US Patent 233,445. 1880 (cit, p.1 ,
, IEA". Key World Energy Statistics, 2016.
Power electronics: circuits, devices, and applications. Pearson Education India, 2009. ,
The transistor, a semi-conductor triode, Physical Review, vol.74, p.1, 1948. ,
Inventors-Electric Cars (1890-1930), In: Inventors. about. com. Retrieved, issue.2, p.1226, 2010. ,
GM electric vehicle technology, INTERNATIONAL SYMPOSIUM ON AUTOMOTIVE TECHNOLOGY, 1991. ,
, Auto Companies On Fuel Cells. In: Fuel Cells, p.3, 2000.
Hydrogen bus launched on London tourist route, The Guardian, p.3, 2010. ,
Advanced SiC and GaN power electronics for automotive systems, p.3, 2010. ,
The electric interurban railways in America, p.3, 2000. ,
1879 Siemens presents the world's rst electric railway with an external power source, p.3 ,
Electric Railways: 1880-1990. 31. Iet, 2003 (cit, p.3 ,
How Electric Locomotives (Electric Trains) Work?, p.4, 2014. ,
Wide Band Gap Power Semiconductor Devices and their Applications, p.3, 2015. ,
Future Railway Traction Drives based on SiC technology, Nuremberg: ECPE SiC & GaN User Forum, vol.4, 2017. ,
Réseaux de bord électriques en aéronautique, Lille: Journées Electrotechnique du club EEA, 2009. ,
, The More Electric Aircraft: Why Aerospace Needs Power Electronics? In: Barcelona: 13th European Conference on Power Electronics and Aplications, 2009.
787 No-Bleed Systems: Saving Fuel and Enhancing Operational Eciencies, 2007. ,
Optimizing the weight of an aircraft power supply system through a+/-270 VDC main voltage, Gen, vol.360, p.5, 2012. ,
History of semiconductors, In: Journal of Telecommunications and information technology, issue.7, p.39, 2010. ,
Fundamentals of Power Semiconductor Devices, vol.27, p.42, 2008. ,
State of the art of high temperature power electronics, Materials Science and Engineering: B, vol.176, issue.7, p.283288, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00413349
Undersökning af några mineralier, vol.8, p.1824 ,
Production of Artical Crystalline Carbonaceous Materials. 1895 (cit, vol.8 ,
Properties of Advanced Semiconductor Materials, vol.8, 2001. ,
Sublimation process for manufacturing Silicon Carbide crystals, US Pat, vol.2, 1958. ,
Fused junctions in silicon carbide. US Patent 2,937, vol.323, 1960. ,
Silicon carbide rectier. US Patent 2,937, vol.324, 1960. ,
Silicon carbide semiconductor devices and method of preparation thereof. US Patent 2,918, vol.396, 1959. ,
Silicon carbide semiconductor device, US Patent, vol.3, 1964. ,
Handbook of Refractory Carbides and Nitrides, Handb. Refract. Carbides Nitrides, vol.8, 1996. ,
Synthèse de nanostructures de carbure de silicium et étude de leurs propriétés optiques, vol.8, 2008. ,
Articially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties, Physics reports, vol.379, p.149255, 2003. ,
Studies on silicon carbide, American Mineralogist, vol.32, p.6482, 1947. ,
SiC Semiconductor Devices Technology, Modeling, and Simulation, p.9, 2004. ,
6H-silicon carbide devices and applications, Phys. B Phys. Condens. Matter, vol.185, issue.93, p.90278, 1993. ,
Silicon carbide LED, Semiconductor Physics Quantum Electronics & Optoelectronics, vol.8, 2002. ,
Progress in 3C-SiC growth and novel applications, Materials Science Forum, vol.711, p.310, 2012. ,
Principles of semiconductor devices, vol.43, p.13, 2004. ,
Electrothermal simulation of 4H-SiC power devices, Materials science forum, vol.264, p.14, 1998. ,
Ionization rates for electrons and holes in silicon, physical review, vol.109, p.15, 1958. ,
Uniform Silicon p-n Junctions. II. Ionization Rates for Electrons, Journal of Applied Physics, vol.31, p.15, 1960. ,
Remarques sur une équation qui se présente dans la théorie des attractions des sphéroïdes, In: Soc. Phil. Paris, vol.3, p.15, 1813. ,
