Etude du bruit électrique basse fréquence dans des technologies CMOS avancées

Abstract : The work done during this thesis focuses on the study of fully depleted double gate UTBOX transistors manufactured for the 16 nm technology node. The performances of these components in DC and as a function of temperature were evaluated. The traps located in the silicon film have been identified using low frequency noise spectroscopy, giving the possibility of evaluating the manufacturing steps in order to optimize them. An unusual peak of transconductance was observed in the transfer characteristics obtained at low temperatures (77 K and 10 K). This phenomenon is most likely related to a tunneling effect through dopants scattered from the source and drain extensions in the channel. The quantum transport mechanism related to the degeneracy of energy levels in the conduction band has been demonstrated at cryogenic temperatures and at very low polarizations. A new theoretical approach valid in moderate inversion has been developed for models of mobility fluctuations and mobility fluctuations correlated with the number of carriers fluctuations. The results indicate that the change in carrier transport mechanism is accompanied by a change in the 1 / f noise mechanism.
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Beya Nafaa. Etude du bruit électrique basse fréquence dans des technologies CMOS avancées. Automatique / Robotique. Normandie Université; Université de Carthage (Tunisie), 2018. Français. ⟨NNT : 2018NORMC273⟩. ⟨tel-02299236⟩

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