R. H. Mari, DLTS characterisation of defects in III-V compound semiconductors grown by MBE, 2011.

J. Baliga, Modern power devices, 1987.

R. Brown, A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness, 2015.

J. J. Berzelius, Untersuchungen über die Flussspathsä ure und deren merkwürdigsten Verbindungen, Annalen der Physik, vol.77, pp.169-230, 1824.

D. Zhuang and J. H. Edgar, Wet etching of GaN, AlN, and SiC: a review, Materials Science and Engineering: R: Reports, vol.48, pp.1-46, 2005.

M. A. Mannan, Defect Characterization of 4H-SIC by Deep Level Transient Spectroscopy (DLTS) and Influence of Defects on Device Performance, 2015.

J. B. Casady and R. W. Johnson, Status of silicon carbide (SiC) as a widebandgap semiconductor for high-temperature applications: A review, SolidState Electronics, vol.39, pp.1409-1422, 1996.

T. Tamaki, G. G. Walden, Y. Sui, and J. A. Cooper, Optimization of onState and Switching Performances for 15-20-kV 4H-SiC IGBTs, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.55, pp.1920-1927, 2008.

L. Cheng, A. K. Agarwal, C. Capell, M. O'loughlin, K. Lam et al., 20 kV, 2 cm 2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications, 2013 19th IEEE Pulsed Power Conference, pp.1-4, 2013.

A. Itoh, M. , and H. , Single crystal growth of SiC and electronic devices, Critical Reviews in Solid State and Materials Sciences, vol.22, pp.111-197, 1997.

C. Zetterling, Silicon dioxide and aluminium nitride as gate dielectric for high temperature and high power silicon carbide MOSFETs, 1997.

A. Elasser and T. P. Chow, Silicon carbide benefits and advantages for power electronics circuits and systems, Proceedings of the IEEE, vol.90, pp.969-986, 2002.

T. Kimoto and I. , SiC Technologies for Future Energy Electronics, 2010 Symposium on Vlsi Technology, pp.9-14, 2010.

M. Ruff, H. Mitlehner, and R. Helbig, Sic Devices: Physics and Numerical Simulation, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.41, pp.1040-1054, 1994.

H. Yuan, X. Tang, Y. Zhang, Y. Zhang, Q. Song et al., 4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination, Chinese Physics B, vol.23, p.57102, 2014.

Q. Song, H. Yuan, C. Han, Y. Zhang, X. Tang et al., Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current, Science China Technological Sciences, vol.58, pp.1369-1374, 2015.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 132

E. E. Tanr?kulu, D. E. Y?ld?z, A. Günen, and ?. , Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n -4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes, Physica Scripta, vol.90, p.95801, 2015.

D. J. Ewing, Q. Wahab, R. R. Ciechonski, M. Syvä-jä-rvi, R. Yakimova et al., Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes, Semiconductor Science and Technology, vol.22, pp.1287-1291, 2007.

?. Gelczuk, P. Kamyczek, E. P?aczek-popko, and M. D?browska-szata, Correlation between barrier inhomogeneities of 4H-SiC 1A/600V Schottky rectifiers and deep-level defects revealed by DLTS and Laplace DLTS, Solid-State Electronics, vol.99, pp.1-6, 2014.

J. P. Doyle, M. O. Aboelfotoh, B. G. Svensson, A. Schoner, and N. Nordell, Characterization of electrically active deep level defects in 4H and 6H SiC, Diamond and Related Materials, vol.6, pp.1388-1391, 1997.

V. Afanasev, M. Bassler, G. Pensl, and M. Schulz, Intrinsic SiC/SiO2 interface states, physica status solidi (a), vol.162, pp.321-337, 1997.

Z. Q. Fang, B. Claflin, D. C. Look, and G. C. Farlow, Effects of Electron Irradiation on Deep Centers in High-Purity Semi-Insulating 6H-SiC, Journal of Electronic Materials, vol.36, pp.307-311, 2007.

A. Uddin, H. Mitsuhashi, and T. Uemoto, Investigation of deep levels and residual impurities in sublimation-grown SiC substrates, Japanese Journal of Applied Physics Part 2-Letters, vol.33, pp.908-911, 1994.