Physical limitations on frequency and power parameters of transistors, IRE International Convention Record, vol.13, p.2734, 1958. ,
Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices, Diamond and Related Materials, vol.19, p.20, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-02186368
Figure of merit for semiconductors for high-speed switches, Proceedings of the IEEE 60, vol.2, 1972. ,
Power semiconductor device gure of merit for high-frequency applications, IEEE Electron Device Letters, vol.10, pp.741-3106, 1989. ,
SiC market and industry update, In: Int. SiC Power Electron. Appl. Workshop, p.20, 2011. ,
Wide bandgap compound semiconductors for superior high-voltage unipolar power devices, IEEE Transactions on Electron Devices, vol.41, p.21, 1994. ,
Chloride-based SiC epitaxial growth toward low temperature bulk growth, Crystal Growth & Design, vol.10, p.21, 2010. ,
Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy, Journal of electronic materials, vol.27, p.21, 1998. ,
In: Power Semiconductor Devices and IC's, 1997. ISPSD'97, IEEE International Symposium on. IEEE, p.21, 1997. ,
Reliability and performance limitations in SiC power devices, In: Microelectronics reliability, vol.46, issue.5, p.2125, 2006. ,
Status on WBG Materials, ECPE SiC and GaN User Forum ,
, , 2017.
Stacking faults created by the combined deection of threading dislocations of Burgers vector c and c+ a during the physical vapor transport growth of 4HSiC, Applied Physics Letters, vol.98, p.22, 2011. ,
Glide of threading edge dislocations after basal plane dislocation conversion during 4HSiC epitaxial growth, Journal of Crystal Growth, vol.418, p.22, 2015. ,
Caractérisation et modélisaton de diodes Schottky et JBS SiC-4H pour des applications haute tension, vol.23, p.22, 2016. ,
Inuence of epitaxial growth and substrate-induced defects on the breakdown of 4HSiC Schottky diodes, Applied Physics Letters, vol.76, p.22, 2000. ,
Electrical impact of SiC structural crystal defects on high electric eld devices, Material Science Forum, vol.338, p.22, 2000. ,
High Voltage 4H-SiC Schottky Barrier Diodes Fabricated on (0388) with Closed Micropipes, Japanese journal of applied physics, vol.42, p.22, 2003. ,
Heterojunctions and superlattices based on silicon carbide, Semiconductor science and technology, vol.21, p.23, 2006. ,
Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes, Materials Science Forum, vol.353, p.24, 2001. ,
Impact of Stacking Fault on the IV Characteristics of 4H-SiC Schottky Barrier Diode, Materials Science Forum, vol.821, p.24, 2015. ,
Characterization of in-grown stacking faults in 4HSiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes, Applied Physics Letters, vol.87, p.24, 2005. ,
Investigation of Stacking Faults Aecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation, Materials Science Forum, vol.778, p.24, 2014. ,
, Inuence of stacking faults on the performance of 4HSiC Schottky barrier diodes fabricated on (1120) face. In: Applied physics letters, vol.81, p.24, 2002.
Investigation of growth processes of ingots of silicon carbide single crystals, Journal of crystal growth, vol.43, p.25, 1978. ,
Implementation of high voltage Silicon Carbide rectiers and switches, vol.26, p.25, 2012. ,
High Quality 150mm SiC Substrates for Power Electronics Applications, Power Electronics Europe, vol.4, p.25, 2016. ,
Control en modo deslizante aplicado a sistemas de acondicionamiento de potencia de satélites, p.26, 2001. ,
The rst transistor, Bell Laboratories, p.27, 1947. ,
, Power MOSFET basics. In: Powerconversion and Intelligent Motion-English Edition, vol.22, p.27, 1996.
