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Relations structure - propriétés de conduction dans des films W-Cu nanostructurés

Abstract : W and W-Cu thin films were deposited by the GLAD co-sputtering technique from two opposite targets: W and Cu. Each target was focused on the center of the substrate with a tilt angle of α = 80 °. Several series were prepared changing some experimental parameters: the sputtering pressure, the film’s thickness as well as the target currents. The nature of as-deposited films and their morphological properties were studied in order to understand the correlations between some structural characteristics and electrical behaviors of these structured films. The experimental parameters play a key-role on the shape of the columns, their angle of inclination, and the elemental composition of these W-Cu films. The influence of these parameters on the films morphology was demonstrated and related to the electronic transport properties in these columnar films. The copper was chemically etched in order to obtain a more porous structure, with the aim of improving the electrical anisotropy. A theoretical model was also developed in order to understand the electrical conductivity mechanism in these columnar films taking into account the anisotropic structure of the columns. This model was applied to W, as-deposited W-Cu and etched W-Cu films.
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Submitted on : Friday, October 11, 2019 - 4:06:17 PM
Last modification on : Tuesday, October 27, 2020 - 2:34:25 PM


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  • HAL Id : tel-02313946, version 1


Raya El Beainou. Relations structure - propriétés de conduction dans des films W-Cu nanostructurés. Chimie-Physique [physics.chem-ph]. Université Bourgogne Franche-Comté, 2019. Français. ⟨NNT : 2019UBFCD004⟩. ⟨tel-02313946⟩



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