J. Fu, F. Fouquet, F. Cuvilly, M. Kadi, P. Dherbécourt et al., Evolution of C-V and I-V characteristics for a commercial 600V GaN GIT power device under repetitive short-circuit tests, IEEE Workshop on Wide Bandgap Power Devices and Applications in Aisa (Wipda -Aisa), vol.88, 2018.

J. Fu, F. Fouquet, M. Kadi, and P. Dherbécourt, Experimental study of 600V GaN transistor under the short-circuit aging tests, 19th IEEE Mediterranean Electrotechnical Conference (Melecon), 2018.

J. Fu, F. Fouquet, M. Kadi, and P. Dherbécourt, Etude experimentale sur le régime de court-circuit pour un 600V GaN transistor, Telecom'2017&10 ème JFMMA Conference, 2017.

S. J. Pearton and F. Ren, Adv. Mater, vol.12, issue.21, pp.1571-1580, 2000.

A. Lidow, J. Strydom, M. De-rooij, and D. Reusch, GaN Transistors for Efficiency Power Conversion, 2014.

H. Qin, B. Zhao, X. Nie, J. Wen, and Y. Yan, Overview of SiC power devices and its applications in power electronic converters, IEEE 8th Conference on Industrial Electronics and Applications (ICIEA), 2013.

, Quadrennial Technology Review 2015 -Wide Bandgap Semiconductors for Power Electronics -Technology Assessments, 2015.

. Epc, , 2016.

S. Mbarek, Fiabilité et analyse physique des défaillances des composants électroniques sous contraintes électrothermiques pour des applications en mécatronique, 2017.

O. Dhouha, Etude d'interupteur en carbure de silicium et potentiel d'utilisation dans des applications aéronautiques, 2015.

S. Bouzid-driad, Réalisation et caractérisation de transistors HEMTs GaN pour des applications dans le domaine millimétrique'', thèse de doctorat, 2013.

J. Lehmann, Caractérisation électrique d'hétérostructures AlGaN/GaN pour des applications de puissance'', thèse de doctorat, 2015.

F. A. Marino, N. Faralli, D. K. Ferry, S. M. Goodnick, and M. Saraniti, Figures of merit in high-frequency and high-power GaN HEMTs, Journal of Physics : Conference Series, vol.193, issue.7, p.12040, 2009.

R. S. Pengelly, S. M. Wood, J. W. Milligan, S. T. Sheppard, and W. L. Pribble, A review of GaN on SiC high electron mobility power transistors and MMICs, IEEE Transactions on Microwave Theory and Techniques, 2012.

K. J. Chen, O. Haberlen, A. Lidow, C. L. Tsai, T. Ueda et al., GaN-on-Si power technology : devices and applications, IEEE Transactions on Electron Devices, 2017.
DOI : 10.1109/ted.2017.2657579

H. Okumura, Present status and future prospect of widegap semiconductor high-power devices, Japanese Journal of Applied Physics, 2006.

T. D. Nguyen, Réalisation et caractérisation de HEMTs AlGaN/GaN sur silicium pour applications à haute tension, 2014.

H. Schulz and K. H. Thiemann, Crystal structure refinement of Al and Ga, Solid State Communications, vol.23, p.815, 1977.

O. Ambacher, Two dimensional selectron gases induced by spontaneous and piezoelectric polarization charges in N-and G-face AlGaN/GaN heterostructures, J.appl.ohys, vol.85, pp.3222-3232, 1999.

J. Smart, A. T. Schremer, N. C. Weimann, O. Ambacher, L. F. Eastman et al., AlGaN/GaN heterostructures on insulating AlGaN nucleation layers, Appl. Phys. Lett, vol.75, p.388, 1999.
DOI : 10.1063/1.124384

M. Khan, J. N. Kuznia, D. T. Olson, W. J. Schaff, J. W. Burm et al., Microwave performance of a 0.25 um gate AlGaN/GaN heterostructure field effect transistor, Applied Physics Letters, vol.65, issue.9, pp.1121-1123, 1994.

M. Meneghini, G. Meneghesso, and E. Zanoni, Power GaN Devices Materials'', Applications and Reliability, 2017.

M. Avcu, Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3?, 2014.

H. Amano and L. Akasaki, Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate, Thin Solid Films, vol.163, 1988.

G. Purvis, AZZURRO provides GaN-on-Si wafers for 1KV device, III-Vs Review, vol.19, issue.5, 2006.
DOI : 10.1016/s0961-1290(06)71712-4

URL : https://doi.org/10.1016/s0961-1290(06)71712-4

S. Rajan, P. Waltereit, C. S. Poblenz, . D. Heikman, J. S. Green et al., Power performance of AlGaN-GaN HEMTs grown on SiC by plasmaassisted MBE'', IEEE Electron Device Letters, 2004.