Experimental and analytical performance evaluation of SiC power devices in the matrix converter, IEEE Transactions on Power Electronics, vol.29, p.27, 2014. ,
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs, IEEE Transactions on Electron Devices, vol.57, p.27, 2010. ,
1000-V, 30-A 4H-SiC BJTs with high current gain, IEEE Electron Device Letters, vol.26, p.27, 2005. ,
Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC, IEEE 15th International Symposium on. IEEE, p.27, 2003. ,
10 kV SiC BJTsStatic, switching and reliability characteristics, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on. IEEE. 2013, p.27 ,
, SiC Junction Transistors, p.28
Field-Eect" Transistor, Proceedings of the IRE, vol.40, p.28, 1952. ,
The vertical silicon carbide JFET-a fast and low loss solid state power switching device, Proceedings of the EPE, p.28, 2001. ,
A SiC JFET driver for a 5 kW, 150 kHz three-phase PWM converter, Industry Applications Conference, 2005. Fourtieth IAS Annual Meeting. Conference Record of the 2005, vol.81, p.28, 2005. ,
Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température, Lyon, vol.1, 2014. ,
Design, process, and performance of all-epitaxial normally-o ,
, physica status solidi (a), vol.10, p.28, 2009.
4H-SiC normally-o vertical junction eld-eect transistor with high current density, IEEE Electron Device Letters, vol.24, p.28, 2003. ,
Fabrication and characterization of 11-kV normally o 4H-SiC trenched-and-implanted vertical junction FET, IEEE Electron Device Letters, vol.25, p.28, 2004. ,
Caractérisation et modélisation du transistor JFET en SiC à haute température, vol.41, p.28, 2011. ,
Electric current control mechanism. In: Canadian patent CA 272437, vol.19, p.29, 1927. ,
Electric eld controlled semiconductor device, US Patent, vol.3, p.29, 1963. ,
Wide Bandgap (WBG) Power Devices for High-Density Power Converters-Excitement and Reality, Applied Power Electronic Conference, p.31, 2014. ,
6H-silicon carbide power devices for aerospace applications, Intersociety Energy Conversion Engineering Conference, vol.1, p.31, 1993. ,
High-voltage accumulation-layer UMOS-FET's in 4H-SiC, IEEE Electron Device Letters, vol.19, p.31, 1998. ,
1400 V 4H-SiC Power MOSFETs, Materials Science Forum ,
, Trans Tech Publ, vol.264, p.31, 1998.
Launches Industry's First Commercial Silicon Carbide Power MOSFET ,
, Destined to Replace Silicon Devices in High-Voltage Power Electronics, p.31
10 kV and 15 kV silicon carbide power MOSFETs for nextgeneration energy conversion and transmission systems, Energy Conversion Congress and Exposition (ECCE), p.31, 2014. ,
A survey of wide bandgap power semiconductor devices, IEEE transactions on Power Electronics, vol.29, p.31, 2014. ,
, JP Pat. Publication, p.31, 1968.
A MOS-controlled triac device. In: 1978 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, p.32, 1978. ,
Enhancement-and depletion-mode vertical-channel MOS gated thyristors, Electronics Letters, vol.15, p.32, 1979. ,
The insulated gate rectier (IGR): A new power switching device, Electron Devices Meeting, p.32, 1982. ,
Ultra high voltage (> 12 kV), high performance 4H-SiC IGBTs, Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, p.33, 2012. ,
27 kV, 20 A 4H-SiC n-IGBTs, Materials Science Forum ,
, Trans Tech Publ, vol.821, p.33, 2015.
