, Cap -GaSb(p), pp.1-5
, , pp.1-5
, , pp.1-18
, , pp.2-17
, BSF/Buffer -GaSb(n) @1.5E18 -500nm
,
, PROMIS Solar cell on GaSb -L1, vol.2, p.5
High-efficiency, one-sun (22.3% at air mass 0; 23.9% at air mass 1.5) monolithic two-junction cascade solar cell grown by metalorganic vapor phase epitaxy, Applied physics letters, vol.52, issue.22, pp.1889-1891, 1988. ,
, Panorama de l'électricité renouvelable en 2016, pp.2017-2025
A fundamental look at energy reserves for the planet. The IEA SHC Solar Update, vol.50, 2009. ,
A record of NASA space missions since 1958, pp.2018-2027 ,
Solar cell efficiency tables (version 52), Progress in Photovoltaics, vol.26, issue.7, 2018. ,
Detailed balance limit of efficiency of p-n junction solar cells, Journal of applied physics, vol.32, issue.3, pp.510-519, 1961. ,
Module price index, pp.2019-2024 ,
, , pp.2018-2022
, Le coût de production de l'électricité nucléaire actualisation, 2014.
Lazard's levelized cost of energy analysis, pp.2018-2022, 2017. ,
Panorama de l'électricité renouvelable au 30 septembre, pp.2018-2019, 2017. ,
Photovoltaic materials: present efficiencies and future challenges, Science, vol.352, issue.6283, p.4424, 2016. ,
GaSb-based solar cells for full solar spectrum energy harvesting, Advanced Energy Materials, vol.7, issue.20, 2017. ,
Building a six-junction inverted metamorphic concentrator solar cell, IEEE Journal of Photovoltaics, 2017. ,
High-efficiency multijunction solar cells, MRS bulletin, vol.32, issue.3, pp.230-235, 2007. ,
Current status of concentrator photovoltaic (CPV) technology, 2015. ,
Proposing increased conversion efficiency by employing stacked, multijunction cells, Proceedings of Transactions of the Conference on the Use of Solar Ener-gy, vol.122, 1955. ,
GaAs concentrator solar cell, Applied Physics Letters, vol.26, issue.8, pp.467-470, 1975. ,
Design of high-efficiency monolithic stacked multijunction solar cells, 13th Photovoltaic Specialists Conference, pp.886-891, 1978. ,
Material and device considerations for cascade solar cells, IEEE Transactions on Electron Devices, vol.27, issue.4, pp.822-831, 1980. ,
Double heterojunction solar cells, US Patent, vol.4, p.593, 0191. ,
Growth and characterization of cascade solar cells, pp.408-412, 1981. ,
A 23.7 efficient one-sun GaAs solar cell, 19th IEEE Photovoltaic Specialists Conference, p.1492, 1987. ,
Next-generation, high-efficiency III-V multijunction solar cells, Photovoltaic Specialists Conference, pp.998-1001, 2000. ,
40% efficient metamorphic GaInP GaInAs Ge multijunction solar cells, Applied Physics Letters, vol.90, issue.18, p.183516, 2007. ,
Four-junction wafer-bonded concentrator solar cells, IEEE Journal of Photovoltaics, vol.6, issue.1, pp.343-349, 2016. ,
Raising the one-sun conversion efficiency of III-V/Si solar cells to 32.8% for two junctions and 35.9% for three junctions, Nature Energy, vol.2, issue.9, p.17144, 2017. ,
III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration, Nature Energy, vol.3, issue.4, p.326, 2018. ,
URL : https://hal.archives-ouvertes.fr/cea-01882171
Printing-based assembly of quadruple-junction four-terminal microscale solar cells and their use in high-efficiency modules, Nature materials, vol.13, issue.6, pp.593-598, 2014. ,
AlGaAs/Si dual-junction tandem solar cells by epitaxial lift-off and print-transfer-assisted direct bonding, Energy Science & Engineering, 2018. ,
Very high efficiency solar cell modules, Progress in Photovoltaics: Research and Applications, vol.17, issue.1, pp.75-83, 2009. ,
40% efficient sunlight to electricity conversion, Progress in Photovoltaics: Research and Applications, vol.23, issue.6, pp.685-691, 2015. ,
Thicknesses optimization of two-and three-junction photovoltaic cells with matched currents and matched lattice constants, Solar Energy, vol.158, pp.20-27, 2017. ,
,
, Ga 0.5 In 0.5 P/GaAs tandem solar cell, Applied Physics Letters, vol.56, issue.7, pp.623-625, 1990.