S. Khandelwal and N. Goyal, A physics-based analytical model for 2DEG charge density in AlGaN/GaN HEMT devices, IEEE Transactions on Electron Devices, 2011.

M. Miyoshi, T. Egawa, and H. Ishikawa, Study on mobility enhancement in MOVPEgrown AlGaN/GaN HEMT structures using a thin AlN interfacial layer, Solid-State Elec-tronics, vol.50, pp.1515-1521, 2006.
DOI : 10.1016/j.sse.2006.07.016

I. Smorchkova, L. Chen, T. Mates, L. Shen, S. Heikman et al., AlN/GaN twodimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.90, p.5196, 2001.
DOI : 10.1063/1.1412273

Z. Ouarch, Caractérisation et modélisation des effets de pièges et thermiques des transistors à effet de champ sur AsGa: Application à la simulation de la dynamique lente des circuits non linéaires micro-ondes, 1995.

C. Lagarde, Modélisation de transistor de puissance en technologie GaN : Conception d'un amplificateur de type doherty pour les émetteurs à puissance adaptative, 2006.

W. Mickanin, P. Canfield, E. Finchem, and B. Odekirk, Frequency-dependent transients in GaAs MESFETs: Process, geometry, and material effects, GaAs IC Symp. Dig, pp.211-214, 1989.

P. B. Klein, S. C. Binari, K. Ikossi-anastasiou, A. E. Wickenden, D. D. Koleske et al.,

, AlGaN/GaN high electron mobility transistors, Electronics Letters, vol.37, p.661, 2001.

S. Yang, C. Zhou, Q. Jiang, J. Lu, and B. Huang, Investigation of buffer traps in AlGaN/GaN on Si deivces by thermally stimulated current spectroscopy and backgating measurement, Journal of Applied Physics, 2014.

G. Callet, Caractérisation et modélisation de transistors HEMT AlGaN/GaN et InAIN/GaN pour l'amplification de puissance en radio-fréquence'', thèse de doctorat, Déc, 2011.

C. Charbonniaud, Caractérisation et modélisation électrothermique non linéaire de transistors à effet de champ GaN pour l'amplification de puissance microonde'', thèse de doctorat, 2005.

U. K. Mishra, AlGaN/GaN transistors for power electronics, Electron Devices Meeting(IEDM), vol.77, p.29

W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, A comparative study of surface passivation on AlGaN/GaN HEMTs, Solid-State Electronics, vol.46, pp.1441-1444, 2002.

T. Kikkawa, K. Makiyama, T. Ohki, M. Kanamura, K. Imanishi et al., High performance and high reliability AlGaN/GaN HEMTs," physica status solidi (a), vol.206, pp.1135-1144, 2009.

M. Microvic, High frequency GaN HEMTs for RF MMIC applications, IEEE Internaitional Electron Devices Meeting, 2016.

K. Yuk, G. R. Branner, and C. Cui, Future directions for GaN in 5G and satellite communications", circuits and Systems (MWSCAS) 2017 IEEE 60th International Midwest Symposium on, pp.803-806, 2017.

D. Marcon, GaN-on-Si HEMTs for 50V RF applications, European Microwave Intergrated Circuit Conference, 2012.

D. Bortis, O. Knecht, D. Neumayr, and J. W. Kolar, Comprehensive Evaluation of GaN GIT in Low-and High-Frequency Bridge Leg Applications, IEEE, vol.8, 2016.

X. Huang, Z. Liu, Q. Li, and F. Lee, Evaluation and application of 600V GaN HEMT in Cascode Structure, p.2013

D. Jung, Design and evaluation of cascode GaN FET for switching power conversion systems, Journal ETRI, 2017.

A. Lidow, J. Michael-de-rooij, D. Strydom, and . Reusch, GaN Transistors for Efficient Power Conversion, APEC 2013 educational seminar S7, p.16

T. Mcdonald, GaN based power conversion: moving on!, presented at the IEEE Applied Power Electronics Conference and Exposition, 2013.

. Microgangmbh, MGG1T0617D-CO MicroGaN 600-V N-off switch, 2015.

R. Chu, A. Corrion, M. Chen, R. Li, D. Wong et al., 1200-V normally off GaN-on-Si field-effect transistors with low dynamic on-resistance, IEEE Electron Device Letters, vol.32, issue.5, pp.632-634, 2011.

Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, High-performance enhancement-mode AlGaN/GaN HEMTs using Flouride-based plasma treatment, IEEE Electron Device Lett, vol.26, issue.7, pp.435-437, 2005.

R. Chu, B. Hughes, M. Chen, D. Brown, R. Li et al., Normally-Off GaN-on-Si transistors enabling nanosecond power switching at one kilowatt, 71st Annual Device Research Conference, pp.199-200, 2013.
DOI : 10.1109/drc.2013.6633862

T. Kachi, GaN power devices for automotive applications, Proc. IEEE Compound Semicond. IC Symp. Tech. Dig, pp.13-16, 2007.

