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, logiciel de traitement de données et d'ajustement de courbe non linéaire

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I. V. Chapitre, Propriétés des NCx de Si 1-x Ge

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H. K. Shin, D. J. Lockwood, and J. M. Baribeau, Solid State Commun, vol.114, p.505, 2000.

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V. Chapitre, Propriétés des NCx de Si 1-x Ge x dopés enfouis SiO

, Si en présence de Ge (Si-Ge*)

, Les résultats obtenus dans ce cas sont en accord avec les compositions des NCx trouvés par DRX. De plus, ils indiquent que les NCx dopés formés par la co-implantation de

, Dans cette partie nous étudions l'effet de la présence des dopants sur les propriétés de capacité MOS incluant des NCx de Si1-xGex. Avant d'étudier l'effet de l'influence des dopants, nous avons analysé les échantillons non dopés afin d'avoir des références pour les courbes C(V). Pour cela, des caractérisations C(V) ont été effectuées sur des structures MOS

, Une hystérésis est observée dans la zone de déplétion pour les oxydes implantés avec la dose D2 (recuit et le non recuit), tandis que le SiO2 non implanté ne présente pas

. Références,

K. Toshikiyo, S. Mtokunaga, . Takeoka, S. Mujii, . Hayashi et al., Low-dimensional Systems and Nanostructures, vol.13, pp.1034-1037, 2002.

D. J. Rowe and U. R. Kortshagen, Boron-and phosphorus-doped silicon germanium alloy nanocrystals Nonthermal plasma synthesis and gas-phase thin film deposition, APL Materials, vol.2, p.22104, 2014.

C. Barreteau, B. Michon, C. Besnard, and E. Giannini, High-pressure melt growth and transport properties of SiP, SiAs, GeP, and GeAs 2D layered semiconductors, J. Crystal Growth, p.75, 2016.
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D. J. Lockwood and J. Baribeau, Characterization of strain and epitaxial quality in Si/Ge heterostructures, Light Scattering from Semiconductor Structures and Super lattices, p.197, 1991.

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, Conférences internationales avec comité de lecture

A. Chelouche, M. Sow, G. Ferblantier, D. Muller, and D. Mathiot, Electrical Properties of Doped Si1-xGex nanocrystal embedded in SiO2, E-MRS Spring Meeting, Symp. R: Nanoparticles in dielectric matrix: From synthesis to device, applications for photonics, elctronics, and biosensing, 2017.

A. Chelouche, G. Schmerber, G. Ferblantier, D. Muller, and D. Mathiot, Ion beam synthesis of alloyed Si1-xGex nanocrystals embedded in SiO2, 20th Intern. Conf. on Ion Beam Modification of Materials (IBMM 2016), 2016.

, Communications et publications diverses

A. Chelouche, G. Schmerber, G. Ferblantier, D. Muller, and D. Mathiot, Synthèse de nanoparticules d'alliages Si 1-x Ge x dans une matrice de SiO 2 par implantation ionique, 2016.