T. Kimoto, A. Itoh, H. Matsunami, S. Sridhara, L. L. Clemen et al., Nitrogen donors and deep levels in high-quality 4H-SiC epilayers grown by chemical vapor deposition, Applied Physics Letters, vol.67, p.2833, 1995.

K. Danno, T. Kimoto, and H. Matsunami, Midgap levels in both n-and ptype 4H-SiC epilayers investigated by deep level transient spectroscopy, Applied Physics Letters, vol.86, p.122104, 2005.

W. Bollmann, Formation Volume of Schottky Defects (Vacancies) in Inorganic and Organic Compounds and the Defect Formation Mechanism of Melting, Crystal Research and Technology, vol.27, pp.673-684, 1992.

K. Harafuji and K. Kawamura, Point defects induced by physical sputter ing in wurtzite-type GaN crystal, Japanese Journal of Applied Physics, vol.49, p.11001, 2010.

B. S. Rao and S. Sanyal, Charge transfer effect on formation and binding energies of vancancy pairs in NaCl and KCl, physica status solidi (b), vol.164, pp.351-356, 1991.

L. Storasta, J. Bergman, E. Janzé-n, A. Henry, and J. Lu, Deep levels created by low energy electron irradiation in 4 H-SiC, Journal of applied physics, vol.96, pp.4909-4915, 2004.

H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama et al., Intrinsic defects in cubic silicon carbide, physica status solidi (a), vol.162, pp.173-198, 1997.

S. Orlinski, J. Schmidt, E. Mokhov, and P. Baranov, Silicon and carbon vacancies in neutron-irradiated SiC: A high-field electron paramagnetic resonance study, Physical Review B, vol.67, p.125207, 2003.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 133

S. J. Zinkle, Effect of H and He irradiation on cavity formation and blistering in ceramics, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.286, pp.4-19, 2012.

A. Kawasuso, H. Itoh, S. Okada, and H. Okumura, Annealing processes of vacancy-type defects in electron-irradiated and as-grown 6 H-SiC studied by positron lifetime spectroscopy, Journal of applied physics, vol.80, pp.5639-5645, 1996.

A. Kawasuso, F. Redmann, R. Krause-rehberg, P. Sperr, T. Frank et al., Annealing process of defects in epitaxial SiC induced by He and electron irradiation: Positron annihilation study, Materials Science Forum, pp.537-542, 2001.

Z. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto, Electron irradiation-induced defects in ZnO studied by positron annihilation, Physica B: Condensed Matter, vol.376, pp.722-725, 2006.

S. Brunner, W. Puff, A. Balogh, and P. Mascher, Induced defects in ZnS by electron and proton irradiation and defect-annealing behavior, Physica B: Condensed Matter, vol.273, pp.898-901, 1999.

S. Dannefaer, P. Mascher, and D. Kerr, Annealing studies of vacancies in proton irradiated silicon, Journal of applied physics, vol.73, pp.3740-3743, 1993.

V. Volterra, Sur l'é quilibre des corps é lastiques multiplement connexes, Annales scientifiques de l'École normale supé rieure, pp.401-517, 1907.

T. Figiels, Electron Emission from Extended Defects : DLTS Signal in Case of Dislocation Traps, phys. stat. sol. (a), vol.121, pp.187-193, 1990.

S. U. Omar, T. S. Sudarshan, . Tawhida, H. Rana, M. V. Song et al., Interface Trap-Induced Nonideality in As-Deposited Ni/4H-SiC Schottky Barrier Diode, IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.62, pp.615-621, 2015.

H. Kim, K. E. Kweon, C. Chou, J. G. Ekerdt, and G. S. Hwang, On the nature and behavior of Li atoms in Si: a first principles study, The Journal of Physical Chemistry C, vol.114, pp.17942-17946, 2010.

A. B. Anderson and S. Mehandru, n-type dopants and conduction-band electrons in diamond: Cluster molecular-orbital theory, Physical Review B, vol.48, p.4423, 1993.

