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, Alors que la mobilité électronique de l'InAs est intéressante pour les nanoélectroniques; l'aspect isolant topologique du Bi 1-x Sb x peut être utilisé pour la réalisation de Qubits basés sur les fermions de Majorana. Dans les deux cas, l'amélioration de la qualité du matériau est obligatoire et ceci est l'objectif principal cette thèse où nous étudions l'intégration des nanofils InAs sur silicium (compatibles CMOS) et où nous développons un nouvel, Grâce à leur propriétés uniques, les nanofils d'InAs et de Bi 1-x Sb x sont important pour les domaines de la nanoélectronique et de l'informatique quantique

L. Pour-une-compatibilité-cmos-complète and . Croissance, InAs sur Silicium nécessite d'être autocatalysée, entièrement verticale et uniforme sans dépasser la limite thermique de 450 ° C. Ces normes CMOS, combinées à la différence de paramètre de maille entre l'InAs et le silicium, ont empêché l'intégration de nanofils InAs pour les dispositifs nanoélectroniques. Dans cette thèse, du mécanisme Vapor-Solid (VS) au mécanisme VaporLiquid-Solid (VLS) est rapporté, Les rapports d'aspect très élevé des nanofils d'InAs

L. D&apos;autre-part and . Bi,

. Dans, peut héberger les fermions de Majorana utilisés comme Qubits. Cependant, la composition du Bi 1-x Sb x doit être comprise entre 0,08 et 0,24 pour que le matériau se comporte comme un isolant topologique. Nous rapportons pour la première fois la croissance de nanofils Bi 1-x Sb x sans défaut et à composition contrôlée sur Si. Différentes morphologies sont obtenues, y compris des nanofils, des nanorubans et des nanoflakes. Leur diamètre peut être de 20 nm pour plus de 10 microns de long, ce qui en fait des candidats idéaux pour des dispositifs quantiques