4 kV, 10 A bipolar junction transistors in 4H-SiC. In: Power Semiconductor Devices and IC's, 2006. ISPSD, IEEE International Symposium on. IEEE, p.33, 2006. ,
Inuence of basal plane dislocation induced stacking faults on the current gain in SiC BJTs, Materials science forum, vol.527, p.33, 2006. ,
Analysis of operational degradation of SiC BJT characteristics. In: Power Semiconductor Devices and IC's, 2007. ISPSD'07. 19th International Symposium on, p.33, 2007. ,
Gated base structure for improved current gain in SiC bipolar technology, Solid-State Device Research Conference (ESSDERC), vol.2017, p.33, 2017. ,
Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs, IEEE Transactions on Electron Devices, vol.62, p.33, 2015. ,
SiC MOSFET reliability and implications for qualication testing, Reliability Physics Symposium (IRPS, vol.2, p.33, 2017. ,
Modeling and Simulation of Negative Bias Temperature Instability ,
Investigation of the hot carrier degradation in power LDMOS transistors with customized thick oxide, Microelectronics Reliability, vol.76, p.36, 2017. ,
Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Eect Transistors Based on MetalOxideSemiconductor Structures, Semiconductors, vol.52, p.36, 2018. ,
Gate oxide reliability issues of SiC MOSFETs under shortcircuit operation, IEEE Transactions on Power Electronics, vol.30, pp.2445-2455, 2015. ,
Field and temperature acceleration model for time-dependent dielectric breakdown, IEEE Transactions on Electron Devices, vol.46, p.220229, 1999. ,
Reliability issues of SiC MOSFETs: A technology for hightemperature environments, IEEE Transactions on Device and Materials Reliability, vol.10, p.3739, 2010. ,
Bias-temperature instabilities in 4H-SiC metaloxidesemiconductor capacitors, IEEE Transactions on Device and Materials Reliability, vol.12, p.39, 2012. ,
The paradigm shift in understanding the bias temperature instability: From reactiondiusion to switching oxide traps, IEEE Transactions on Electron Devices, vol.58, p.36523666, 2011. ,
Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verication, Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, p.39, 2005. ,
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing, Journal of applied Physics, vol.94, p.39, 2003. ,
Modeling of NBTI degradation and its impact on electric eld dependence of the lifetime, IEEE International Reliability Physics Symposium. Proceedings, p.39, 2004. ,
Study on Bias-Temperature Instability in 4H-SiC Metal Oxide Semiconductor Devices, vol.105, p.40 ,
Physics of semiconductor devices, p.40, 2006. ,
Transfer of Mobile Ions from Aqueous Solutions to the Silicon Dioxide Surface, Journal of the Electrochemical Society, vol.120, p.40, 1973. ,
Contribution à l'étude de la abilité des MOSFETs en carbure de silicium, vol.41, p.40, 2016. ,
High temperature gate-bias and reverse-bias tests on SiC MOSFETs, Microelectronics Reliability, vol.53, p.17711773, 2013. ,
Structure of recombination-induced stacking faults in high-voltage SiC pn junctions, Applied physics letters, vol.80, p.40, 2002. ,
Eects of dislocations and stacking faults on the reliability of 4H-SiC PiN diodes, Reliability Physics Symposium Proceedings, p.40, 2006. ,
A New Degradation Mechanism in High-Voltage SiC Power MOSFETs, IEEE Electron Device Letters, vol.28, 2007. ,
Reliability performance of 1200 V and 1700 V 4H-SiC DMOSFETs for next generation power conversion applications, Materials Science Forum ,
, Trans Tech Publ, vol.778, p.41, 2014.