J. Fairfield and B. Gokhale, Gold as a recombination centre in silicon, Solid-State Electronics, vol.8, pp.685-691, 1965.

A. Uddin and T. Uemoto, TRAP CENTERS IN GERMANIUM-IMPLANTED AND IN AS-GROWN 6H-SIC, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol.34, pp.3023-3029, 1995.

N. Achtziger, D. Forkel-wirth, J. Grillenberger, T. Licht, and W. Witthuhn, Identification of deep bandgap states in 4H-and 6H-SiC by radio-tracer DLTS and PAC-spectroscopy, Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, vol.136, pp.756-762, 1998.

T. Dalibor, H. Trageser, G. Pensl, T. Kimoto, H. Matsunami et al., Oxygen in silicon carbide: shallow donors and deep accepters

, Materials Science and Engineering B-Solid State Materials for Advanced Technology, pp.454-459, 1999.

O. Klettke, S. A. Reshanov, G. Pensl, Y. Shishkin, R. P. Devaty et al., Electrical and optical properties of erbium-related centers in 6H silicon carbide, Physica B-Condensed Matter, vol.308, pp.687-690, 2001.

A. Castaldini, A. Cavallini, and L. Rigutti, Assessment of the intrinsic nature of deep levelZ1/Z2by compensation effects in proton-irradiated 4H-SiC, Semiconductor Science and Technology, vol.21, pp.724-728, 2006.

K. Kawahara, G. Alfieri, and T. Kimoto, Detection and depth analyses of deep levels generated by ion implantation in n-and p-type 4H-SiC, Journal of Applied Physics, vol.106, p.13719, 2009.

P. B. Klein, Identification and carrier dynamics of the dominant lifetime limiting defect in n-4H-SiC epitaxial layers, physica status solidi (a), vol.206, pp.2257-2272, 2009.

K. Kawahara, X. Trinh, N. Tien-son, E. Janze?n, J. Suda et al., Investigation on origin of Z[sub 1/2] center in SiC by deep level transient spectroscopy and electron paramagnetic resonance, Applied Physics Letters, vol.102, p.112106, 2013.

K. Kawahara, X. Trinh, N. Tien-son, E. Janzén, J. Suda et al.,

. Kimoto, Quantitative comparison between Z1?2 center and carbon vacancy in 4H-SiC, Journal of Applied Physics, vol.115, p.143705, 2014.

A. O. Evwaraye, S. R. Smith, M. Skowronski, and W. C. Mitchel, Observation of surface defects in 6H-SiC wafers, Journal of Applied Physics, vol.74, p.5269, 1993.

M. Gong, S. Fung, C. D. Beling, and Z. You, Electron-irradiation-induced deep levels in n-type 6H-SiC, Journal of Applied Physics, vol.85, p.7604, 1999.

S. Brotherton, The width of the non-steady state transition region in deep level impurity measurements, Solid-state electronics, vol.26, pp.987-990, 1983.

K. Danno and T. Kimoto, Investigation of deep levels in n-type 4H-SiC epilayers irradiated with low-energy electrons, Journal of Applied Physics, vol.100, p.113728, 2006.

N. Sghaier, A. Souifi, J. M. Bluet, and G. Guillot, Correlation between direct characteristic deficiencies and deep levels in 6H-SiC Schottky diodes, Materials Science & Engineering C-Biomimetic and Supramolecular Systems, vol.21, pp.283-286, 2002.

N. Achtziger and W. Witthuhn, Band gap states of Ti, V, and Cr in 4H-silicon carbide, Applied Physics Letters, vol.71, p.110, 1997.

K. V. Nguyen and K. C. , Ru-Induced Deep Levels in Ru/4H-SiC Epilayer Schottky Diodes by Deep Level Transient Spectroscopy, ECS Journal of Solid State Science and Technology, vol.5, pp.3078-3081, 2015.

A. Castaldini, A. Cavallini, L. Rigutti, F. Nava, S. Ferrero et al., Deep levels by proton and electron irradiation in 4H-SiC, Journal of Applied Physics, vol.98, p.53706, 2005.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 135

I. Thurzo, R. Beyer, and D. R. Zahn, Experimental evidence for complementary spatial sensitivities of capacitance and charge deep -level transient spectroscopies, Semiconductor Science and Technology, vol.15, pp.378-385, 2000.