Flexible thin-film tandem solar cells with 30% efficiency, IEEE Journal of Photovoltaics, vol.4, issue.2, pp.729-733, 2014. ,
Effects of internal luminescence and internal optics on V OC and J SC of III-V solar cells, IEEE Journal of Photovoltaics, vol.3, issue.4, pp.1437-1442, 2013. ,
Lattice-matched and metamorphic GaInP/GaInAs/Ge concentrator solar cells, Proceedings of 3rd World Conference on, vol.1, pp.622-625, 2003. ,
Band-gap-engineered architectures for high-efficiency multijunction concentrator solar cells, European Photovoltaic Solar Energy Conference and Exhibition, vol.21, p.55, 2009. ,
High-efficiency multijunction solar cells employing dilute nitrides, AIP Conference Proceedings, vol.1477, pp.14-19, 2012. ,
Status of four-junction cell development at fraunhofer ISE, E3S Web of Conferences, vol.16, p.3009, 2017. ,
Advances in dilute nitride multi-junction solar cells for space power applications, E3S Web of Conferences, vol.16, p.3006, 2017. ,
,
, AlGaInP/Ge double-junction solar cell with Sb incorporation directly used for latticematched five-junction solar cell application, Japanese Journal of Applied Physics, vol.56, issue.2, p.25501, 2017.
Modeling, design and experimental results for high efficiency multi-junction solar cells lattice matched to InP. In Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, International Society for Optics and Photonics, vol.8981, p.898117, 2014. ,
Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy, Journal of Applied Physics, vol.117, issue.21, p.215704, 2015. ,
Development of wet etch processing for In x Al 1?x As y Sb 1?y solar cells grown on InP, Photovoltaic Specialist Conference (PVSC), pp.1-4, 2015. ,
Potential and activities of III-V/Si tandem solar cells, ECS Journal of Solid State Science and Technology, vol.5, issue.2, pp.68-73, 2016. ,
Relaxation of strained-layer semiconductor structures via plastic flow, Applied Physics Letters, vol.51, issue.17, pp.1325-1327, 1987. ,
Bulsara. Dislocation dynamics in relaxed graded composition semiconductors, Materials Science and Engineering: B, vol.67, issue.1, pp.53-61, 1999. ,
Metamorphic epitaxy for multijunction solar cells, MRS Bulletin, vol.41, issue.3, pp.202-209, 2016. ,
Application of InGaP/GaAs/InGaAs triple junction solar cells to space use and concentrator photovoltaic, Photovoltaic Specialist Conference (PVSC), pp.1-0005, 2014. ,
Design flexibility of ultrahigh efficiency four-junction inverted metamorphic solar cells, IEEE Journal of Photovoltaics, vol.6, issue.2, pp.578-583, 2016. ,
Solar cell efficiency tables (version 50), Progress in Photovoltaics: Research and Applications, vol.25, pp.668-676, 2017. ,
Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells, Journal of applied physics, vol.51, issue.8, pp.4494-4500, 1980. ,
Limiting efficiencies for photovoltaic energy conversion in multigap systems, Solar Energy Materials and Solar Cells, vol.43, issue.2, pp.203-222, 1996. ,
Analysis of tandem solar cell efficiencies under AM1.5G spectrum using a rapid flux calculation method, Progress in photovoltaics: Research and Applications, vol.16, pp.225-233, 2008. ,
Chapter 4 III-V multi-junction solar cells, Advanced concepts in photovoltaics, pp.87-117, 2014. ,
Towards an optimized all lattice-matched InAlAs/InGaAsP/InGaAs multijunction solar cell with efficiency 50%, Applied Physics Letters, vol.102, issue.3, p.33901, 2013. ,
, InP:S/AlInAs:C tunnel junction grown by MOVPE for photovoltaic applications. physica status solidi (a), vol.215, p.1700427, 2018.
