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Corrélation luminescence/défauts étendus dans les structures à puits quantique InGaAs épitaxiées sélectivement sur substrats Si

Abstract : III-V semiconductors have remarkable properties of electronic mobility and optical emission. Their growth by MOCVD on 300 mm (001) silicon substrate offers the opportunity of manufacturing at low cost and to get new functionalities in microelectronic devices for electronic components and optical emitters. Thereby III-V growth on silicon has been a huge success in recent years. Monolithic integrations imply to develop very good quality of III-V layers epitaxied on silicon. That is why currently, the major issue is to reduce crystalline defect density such as stacking faults, antiphase boundaries and dislocations. Structural defects which impact these properties are still mainly studied at micrometric scale (Hall effect, photoluminescence,…) but they not have sufficient spatial resolution to dissociate the different physicochemical parameters. Consequently, these developments require adapted characterizations to control and to obtain physicochemical properties of III-V epitaxied layers on Si.The aim of this thesis is to develop a method to spatially correlate at nanoscale optical properties and morphological characteristics of III-As layers grown by MOCVD on 300 mm (001) Si. In the frame of this thesis, this method allowed to study InGaAs quantum wells (QW) epitaxied on GaAs buffer and on Si substrate with defect density reduction method the use of GaAs buffer layers and patterned growth (aspect ratio trapping (ART)). The study is based on two characterization techniques : cathodoluminescence (CL) which allows to spatially observe on bulk sample InGaAs QW energy emission and intensity, and transmission electronic microscopy (STEM/TEM) of thin lamella which give quantitative information on the morphology (layer thicknesses, defect positions, stoichiometry,…). The method developed allows to spatially correlate results of these two techniques. It is to realize several specific marks made by electron beam to localize and precisely extract interesting areas observed by CL. Strain measurements (N-PED) on TEM lamella is realized too.This correlated characterization method has highlighted physicochemical property modifications of InGaAs QW at nanoscale directly related to growth conditions and to threading dislocations presence.
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Submitted on : Monday, July 15, 2019 - 5:03:12 PM
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Joyce Roque. Corrélation luminescence/défauts étendus dans les structures à puits quantique InGaAs épitaxiées sélectivement sur substrats Si. Science des matériaux [cond-mat.mtrl-sci]. Université Grenoble Alpes, 2018. Français. ⟨NNT : 2018GREAY082⟩. ⟨tel-02183961⟩



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