Z. Q. Fang, D. C. Look, A. Saxler, and W. C. Mitchel, Characterization of deep centers in bulk n-type 4H-SiC, Physica B-Condensed Matter, vol.308, pp.706-709, 2001.

J. R. Jenny, J. Skowronski, W. C. Mitchel, H. M. Hobgood, R. C. Glass et al., Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC, Applied Physics Letters, vol.68, p.1963, 1996.

F. C. Beyer, C. G. Hemmingsson, S. Leone, Y. C. Lin, A. Ga?llstro?m et al., Deep levels in iron doped n-and p-type 4H-SiC, Journal of Applied Physics, vol.110, p.123701, 2011.

J. Grillenberger, N. Achtziger, R. Sielemann, and W. Witthuhn, Radiotracer identification of a Ta-related deep level in 4H-SiC, Journal of Applied Physics, vol.88, p.3260, 2000.

D. Menichelli, M. Scaringella, F. Moscatelli, M. Bruzzi, and R. Nipoti, Characterization of energy levels related to impurities in epitaxial 4H -SiC ion implanted p+n junctions, Diamond and Related Materials, vol.16, pp.6-11, 2007.

S. Nakamura, T. Kimoto, and H. Matsunami, High-Sensitivity Analysis of Z1Center Concentration in 4H-SiC Grown by Horizontal Cold-Wall Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol.41, pp.2987-2988, 2002.

F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, J. Isoya et al., Defects in low-energy electron-irradiated n-type 4H-SiC, Physica Scripta, vol.141, p.14006, 2010.

K. Fujihira, T. Kimoto, and H. Matsunami, Growth and characterization of 4H-SiC in vertical hot-wall chemical vapor deposition, Journal of Crystal Growth, vol.255, pp.136-144, 2003.

F. Nava, A. Castaldini, A. Cavallini, P. Errani, and V. Cindro, Radiation detection properties of 4H-SiC Schottky diodes irradiated up to 10(16) n/cm(2) by 1 MeV neutrons, Ieee Transactions on Nuclear Science, vol.53, pp.2977-2982, 2006.

I. D. Booker, J. U. Hassan, L. Lilja, F. C. Beyer, R. Karhu et al., Carrier Lifetime Controlling DefectsZ1/2and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC, Crystal Growth & Design, vol.14, pp.4104-4110, 2014.

J. Bardeen, Surface states and rectification at a metal semi -conductor contact, Physical Review, vol.71, p.717, 1947.

A. Cowley and S. Sze, Surface states and barrier height of metalsemiconductor systems, Journal of Applied Physics, vol.36, pp.3212-3220, 1965.

E. Rhoderick and R. Williams, Metal-Semiconductor Contacts. 1988. Clarendon, 1988.

C. Wagner, Theory of current rectifiers, Phys. Z, vol.32, pp.641-645, 1931.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 136

W. Schottky, &. W. Schottky, and E. Spenke, Wiss. Veroff. Siemens Werken, vol.18, p.225, 1939.

H. A. Bethe, Theory of the boundary layer of crystal rectifiers, pp.43-55

M. Cambridge, Radiation Laboratory, 1942.

G. Baccarani, Current transport in Schottky-barrier diodes, Journal of Applied Physics, vol.47, pp.4122-4126, 1976.

F. Berz, The Bethe condition for thermionic emission near an absorbing boundary, Solid-state electronics, vol.28, pp.1007-1013, 1985.

C. Crowell and S. Sze, Current transport in metal-semiconductor barriers, Solid-state electronics, vol.9, pp.1035-1048, 1966.

J. Shannon, Thermionic-field emission through silicon Schottky barriers at room temperature, Solid-State Electronics, vol.20, pp.869-872, 1977.

