de seuil. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2019. Français. ⟨NNT : 2019GREAT011⟩. ⟨tel-02336807⟩

Share

Metrics

Record views

168

Files downloads

141