Croissance et caractérisation de nano-cristaux fonctionnels de Si1-xGex éventuellement dopés dans diverses matrices diélectriques

Abstract : Semiconductor nanostructures based on silicon and germanium have attracted enormous interest in the last years because of their potential applications in nanoelectronics and optoelectronics. In order to fabricate high performance devices with Si1-xGex nanocrystals, it is required to know and control their structural and electrical properties which is the aim of our study. For that, we used the ionic co-implantation of Si and Ge of different fluences in SiO2 matrices to synthesize the Si1-xGex NCx. Matrix effect on the properties of Si1-xGex NCx, have been also studied by the implantation of Ge in Si-rich SiOxNy thin films prepared by PECVD. Finally, the effect of the presence of dopants on the structural and electrical properties of Si1-xGex NCx has been studied by the co-implantation of dopants with Si and Ge in SiO2. The formation of NCx is induced by thermal annealing at 1000 or 1100 °C after the implantation of the desired elements (Si, Ge and possibly the dopant).
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Abdellatif Chelouche. Croissance et caractérisation de nano-cristaux fonctionnels de Si1-xGex éventuellement dopés dans diverses matrices diélectriques. Micro et nanotechnologies/Microélectronique. Université de Strasbourg, 2018. Français. ⟨NNT : 2018STRAD019⟩. ⟨tel-02159414⟩

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