W. Shockley and W. Read, Statistics of the recombinations of holes and electrons, Physical review, vol.87, p.835, 1952.

R. N. Hall, Electron-hole recombination in germanium, Physical review, vol.87, p.387, 1952.

S. Sze, C. Crowell, and D. Kahng, Photoelectric determination of the image force dielectric constant for hot electrons in Schottky barriers, Journal of Applied Physics, vol.35, pp.2534-2536, 1964.

C. Raynaud, Caracterisations é lectriques de maté riaux et composants en carbure de silicium, 1995.

S. Chand and J. Kumar, Evidence for the double distribution of barrier heights in Schottky diodes from I -V -T measurements, Semicond. Sci. Technol, vol.11, pp.1203-1208, 1996.

R. Hackam and P. Harrop, Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes, IEEE Transactions on Electron Devices, vol.19, pp.1231-1238, 1972.

F. Padovani and G. Sumner, Experimental Study of Gold-Gallium Arsenide Schottky Barriers, Journal of Applied Physics, vol.36, pp.3744-3747, 1965.

Y. Song, R. Van-meirhaeghe, W. Laflere, and F. Cardon, On the difference in apparent barrier height as obtained from capacitance-voltage and currentvoltage-temperature measurements on Al/p-InP Schottky barriers, SolidState Electronics, vol.29, pp.633-638, 1986.

J. H. Werner and H. H. Güttler, Barrier inhomogeneities at Schottky contacts, Journal of Applied Physics, vol.69, pp.1522-1533, 1991.

L. Wagner, R. Young, and A. Sugerman, A note on the correlation between the Schottky-diode barrier height and the ideality factor as determined from IV measurements, IEEE electron device letters, vol.4, pp.320-322, 1983.

N. N. Reddy, V. R. Reddy-;--v-t, and C. Measurements, Barrier characteristics of Pt/Ru Schottky contacts on n-type GaN based on I, Bulletin of Materials Science, vol.35, pp.53-61, 2012.

S. Chand and J. Kumar, Current-voltage characteristics and barrier parameters of Pd2Si/p-Si (111) Schottky diodes in a wide temperature range, Semiconductor science and technology, vol.10, p.1680, 1995.

A. Bhuiyan, A. Martinez, and D. Esteve, A new Richardson plot for nonideal schottky diodes, Thin Solid Films, vol.161, pp.93-100, 1988.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 137

B. Skromme, E. Luckowski, K. Moore, M. Bhatnagar, C. Weitzel et al., Electrical characteristics of Schottky barriers on 4H-SiC: The effects of barrier height nonuniformity, ELECTRONIC MATERIALS, vol.29, pp.376-383, 2000.

M. K. Hudait and S. B. Krupanidhi, Effects of thin oxide in metalsemiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes, Solid-State Electronics, vol.44, pp.1089-1097, 2000.

M. L. Bolen and M. A. Capano, Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes, Journal of Electronic Materials, vol.38, pp.574-580, 2009.

D. Lee, C. Kim, H. Lee, S. Lee, H. Kang et al., Improving the Barrier Height Uniformity of 4H-SiC Schottky Barrier Diodes by Nitric Oxide Post-Oxidation Annealing, IEEE ELECTRON DEVICE LETTERS, vol.35, pp.868-870, 2014.

G. Brezeanu, G. Pristavu, F. Draghici, M. Badila, and R. Pascu, Characterization technique for inhomogeneous 4H-SiC Schottky contacts: A practical model for high temperature behavior, Journal of Applied Physics, vol.122, p.84501, 2017.

J. L. Freeouf, T. N. Jackson, S. E. Laux, and J. M. Woodall, Effective barrier heights of mixed phase contacts: Size effects, Applied Physics Letters, vol.40, pp.634-636, 1982.

R. T. Tung, Electron transport at metal-semiconductor interfaces: General theory, Physical Review B, vol.45, pp.13509-13523, 1992.

H. J. Im, Y. Ding, J. P. Pelz, and W. J. Choyke, Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity, Physical Review B, vol.64, 2001.

S. Tumakha, D. J. Ewing, L. M. Porter, Q. Wahab, X. Ma et al., Defect-driven inhomogeneities in Ni?4H-SiC Schottky barriers, Applied Physics Letters, vol.87, p.242106, 2005.