URL : https://hal.archives-ouvertes.fr/hal-01797053
Energy-band structure: energy band gaps, 2009. ,
n-InAsSb/p-GaSb tunnel junctions with extremely low resistivity, Electronics Letters, vol.42, issue.7, pp.419-420, 2006. ,
27.6% conversion efficiency, a new record for single-junction solar cells under 1 sun illumination, Photovoltaic Specialists Conference (PVSC), pp.4-000008, 2011. ,
Systems and methods for advanced ultra-high-performance InP solar cells, National Renewable Energy Lab.(NREL), 2017. ,
GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell, Applied Physics Letters, vol.111, issue.23, p.231104, 2017. ,
Investigation of antimonide-based semiconductors for high-efficiency multi-junction solar cells, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC)(A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), pp.937-0942, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02052823
, Intro to CPV technology, opportunities and challenges, pp.2018-2022
, Best research-cell efficiencies chart, pp.2018-2021
Financial press release of may 21st, pp.2018-2021, 2015. ,
A bottom-up cost analysis of a high-concentration PV module, AIP Conference Proceedings, vol.1679, p.100001, 2015. ,
Fabrication of GaInP/GaAs//Si solar cells by surface activated direct wafer bonding, IEEE Journal of Photovoltaics, vol.3, issue.4, pp.1423-1428, 2013. ,
Fabrication of high-efficiency III-V on silicon multijunction solar cells by direct metal interconnect, IEEE Journal of Photovoltaics, vol.4, issue.4, pp.1149-1155, 2014. ,
Efficiency improvements in GaAs-on-Si solar cells, Proc. of 20th IEEE Photovoltaic Specialists Conference, pp.481-485, 1988. ,
Highefficiency concentrator cells from GaAs on Si, Conference Record of the Twenty Second IEEE, pp.353-357, 1991. ,
High quality GaAs on Si and its application to a solar cell, MRS Online Proceedings Library Archive, vol.144, 1988. ,
Investigations of high-performance GaAs solar cells grown on Ge-Si 1?x Ge x -Si substrates, IEEE Transactions on Electron Devices, vol.52, issue.6, pp.1055-1060, 2005. ,
Impact of dislocation densities on n+/p and p+/n junction GaAs diodes and solar cells on SiGe virtual substrates, Journal of applied physics, vol.98, issue.1, p.14502, 2005. ,
Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer, Solar Energy Materials and Solar Cells, vol.172, pp.140-144, 2017. ,
GaAsP solar cells on GaP/Si with low threading dislocation density, Applied Physics Letters, vol.109, issue.3, p.32107, 2016. ,
3%-efficient GaAsP solar cells on GaP/Si templates, ACS Energy Letters, vol.15, issue.8, pp.1911-1918, 2017. ,
1.54 µm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays, Electronics Letters, vol.43, issue.22, pp.1198-1199, 2007. ,
The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination, Nanotechnology, vol.20, issue.22, p.225201, 2009. ,
Room-temperature continuous-wave operation in the telecom wavelength range of GaSb-based lasers monolithically grown on Si, APL Photonics, vol.2, issue.6, p.61301, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01626979
Quantum cascade lasers grown on silicon, Scientific reports, vol.8, issue.1, p.7206, 2018. ,
URL : https://hal.archives-ouvertes.fr/hal-02078298
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate, Applied Physics Letters, vol.93, issue.7, p.71102, 2008. ,
Defect control during growth of highly mismatched (100)InAsGaAs-heterostructures, Journal of crystal growth, vol.146, issue.1-4, pp.368-373, 1995. ,
Misfit dislocations in (001) semiconductor heterostructures grown by epitaxy, Materials Science and Engineering: B, vol.67, issue.1-2, pp.62-69, 1999. ,
Initial growth stage of GaSb on Si(001) substrates with AlSb initiation layers, Journal of crystal growth, vol.283, issue.3-4, pp.297-302, 2005. ,
The effects of low temperature buffer layer on the growth of pure Ge on Si(001), Thin Solid Films, vol.518, issue.22, pp.6496-6499, 2010. ,
GaAs epitaxy on Si substrates: modern status of research and engineering, Physics-Uspekhi, vol.51, issue.5, pp.437-456, 2008. ,
Characterization of antimonide based material grown by molecular epitaxy on vicinal silicon substrates via a low temperature AlSb nucleation layer, Journal of Crystal Growth, vol.477, pp.65-71, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01755268
Molecular beam epitaxy fundamentals and current status, 2012. ,
Material fundamentals of molecular beam epitaxy, 2012. ,
