Etude de semi-conducteurs de type p nanostructurés à base de métaux de transition pour une application en DSSC-p

Abstract : To improve the performances of p-Dye Sensitized Solar Cell (p-DSSC), this thesis work focuses on the synthesis and the characterization of p-type semiconductors (p-SCs) nanomaterials. These p-SCs with some specifications (low energy valence band, high specific surface area, high conductivity and transparency) were thoroughly studied. In this context, a strategy was developed to improve the NiO nanoparticles properties (commonly used as a reference) with higher nickel non-stoichiometry and nitrogen doping to promote the stabilization of the Ni3+/Ni2+ mixed valence (origin of the p-typness). This study was initiated with a nanostructured mixed valent Ni3O2(OH)4 precursor. Its thermal decomposition in air and ammonia at low temperature (250 °C) allows the formation of nanostructured Ni1-xO with a large amount of Ni vacancies (V Ni = 25 %), a high specific surface area (240 m2.g-1) and a nitrogen doping (NiO:N). Moreover, two non-oxides materials with delafossite structure type, namely - nickel carbodiimide (NiNCN) and manganese carbodiimide (MnNCN) - were prepared and characterized as new p-type semiconductors. Thus, the first p-DSSC with NiNCN material was built with success.
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Baptiste Polteau. Etude de semi-conducteurs de type p nanostructurés à base de métaux de transition pour une application en DSSC-p. Matériaux. Université de Rennes 1, 2016. Français. ⟨tel-02289888⟩

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