Reliability and stability of SiC power mosfets and next-generation SiC MOSFETs, Wide Bandgap Power Devices and Applications (WiPDA), p.41, 2014. ,
Finite element modelling and experimental characterisation of paralleled SiC MOSFET failure under avalanche mode conduction, Power Electronics and Applications (EPE'15 ECCE-Europe), 2015 17th European Conference on, vol.43, p.42, 2015. ,
UIS failure mechanism of SiC power MOSFETs, Wide Bandgap Power Devices and Applications (WiPDA), p.43, 2016. ,
Electrothermal eects during unclamped inductive switching (UIS) of power MOSFET's, IEEE Transactions on Electron Devices, vol.44, p.43, 1997. ,
Robustness of SiC JFETs and Cascodes, Submitted to the Magazine of Bodo's Power Systems, p.43, 2015. ,
Studies of SiC power devices potential in power electronics for avionic applications, vol.109, p.107, 2016. ,
Behavior of high voltage SiC VJFETs under avalanche conditions, Applied Power Electronics Conference and Exposition, p.44, 2006. ,
Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs, Microelectronics Reliability, vol.54, p.44, 2014. ,
Reliability issues of SiC power MOSFETs toward high junction temperature operation, physica status solidi (a), vol.10, p.46, 2009. ,
A comprehensive study of short-circuit ruggedness of silicon carbide power MOSFETs, IEEE Journal of Emerging and Selected Topics in Power Electronics, vol.4, p.48, 2016. ,
Comparative evaluation of the short-circuit withstand capability of 1.2 kV silicon carbide (SiC) power transistors in real life applications, Microelectronics Reliability, vol.55, p.48, 2015. ,
Theoretical and Experimental Analyses of Safe Operating Area (SOA) of 1200-V 4H-SiC BJT, IEEE Transactions on Electron Devices, vol.55, p.49, 2008. ,
2.2 kV SiC BJTs with low VCESAT fast switching and short-circuit capability, Materials Science Forum, vol.645, p.49, 2010. ,
Study of silicon carbide devices for aeronautics applications. Theses, p.49, 2015. ,
URL : https://hal.archives-ouvertes.fr/tel-01265578
Short-circuit capability of 1200V SiC MOSFET and JFET for fault protection, Applied Power Electronics Conference and Exposition, p.2013 ,
High temperature characterization and analysis of silicon carbide (SiC) power semiconductor transistors, p.49, 2014. ,
Experimental behavior of single-chip IGBT and COOLMOS devices under repetitive short-circuit conditions, IEEE Transactions on Electron Devices, vol.52, p.49, 2005. ,
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS) ,
, Reliability Issues in Power Electronics, Microelectronics Reliability, pp.26-2714, 2016.
Reliability issues in GaN and SiC power devices, IEEE International Reliability Physics Symposium. IEEE, vol.74, p.52, 2014. ,
Body diode reliability investigation of SiC power MOSFETs, Microelectronics Reliability, vol.64, p.53, 2016. ,
, JESD22-A108D, Temperature, Bias and Operating Life, vol.84, p.85, 2010.
Transient temperature measurements and modeling of IGBT's under short circuit, IEEE transactions on power electronics, vol.13, p.54, 1998. ,
Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermosensitive electrical parameters, IEEE Transactions on Industry Applications, vol.49, p.54, 2013. ,
URL : https://hal.archives-ouvertes.fr/hal-01703887
Evolution of drift-free, high power 4H-SiC PiN diodes, Materials science forum, vol.527, p.66, 2006. ,
Techniques for minimizing the basal plane dislocation density in SiC epilayers to reduce Vf drift in SiC bipolar power devices, Materials science forum, vol.527, p.66, 2006. ,
SCT2080KE SiC Power Mosfet Datasheet ,
SCT30N120 Silicon Carbide Power Mosfet Datasheet, Rev. B, 2015. ,
Fundamentals of power electronics ,
Status on WBG Materials, vol.107, p.80, 2017. ,
Analysis and Reduction of Stacking Faults in Fast Epitaxial Growth, Silicon Carbide and Related Materials, vol.858, p.80, 2015. ,
High temperature pulsed-gate robustness testing of SiC power MOSFETs, Microelectronics Reliability, vol.55, p.85, 2015. ,
Next Generation SiC MOSFETs Performance and Reliability. https:// pdfs.semanticscholar.org/presentation/f3ce/e90bc5b0a7658794279d95ad465e12abbb83. pdf. Online; accessed 19, vol.108, p.85, 2016. ,
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs, Microelectronics Reliability, vol.55, p.93, 2015. ,
URL : https://hal.archives-ouvertes.fr/hal-01700463
An experimental approach to the health-monitoring of a silicon carbide MOSFET-based power module, Electric Machines and Drives Conference (IEMDC, p.93, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01532058
Acceleration factors for thin oxide breakdown, Journal of the Electrochemical Society, vol.132, p.94, 1985. ,
Electrical breakdown in thin gate and tunneling oxides, IEEE Transactions on Electron Devices, vol.32, p.94, 1985. ,
Comparison of E and 1/E TDDB models for SiO/sub 2/under long-term/low-eld test conditions, Electron Devices Meeting, p.94, 1998. ,
, System SourceMeter Instrument, Reference Manual. Rev. C. Cleveland, USA, 2016.