T. Imada, M. Kanamura, and T. Kikkawa, Enhancement-mode GaN MISHEMTs for power supplies, The 2010 International Power Electronics Conference -ECCE ASIA, pp.1027-1033, 2010.

T. Oka and T. Nozawa, AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications, IEEE Electron Device Letters, vol.29, issue.7, pp.668-670, 2008.

P. Moens, An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric, IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.374-377, 2014.

E. Power-conversion, EPC-2010 enhancement mode power transistor, 2013.

. Panasonic, 600V GaN power transistor, IEEE Applied Power Electronics Conference and Exposition, 2013.

Y. Uemoto, H. Ishida, and T. Tanaka, Gate Injection Transistor (GIT) -A Normally-off AlGaN/GaN Power Transistor Using Conductivity Modulation, IEEE Transactions on Electron Devices, vol.54, issue.12, 2007.
DOI : 10.1109/ted.2007.908601

S. Kaneko, Current-collapse-free operations up to 850 V by GaNGIT utilizing hole injection from drain, IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.41-44, 2015.
DOI : 10.1109/ispsd.2015.7123384

T. Mizutani, Y. Ohno, M. Akita, S. Kishimoto, and K. Maezawa, A study on current collapse in AlGaN/GaN HEMTs induced by bias stress, IEEE Transactions on Electron Devices, 2003.

M. Megeghini, O. Hilt, J. Wuerfl, and G. Meneghesso, Technology and Reliability of normally-off GaN HEMT with p-type gate, 2017.

E. Acurio, F. Crupi, P. Magnone, L. Trojman, G. Meneghesso et al., On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT, Solid-State Electronics, vol.132, pp.49-56, 2017.

T. Wu, Forward bias gate breakdown mechanism in enhancementmode p-GaN gate AlGaN/GaN high electron mobility transistor (HEMTs)'', IEEE Electron device letters, 2015.

E. Zanoni, F. Danesin, M. Meneghini, A. Cetronio, C. Lanzieri et al., Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing, IEEE Electron Device Lett, vol.30, pp.427-429, 2009.

M. Meneghini, I. Rossetto, V. Rizzato, S. Stoffels, M. Van-hove et al., Gate Stability of GaNBased HEMTs with P-Type Gate, 2016.

M. Meneghini, C. Santi, T. Ueda, T. Tanaka, D. Ueda et al., Time-and Field-Dependent Trapping in GaN-Based EnhancementMode Transistors With p-Gate, IEEE Electron Devices Letters, vol.33, pp.375-377, 2012.

K. Tanaka, Reliability of Hybrid-Drain-embedded gate injection transistor'', IEEE International reliability physics symposium, p.2017
DOI : 10.1109/irps.2017.7936308

R. Mousa, Caractérisation, modélisation et intégration de JFET de puissance en carbure de silicium dans des convertisseurs haute température et haute tension '', thèse de doctorat, 2009.

G. Callet, A new nonlinear HEMT model for AlGaN/GaN switch applications'', International journal of microwave and wireless technologies, vol.2, pp.283-291, 2010.

R. Ouaida, Vieillissement et mécanismes de dégradation sur des composants de puissance en carburant de silicium (SiC) pour des applications haute température, 2014.

A. E. Duarte, Etude de la fiabilité des transistors HEMT AlGaN/GaN de puissance en condition opérationnelle'', thèse de doctorat, 2018.

W. Jatal, U. Baumann, K. Tonisch, F. Schwierz, and J. Pezoldt, High frequency performance of GaN high electron mobility transistors on 3C-SiC/Si substrates with Au-Free ohmic contacts, 2013.
DOI : 10.1109/led.2014.2379664

A. Soltani, High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping, Applied Physic Letters, vol.104, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01009966

X. Liao, Investigation of high-temperature-reverse-bias (HTRB) degradation on AlGaN/GaN HEMTs, IEEE International Conference on Electron Devices and Solide-State Circuits, 2014.

, Novel GIT Structure Solves Current Collapse In GaN Power HEMTs

M. Rzin, Schottky gate AlGaN/GaN HEMTs : Investigation with DC and low frequency noise measurements after 7000 hours HTOL test, International Conference on Noise and Fluctuations (ICNF), 2015.
DOI : 10.1109/icnf.2015.7288607

URL : https://hal.archives-ouvertes.fr/hal-01163601

A. Sozza, C. Dua, E. Morvan, B. Grimber, and S. L. Delage, A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications, Microelectronics Reliability, vol.45, pp.9-11, 2005.

, Stress-Test-Driven Qualification of Integrated Circuits, JEDEC Solid State Technology Association. JEDEC Standard, vol.47, p.2012, 2011.

