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Mise en oeuvre de moyens de vieillissement accéléré et d'analyses dédiés aux composants de puissance grand gap.

Abstract : This thesis constitute one of the elements of the EMOCAVI research project (Evolution of the Large gAp Power Component Models during the VIeillissement). It deals with the study of the reliability of Gallium Nitride (GaN) power transistors which are recently appeared on the market. This work focuses on the realization of a methodology to parameterize the model of GaN GIT component (Gate Injection Transistor) according to the aging to which it has been subjected. To achieve this goal, it will be necessary to go through several steps. The first step was dedicated to the definition, implementation and validation of an aging bench for the component and the characterization of these components before and during aging. A low power repetitive short-circuit aging test bench was designed and implemented. This bench is used to validate the energy-related aging hypothesis, to identify its determining level from a point of view of the reliability of the component and finally to highlight the progressive degradation of the component in order to identify the parameters of the transistor which are the most sensitive to aging. The second step of our work was devoted to the establishment of a methodology to create the aging model for the GaN-GIT component. By reproducing the COBRA model presented in the literature, we have succeeded in our work in proposing an innovative approach to integrate the dependencies in temperature and energy suffered by the component during stress (the Tsc pulse duration and the number of pulse suffered Nsc). The last step of our work was dedicated to the physical failure analysis in order to confirm the hypothesis made on the degradation mechanisms obtained after aging of the component. To carry out these analyzes, we started with the de-capsulation of the component by combining the laser cutting with the chemical attacks of the resin constituting the packaging. Once the defect was localized by photoluminescence, an in-depth analysis by SEM scanning and then PFIB (Plasma Focused Ion Beam) scans was performed to determine the mechanism of failure. These were mainly cracks in the Al metal at the drain and the presence of cavities in the metal layer which is used to make the Ohmic contact at the source, which explains the increase in resistance RDSON.
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Submitted on : Saturday, June 22, 2019 - 1:02:39 AM
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  • HAL Id : tel-02162634, version 1


Jian Zhi Fu. Mise en oeuvre de moyens de vieillissement accéléré et d'analyses dédiés aux composants de puissance grand gap.. Energie électrique. Normandie Université, 2018. Français. ⟨NNT : 2018NORMR075⟩. ⟨tel-02162634⟩



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