Hole injection oxide breakdown model for very low voltage lifetime extrapolation, Reliability Physics Symposium, p.98, 1993. ,
Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization eect and polysilicon depletion eect, Solid State Communications, vol.125, issue.3-4, p.98, 2003. ,
Anomalous TDDB statistics of gate dielectrics caused by charging-induced dynamic stress relaxation under constant voltage stress, IEEE Transactions on Electron Devices, vol.63, p.101, 2016. ,
Towards the Next Generation of Solid Oxide Fuel Cells Operating Below 600° C with Chemically Stable Proton-Conducting Electrolytes, Advanced materials, vol.24, p.105, 2012. ,
Hydrogen migration under avalanche injection of electrons in Si metaloxide-semiconductor capacitors, Journal of applied physics, vol.54, p.105, 1983. ,
Trends in the ultimate breakdown strength of high dielectricconstant materials, IEEE transactions on electron devices, vol.50, p.105, 2003. ,
Retaining springs for transistors, vol.127 ,
Sil-Pad K10 datasheet, 2008. ,
DO-160," in: Environmental conditions and test procedures for airborne equipment, vol.20, p.135, 2004. ,
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode. Microelectronics Reliability, vol.88, pp.636-640, 2018. ,
, , 2018.
, SiC MOSFETs robustness for diode-less applications, EPE Journal, vol.28, issue.3, pp.128-135, 2018.
, , 2017.
, Board Materials for High-Temperature Operation, Journal of Microelectronics and Electronic Packaging, vol.14, issue.4, pp.166-171, 2017.
,
High temperature ageing of microelectronics assemblies with SAC solder joints, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01564755
, Microelectronics Reliability, pp.362-367, 2017.
Lifetime of power electronics interconnections in accelerated test conditions: High temperature storage and thermal cycling. Microelectronics Reliability, pp.444-449, 2017. ,
URL : https://hal.archives-ouvertes.fr/hal-01562549
, Statistical Study of, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01381386
, Nanocrystalline Alloy Cut Cores From Two Dierent Manufacturers, Transactions on Magnetics, vol.50, issue.4, pp.1-4, 2014.
Simplied Mathematical Model for Calculating the Oxygen Excess Ratio of a PEM Fuel Cell System in Real-Time Applications. Transaction on Industrial Electronics, vol.61, pp.2816-2825, 2014. ,
Reactivation System for Proton-Exchange Membrane Fuel-Cells, Energies 2012, vol.5, pp.2404-2423, 2012. ,
, Étude de la robustesse de l'oxyde de grille pour des applications aéronautiques, INSA Lyon, tous droits réservés National Conference papers O. Avino-Salvado, H. Morel and C. Buttay, vol.2017, 2017.
, , 2016.
, Analyse de la robustesse des MOSFET SiC pour les applications "Diode-less, Symposium de Génie Électrique 2016 (SGE), 2016.