Molecular beam epitaxy: application to key materials, 2012. ,
Molecular beam epitaxy: from research to mass production, 2012. ,
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb, Journal of Crystal Growth, vol.220, issue.4, pp.384-392, 2000. ,
Oscillations in the surface structure of Sn-doped GaAs during growth by MBE, Surface Science, vol.103, issue.1, pp.90-96, 1981. ,
X-ray metrology in semiconductor manufacturing, 2006. ,
Elements of X-ray diffraction, 2001. ,
Optical processes in semiconductors, Courier Corporation, 1975. ,
Thin-film optical filters, 2010. ,
OPAL 2: rapid optical simulation of silicon solar cells, Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE, pp.265-000271, 2012. ,
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV, Physical review B, vol.27, issue.2, p.985, 1983. ,
N-type doping of gallium antimonide and aluminum antimonide grown by molecular beam epitaxy using lead telluride as a tellurium dopant source, J. Electron. Mater, vol.17, issue.4, pp.297-303, 1988. ,
Empirical modeling of dopability in diamond-like semiconductors, npj Computational Materials, vol.4, issue.1, p.71, 2018. ,
An improved In-based ohmic contact to n-GaSb, Solid State Electronics, vol.48, pp.1667-1672, 2004. ,
Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb, Solid-State Electronics, vol.46, issue.10, pp.1627-1631, 2002. ,
Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, vol.13, pp.1-3, 1995. ,
A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters, Semiconductors, vol.45, issue.9, pp.1219-1226, 2011. ,
Over 35% efficient GaAs/GaSb stacked concentrator cell assemblies for terrestrial applications, Conference Record of the Twenty First IEEE, pp.190-195, 1990. ,
Solar cells based on gallium antimonide, Semiconductors, vol.43, issue.5, pp.668-671, 2009. ,
, Spectral-splitting concentrator photovoltaic modules based on AlGaAs/GaAs/GaSb and GaInP/InGaAs(P) solar cells, vol.58, pp.1034-1038, 2013.
Development of high-efficiency mechanically stacked GaInP/GaInAs-GaSb triple-junction concentrator solar cells, Conference Record, 17th European Solar Energy Conference, pp.84-87, 2001. ,
InGaP/GaAs-GaSb and InGaP/GaAs/Ge-InGaAsSb hybrid monolithic/stacked tandem concentrator solar cells, Proc. of 21st EUPVSEC, 2006. ,
Reducing threading dislocation density in GaSb photovoltaic devices on GaAs by using AlSb dislocation filtering layers, Solar Energy Materials and Solar Cells, vol.185, pp.21-27, 2018. ,
Modelling polycrystalline semiconductor solar cells, Thin Solid Films, vol.361, pp.527-532, 2000. ,
Parameter extraction from dark current-voltage characteristics of solar cells, South African Journal of Science, vol.104, issue.9, pp.401-404, 2008. ,
Pathways to 40%-efficient concentrator photovoltaics, Proc. 20th European Photovoltaic Solar Energy Conference, pp.10-11, 2005. ,
Energy bandgap and lattice constant contours of III-V quaternary alloys, Journal of Electronic Materials, vol.7, issue.1, pp.1-16, 1978. ,
Bandgap and lattice constant of GaInAsP as a function of alloy composition, Journal of Electronic Materials, vol.3, issue.3, pp.635-644, 1974. ,
MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs, Journal of crystal growth, vol.175, pp.844-848, 1997. ,
Mid-infrared multiple quantum wells lasers using digitally-grown AlInAsSb barriers and strained InAsSb wells, 2006. ,
Narrow band gap InGaSb, InAlAsSb alloys for electronic devices, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, vol.24, issue.3, pp.1622-1625, 2006. ,
Simulation of novel InAlAsSb solar cells, Proc. SPIE, vol.8256, p.82560, 2012. ,
AlInAsSb for M-LWIR detectors, Journal of Crystal Growth, vol.425, pp.357-359, 2015. ,
AlInAsSb/-GaSb staircase avalanche photodiode, Applied Physics Letters, vol.108, issue.8, p.81101, 2016. ,
Unstable regions in III-V quaternary solid solutions composition plane calculated with strictly regular solution approximation, Japanese Journal of Applied Physics, vol.21, issue.6, p.323, 1982. ,
Phase separation and defect formation in stable, metastable, and unstable GaInAsSb alloys for infrared applications, 2014. ,
Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary, Journal of crystal growth, vol.278, issue.1, pp.203-208, 2005. ,
,
, Al x In 1?x As y Sb 1?y alloys lattice matched to InAs(100) grown by molecular beam epitaxy, Journal of Crystal Growth, vol.425, pp.33-38, 2015.
