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, Liste des publications

?. S. Fréchengues, V. Drouot, B. Lambert, D. Lemoine, S. Loualiche et al., Direct correlation of structural and optical properties of InAs selfassembled dots deposited on InP(100), Appl.Phys.Lett, vol.71, pp.2818-2820, 1997.

?. S. Fréchengues, V. Drouot, N. Bertru, B. Lambert, S. Loualiche et al., )B substrates emitting around 1.55 µm, Tenth International Conference on Molecular Beam Epitaxy, 1998.

?. D. Lacombe, A. Ponchet, S. Fréchengues, V. Drouot, N. Bertru et al., Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (001) and (113)B InP at low lattice mismatch, Tenth International Conference on Molecular Beam Epitaxy, 1998.

?. D. Lacombe, A. Ponchet, S. Fréchengues, V. Drouot, N. Bertru et al., Formation of low index facets in Ga 0.2 In 0.8 As and InAs islands on a InP(113)B substrate, soumis à Appl.Phys.Lett

?. S. Fréchengues, V. Drouot, B. Lambert, N. Bertru, S. Loualiche et al., Evidence of self-organization and lateral quantum confinement in (Ga)InAs dots grown on (311)B InP substrates, sousmis à Semicond.Sci.Technol

?. S. Fréchengues, N. Bertru, V. Drouot, B. Lambert, S. Robinet et al., Wavelength tuning of InAs quantum dots grown on (311)B InP, soumis à Appl.Phys.Lett

, Liste des conférences

?. V. Drouot, S. Fréchengues, B. Lambert, S. Loualiche, A. Le-corre et al., Growth study of self-assembled GaxIn1-xAs islands on InP, The 9th. International Conference of InP and Related Materials, IEEE, pp.463-466, 1996.

?. S. Fréchengues, V. Drouot, B. Lambert, D. Lemoine, S. Loualiche et al., Propriétés géométriques des îlots quantiques mesurées par AFM et comparaison avec la photoluminescence, 6èmes Journées Nationales de Microélectronique et, p.34, 1997.

?. V. Drouot, S. Fréchengues, B. Lambert, S. Loualiche, A. Le-corre et al., Etude de la croissance d'îlots auto organisés GaxIn1-xAs sur InP, 6ièmes Journées Nationales de Microélectronique et, p.36, 1997.

?. S. Fréchengues, V. Drouot, N. Bertru, B. Lambert, S. Loualiche et al., Self assembled InAs islands on InP (100) and (311)B: influence of the substrate orientation on the island distribution and organisation, Tenth International Conference on Molecular Beam Epitaxy, 1998.

?. D. Lacombe, A. Ponchet, S. Fréchengues, V. Drouot, N. Bertru et al., Elastic relaxation phenomena in compressive Ga 0.2 In 0.8 As grown on (001) and (113)B InP at low lattice mismatch, Tenth International Conference on Molecular Beam Epitaxy, 1998.

?. N. Bertru, S. Fréchengues, V. Drouot, O. Dehease, S. Loualiche et al., Réalisation d'empilements d'îlots quantiques émettant à 1,55µm avec une grande intensité lumineuse, 7èmes Journées Nationales de Microélectronique et Optoélectronique III-V, CNRS, 1998.

?. D. Lacombe, A. Ponchet, S. Fréchengues, V. Drouot, N. Bertru et al., De la croissance 2D à la croissance 3D dans le système GaInAs/InP, 7èmes Journées Nationales de Microélectronique et Optoélectronique III-V, CNRS, 1998.

?. S. Hinooda, N. Bertru, V. Drouot, S. Fréchengues, B. Lambert et al., Capture des porteurs dans les îlots quantiques InAs/InP, p.7

J. Nationales-de-microélectronique-et-optoélectronique, I. , and C. , Résumé: Nous nous sommes intéressé à la croissance et aux propriétés de couches contraintes de (Ga)InAs relaxées élastiquement, 1998.

, Ces plateaux présentent l'intérêt de localiser les porteurs jusqu'à température ambiante et de limiter la diffusion latérale des porteurs, ce qui maintient une forte intensité de luminescence à température ambiante. Les plateaux d'InAs sont équivalents à des puits 2D indépendants les uns des autres. Si on laisse évoluer les plateaux (si ils ne sont pas tout de suite encapsulés par une couche d'InP), des îlots apparaissent. Ils ont été observés par microscopie électronique en transmission et microscopie à force atomique. Les îlots d'InAs/InP sont plus gros, moins homogènes et en densité plus faible que pour le système InAs/GaAs avec lequel nous les avons comparés. La mise au point d'une nouvelle technique de caractérisation nous a permis d'attribuer la largeur du pic de luminescence à la distribution des hauteurs des îlots. Lorsque la concentration en Ga augmente (désaccord paramétrique inférieur et épaisseur nominale plus importante), la morphologie des couches ternaires de (Ga)InAs évolue vers des fils d'orientation bien déterminée. Nous avons interprété ces différents résultats à l'aide d'un modèle énergétique et décrit le phénomène de relaxation élastique. Pour favoriser la nucléation des îlots nous nous sommes alors intéressés à l'orientation (113)B. Son attrait provient d'une moindre augmentation du terme d'énergie de surface lors de la transition 2D-3D qui est alors favorisée, %, déposées sur un substrat InP orienté (001) et (113)B dans un bâti d'épitaxie par jets moléculaires à sources gazeuses. Sur InP(001) la relaxation est progressive au cours de l'interruption de croissance qui suit la croissance bidimensionnelle. la photoluminescence a montré que la couche d'InAs passe d'abord par une morphologie en « plateaux » de 2 à 8 MC d'épaisseur