X. Huang, Experimental study of 650V AlGaN/GaN HEMT short-circuit safe operating area (SCSOA), IEEE International Symposium on Power Semiconductor Devices&IC's, 2014.

C. Abbate, F. Iannuzzo, and G. Busatto, Thermal instability during short-circuit of normally-off AlGaN/GaN HFETs'', Microelectronics Reliability, 2013.
DOI : 10.1016/j.microrel.2013.07.119

M. Landel, C. Gautier, D. Labrousse, and S. Lefebvre, Experimental study of the short-circuit robustness of 600V E-mode GaN transistors, Microelectronics reliability, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01700440

P. J. Martinez, Unstable behaviour of normally-off GaN E-HEMT under short-circuit'', Semiconductor Science and Technology, 2018.

A. Castellazzi, A. Fayyaz, S. Zhu, T. Oeder, and M. Pfost, Single pulse shortcircuit robustness and repetitive stress aging of GaN GITs, IEEE Reliability Physics Symposium (IRPS), 2018.
DOI : 10.1109/irps.2018.8353593

S. Mbarek, F. Fouquet, P. Dherbecourt, M. Masmoudi, and O. Latry, Gate oxide degradation of SiC MOSFET under short-circuit aging tests, Microelectronics Reliability, vol.64, pp.415-418, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01954256

D. Bortis, Comprehensive evaluation of GaN GIT in low and high frequency bridge leg applications'', the 8th International Power Electronics and Motion Control Conference, 2016.

C. Chen, Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs'', Microelectronics Reliability, 2015.

K. Tanaka, T. Morita, M. Ishida, T. Hatsuda, T. Ueda et al., Reliability of hybrid-drainembedded gate injection transistor, IEEE Reliability physics symposium (IRPS), 2017.
DOI : 10.1109/irps.2017.7936308

D. Othman, Etude de la robustesse de transistors MOSFET SiC pour des applications aéronautiques, Journées JCGE'2014 -SEEDS, 2014.

S. Song, Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test'', Microelectronics Reliability, 2017.

D. Mari, M. Bernardoni, and G. Sozzi, A physical large-signal model for GaN HEMTs including selfheating and trap-related dispersion, Microelectronic Reliability, vol.51, pp.229-234, 2011.
DOI : 10.1016/j.microrel.2010.09.025

A. Jarndal, Large-signal model for AlGaN/GaN HEMTs suitable for RF switching-mode power amplifiers design, Solid State Electron, vol.54, pp.696-700, 2010.
DOI : 10.1016/j.endend.2010.06.032

L. Sang, Y. Xu, R. Cao, Y. Chen, Y. Guo et al., Modeling of GaN HEMT by using an improved k-nearest neighbors algorithm, J Electromagn Waves Appl, vol.25, pp.949-959, 2011.
DOI : 10.1163/156939311795254019

T. J. Brazil, A universal large-signal equivalent circuit model for GaAs MESFET, Proc. 21st EuMC, pp.921-926, 1991.
DOI : 10.1109/euma.1991.336464

I. Kallfass, C. Schick, T. J. Schumacher, and . Brazil, A universal large-signal model for hetero field effect transistors, Proc. 12th GaAs Symposium, European Microwave Week, 2004.

C. Teyssandier, Contribution à la modélisation non-linéaire de transistors de puissance HEMT Pseudomorphiques sur substrat AsGa : Analyse des effets parasites'', thèse de doctorat, 2008.

G. Callet, A new nonlinear HEMT model for AlGaN/GaN switch applications'', International Journal of Microwave and Wireless Technologies, 2010.

O. Jardel, F. De-groote, T. Reveyrand, J. C. Jacquet, C. Charbonniaud et al., An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR, IEEE Transactions on Microwave Theory and Techniques, vol.55, pp.2660-2669, 2007.
URL : https://hal.archives-ouvertes.fr/hal-00198570

K. Levenberg, A Method for the Solution of Certain Non-Linear Problems in Least Squares, Quarterly of Applied Mathematics, vol.2, pp.164-168, 1944.

D. Marquardt, An Algorithm for Least-Squares Estimation of Nonlinear Parameters, SIAM Journal on Applied Mathematics, vol.11, issue.2, pp.431-441, 1963.

J. B. Bernstein, M. Gurfinkel, X. Li, J. Walters, Y. Shapira et al., Electronic circuit reliability modeling'', Microelectronics reliability, 2005.
DOI : 10.1016/j.microrel.2005.12.004

K. Sutaria, Modeling and simulation tools for aging effects in scaled CMOS design, 2014.

A. Feinberg, P. Ersland, V. Kapar, and A. Widom, Parametric degradation in transistors, IEEE Annual reliability and maintainability symposium, Proceedings, 2005.