Enhanced crystal quality of Al x In 1?x As y Sb 1?y for terahertz quantum cascade lasers, Photonics, vol.3, 2016. ,
Optical characterization of In 0.27 Ga 0.73 Sb and In x Al 1?x As y Sb 1?y epitaxial layers for development of 6.2-å-based heterojunction bipolar transistors, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, vol.24, issue.3, pp.1604-1606, 2006. ,
Al x In 1?x As1 ? ySb y /GaSb effective mass superlattices grown by molecular beam epitaxy, Journal of crystal growth, vol.201, pp.854-857, 1999. ,
Type I mid-infrared MQW lasers using AlInAsSb barriers and InAsSb wells, Proc. SPIE, vol.5722, p.307, 2005. ,
Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAs y Sb 1?y molecular-beam epitaxial layers, Journal of applied physics, vol.73, issue.12, pp.8227-8236, 1993. ,
Optical characterization of AlInAsSb digital alloy films, NNIN Research Accomplishments, pp.138-139, 2015. ,
, Broadly tunable AlInAsSb digital alloys grown on GaSb, vol.16, pp.3582-3586, 2016.
Charge separation and temperature-induced carrier migration in Ga 1?x In x N y As 1?y multiple quantum wells, Physical Review B, vol.84, issue.4, p.45302, 2011. ,
Rapid thermal annealing of InAlAsSb lattice-matched to InP for top cell applications, Photovoltaic Specialist Conference (PVSC), pp.1-4, 2015. ,
Effect of annealing on the compositional modulation of InAlAsSb, Applied Surface Science, vol.395, pp.105-109, 2017. ,
Atom-scale compositional distribution in InAlAsSb-based triple-junction solar cells by atom probe tomography, Nanotechnology, vol.27, issue.30, pp.305402-305402, 2016. ,
Influence of the growth temperature on the composition distribution at sub-nm scale of InAlAsSb for solar cells, Journal of Alloys and Compounds, 2018. ,
Digitally grown AlInAsSb for high gain separate absorption, grading, charge, and multiplication avalanche photodiodes, Journal of Crystal Growth, vol.482, pp.70-74, 2018. ,
Tunnel junctions for ohmic intra-device contacts on GaSb-substrates, Applied physics letters, vol.85, issue.12, pp.2388-2389, 2004. ,
Ultra-low resistive GaSb/InAs tunnel junctions, Semiconductor Science and Technology, vol.26, issue.7, p.75021, 2011. ,
Tunnel diode with broken-gap quantum well, p.357, 2016. ,
Interpolating semiconductor alloy parameters: Application to quaternary III-V band gaps, Journal of Applied Physics, vol.94, issue.9, pp.5814-5819, 2003. ,
Spectral response and I-V measurements of tandem amorphous-silicon alloy solar cells, Solar Cells, vol.18, issue.3-4, pp.301-314, 1986. ,
Spectral response measurements of monolithic GaInP/Ga(In)As/Ge triple-junction solar cells: measurement artifacts and their explanation, Progress in Photovoltaics: Research and Applications, vol.11, issue.8, pp.499-514, 2003. ,
Band parameters for III-V compound semiconductors and their alloys, Journal of applied physics, vol.89, issue.11, pp.5815-5875, 2001. ,
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates, Journal of applied physics, vol.93, issue.7, pp.3859-3865, 2003. ,
High resolution X-ray diffractometry and topography, 2005. ,
Control and elimination of nucleation-related defects in GaP/Si(001) heteroepitaxy, Applied Physics Letters, vol.94, issue.23, p.232106, 2009. ,
Equilibrium structures of Si(100) stepped surfaces, Physical review letters, vol.65, issue.17, p.2161, 1990. ,
Silicon surfaces and formation of interfaces: basic science in the industrial world, 2000. ,
Growth of single domain GaAs layer on (100)-oriented Si substrate by MOCVD, Japanese Journal of Applied Physics, vol.23, issue.11A, p.843, 1984. ,
Epitaxial lateral overgrowth of GaAs by LPE, Japanese journal of applied physics, vol.27, issue.6A, p.964, 1988. ,
