Substrats innovants pour des composants de puissance à base de GaN

Abstract : New materials such as gallium nitride (GaN) emerge as promising candidates for power electronics. The current trend is to fabricate the AlGaN/GaN power devices directly on (111) silicon substrates. It makes the expitaxy of the GaN challenging and affects the device performances. In this work, we focus on substrate approaches to solve these problems. A transfer process was developed to replace the silicon substrate by another material to enhance electrical performances of the devices. Especially, GaN devices were transferred on copper substrates without electrical degradation. Electrical and thermal characterizations were performed to study the impact of the transfer. This work offers a first approach on the transfer of GaN devices from 8 or even 12 inches silicon substrates.
Keywords : Hemt Direct bonding
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Anthony Cibie. Substrats innovants pour des composants de puissance à base de GaN. Matériaux. Université Grenoble Alpes, 2019. Français. ⟨NNT : 2019GREAI014⟩. ⟨tel-02163166⟩

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