Material properties of high-quality GaAs epitaxial layers grown on Si substrates, Journal of applied physics, vol.60, issue.5, pp.1640-1647, 1986. ,
Gallium arsenide and other compound semiconductors on silicon, Journal of Applied Physics, vol.68, issue.7, pp.31-58, 1990. ,
Molecularbeam epitaxy of GaSb/AlSb optical device layers on Si(100), Journal of applied physics, vol.59, issue.11, pp.3909-3911, 1986. ,
Molecular beam epitaxy of AlSb, Applied Physics Letters, vol.40, issue.11, pp.983-985, 1982. ,
GaSb/AlSb multiquantum well structures: molecular beam epitaxial growth and narrow-well photoluminescence, Applied physics letters, vol.43, issue.11, pp.1059-1061, 1983. ,
, Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films. physica status solidi (a), vol.75, pp.641-645, 1983.
Heteroepitaxial growth of GaSb on Si(001) substrates, Journal of crystal growth, vol.264, issue.1, pp.21-25, 2004. ,
Growth mode and structural characterization of GaSb on Si(001) substrate: a transmission electron microscopy study, Applied physics letters, vol.88, issue.24, p.241907, 2006. ,
Transmission electron microscopy study of the initial growth stage of GaSb grown on Si(001) substrate by molecular beam epitaxy method, Thin solid films, vol.518, issue.8, pp.2280-2284, 2010. ,
Growth mechanisms of highly mismatched AlSb on a Si substrate, Applied Physics Letters, vol.86, issue.3, p.34105, 2005. ,
High quality AlSb bulk material on Si substrates using a monolithic self-assembled quantum dot nucleation layer, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, vol.23, issue.3, pp.1010-1012, 2005. ,
Growth mechanisms of GaSb heteroepitaxial films on Si with an AlSb buffer layer, Journal of Applied Physics, vol.114, issue.11, p.113101, 2013. ,
X-ray diffraction study of GaSb grown by molecular beam epitaxy on silicon substrates, Journal of Crystal Growth, vol.439, pp.33-39, 2016. ,
URL : https://hal.archives-ouvertes.fr/hal-01626675
Comparison of direct growth and wafer bonding for the fabrication of GaInP/GaAs dual-junction solar cells on silicon, IEEE Journal of Photovoltaics, vol.4, issue.2, pp.620-625, 2014. ,
Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substrates, Applied Physics Letters, vol.50, issue.1, pp.31-33, 1987. ,
Analysis of strained-layer superlattice effects on dislocation density reduction in GaAs on Si substrates, Applied physics letters, vol.54, issue.1, pp.24-26, 1989. ,
Dislocation density reduction in heteroepitaxial III-V compound films on Si substrates for optical devices, Journal of Materials Research, vol.6, issue.2, pp.376-384, 1991. ,
Improvement of the MOCVD-grown InGaP-on-Si towards high-efficiency solar cell application. Solar energy materials and solar cells, vol.66, pp.593-598, 2001. ,
Optimized growth start and controlled formation of misfit dislocations for heteroepitaxial GaAs on (100)Si grown by migration-enhanced epitaxy, Journal of Crystal Growth, vol.95, issue.1-4, pp.87-90, 1989. ,
Optoelectronic device performance on reduced threading dislocation density GaAs/Si, Journal of Applied Physics, vol.89, issue.8, pp.4365-4375, 2001. ,
Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si, Journal of crystal growth, vol.115, issue.1-4, pp.122-127, 1991. ,
Growth of GaAs on Si by employing AlAs/GaAs double amorphous buffer, Journal of crystal growth, vol.128, issue.1-4, pp.521-526, 1993. ,
The forces exerted on dislocations and the stress fields produced by them, Physical Review, vol.80, issue.3, p.436, 1950. ,
Defects in epitaxial multilayers: I. Misfit dislocations, Journal of Crystal growth, vol.27, pp.118-125, 1974. ,
Transmission electron microscopy investigation of dislocation bending by GaAsP/GaAs strained-layer superlattices on heteroepitaxial GaAs/Si, Journal of applied physics, vol.68, issue.10, pp.5115-5118, 1990. ,
Self-organised quantum dots as dislocation filters: the case of GaAs-based lasers on silicon, Electronics Letters, vol.42, issue.2, 2006. ,
Dislocation density reduction in GaSb films grown on GaAs substrates by molecular beam epitaxy, Journal of the Electrochemical Society, vol.144, issue.4, pp.1430-1434, 1997. ,
Strong photoluminescence at 1.53 µm from GaSb/AlGaSb multiple quantum wells grown on Si substrate, Applied Physics Letters, vol.95, issue.6, p.61910, 2009. ,
Growth of low defect AlGaSb films on Si(100) using AlSb and InSb quantum dots intermediate layers, Journal of Crystal Growth, vol.323, issue.1, pp.405-408, 2011. ,
GaSb on Si: structural defects and their effect on surface morphology and electrical properties, MRS Online Proceedings Library Archive, vol.1635, pp.115-120, 2014. ,
Electrical properties related to growth defects in metamorphic GaSb films on Si, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.35, issue.1, p.11203, 2017. ,
III-V multijunction solar cell integration with silicon: present status, challenges and future outlook, Energy Harvesting and Systems, vol.1, issue.3-4, pp.121-145, 2014. ,
A review of recent progress in heterogeneous silicon tandem solar cells, Journal of Physics D: Applied Physics, vol.51, issue.13, p.133002, 2018. ,
Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage, IEEE Electron Device Letters, vol.27, issue.3, pp.142-144, 2006. ,
Current matched three-terminal dual junction GaAsP/SiGe tandem solar cell on si, Solar Energy Materials and Solar Cells, vol.146, pp.80-86, 2016. ,
MOCVD growth of high efficiency current-matched AlGaAs/Si tandem solar cell, Journal of crystal growth, vol.174, issue.1-4, pp.579-584, 1997. ,
GaAs 0.75 P 0.25 /Si dual-junction solar cells grown by MBE and MOCVD, IEEE Journal of Photovoltaics, vol.6, issue.1, pp.326-331, 2016. ,
Solar cell efficiency tables (version 53), Progress in Photovoltaics: Research and Applications, vol.27, pp.3-12, 2019. ,
Direct growth of III-V/Silicon triple-junction solar cells with 19.7% efficiency, IEEE Journal of Photovoltaics, issue.99, pp.1-6, 2018. ,
III-V/Si hybrid photonic devices by direct fusion bonding, Scientific reports, vol.2, p.349, 2012. ,
Quantitative secondary ion mass spectrometry analysis of SiO 2 desorption during in situ heat cleaning, Thin Solid Films, vol.321, issue.1-2, pp.148-152, 1998. ,
Silicon surface preparation for III-V molecular beam epitaxy, Journal of Crystal Growth, vol.413, issue.0, pp.17-24, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01626282
Handbook of optical constants of solids, 1985. ,
GaSb band structure and carrier concentration, pp.2018-2026 ,
Performance improvement of the GaSb thermophotovoltaic cells with n-type emitters, IEEE transactions on electron devices, vol.62, issue.9, pp.2809-2815, 2015. ,
Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications, Solar Energy Materials and Solar Cells, vol.95, issue.7, pp.1949-1954, 2011. ,
Influence of dislocations on photovoltaic properties of multicrystalline silicon solar cells, Journal de Physique III, vol.3, issue.10, pp.1941-1946, 1993. ,
URL : https://hal.archives-ouvertes.fr/jpa-00249056
GaSb thermophotovoltaic cells grown on GaAs by molecular beam epitaxy using interfacial misfit arrays, Applied Physics Letters, vol.106, issue.11, p.111101, 2015. ,
Efficiency calculations of thin-film GaAs solar cells on Si substrates, Journal of applied physics, vol.58, issue.9, pp.3601-3606, 1985. ,
Cascade tunnel diode incorporating InAs/GaSb broken gap interface for multi-junction solar cells, Photovoltaic Specialists Conference (PVSC), pp.252-000255, 2011. ,