D. Tomer, S. Rajput, L. J. Hudy, C. H. Li, and L. Li, Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions, Nanotechnology, vol.26, p.215702, 2015.

M. Gülnahar and H. Efeo?lu, Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot, Solid-State Electronics, vol.53, pp.972-978, 2009.

A. N. Be?ta?, S. Yaz?c?, F. Akta?, and B. Abay, Double Gaussian distribution of barrier height for FeCrNiC alloy Schottky contacts on p-Si substrates, Applied Surface Science, vol.318, pp.280-284, 2014.

A. Bobby, S. Verma, K. Asokan, P. M. Sarun, and B. K. Antony, Phase transition induced double-Gaussian barrier height distribution in Schottky diode, Physica B: Condensed Matter, vol.431, pp.6-10, 2013.

E. Omotoso, W. E. Meyer, F. D. Auret, A. T. Paradzah, and M. J. Legodi, Electrical characterization of deep levels created by bombarding nitrogendoped 4H-SiC with alpha-particle irradiation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.371, pp.312-316, 2016.

V. Lauer, G. Bremond, A. Souifi, G. Guillot, K. Chourou et al., Electrical and optical characterisation of vanadium in 4H and 6H-SiC

, Materials Science and Engineering B-Solid State Materials for Advanced Technology, pp.248-252, 1999.

S. Loualiche, A. Nouailhat, and G. Guillot, Study of E3 trap annealing in GaAs by DDLTS technique, Solid State Communications, vol.44, pp.41-45, 1982.

H. Lefevre and M. Schulz, Double correlation technique (DDLTS) for the analysis of deep level profiles in semiconductors, Applied physics, vol.12, pp.45-53, 1977.

A. F. Basile, J. Rozen, J. R. Williams, L. C. Feldman, and P. M. Mooney, Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces, Journal of Applied Physics, vol.109, p.64514, 2011.

D. V. Lang, Deep-level transient spectroscopy: A new method to characterize traps in semiconductors, Journal of Applied Physics, vol.45, pp.3023-3032, 1974.

S. Zachman, E. Finkman, and G. Bahir, Adaptation of deep level transient spectroscopy for narrow bandgap semiconductor materials, Semiconductor Science and Technology, vol.8, p.90, 1993.

O. Mitrofanov and M. Manfra, Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors, Journal of Applied Physics, vol.95, pp.6414-6419, 2004.

M. Trushin and O. F. Vyvenko, Impact of Electric Field on Thermoemission of Carriers from Shallow Dislocation-Related Electronic States, Solid State Phenomena, pp.299-304, 2014.

G. Alfieri, E. V. Monakhov, and B. G. Svensson, Evidence for a deep two charge state defect in high energy electron irradiated 4H-SiC, Materials Science Forum, pp.481-484, 2004.

M. Kato, K. Yoshihara, M. Ichimura, T. Hatayama, and T. Ohshima, Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation, Japanese Journal of Applied Physics, vol.53, pp.4-09, 2014.

L. Dobaczewski, P. Kaczor, I. Hawkins, and A. Peaker, Laplace transform deep-level transient spectroscopic studies of defects in semiconductors, Journal of applied physics, vol.76, pp.194-198, 1994.

S. Weiss and R. Kassing, Deep Level Transient Fourier Spectroscopy (DLTFS)-A technique for the analysis of deep level properties, SolidState Electronics, vol.31, pp.1733-1742, 1988.

A. Chantre, G. Vincent, and D. Bois, Deep-level optical spectroscopy in GaAs, Physical Review B, vol.23, p.5335, 1981.

E. Gaubas, D. Bajar?nas, T. ?eponis, D. Me?kauskait?, and J. Pavlov, Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si pad detectors, Lithuanian Journal of Physics, vol.53, 2013.

K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama, and T. Ohshima, Deep levels in p-type 4H-SiC induced by low-energy electron irradiation, Materials Science Forum, pp.373-376, 2013.

V. Polyakov, A. Rukovishnikov, N. Rossukanyi, V. Varnin, I. Teremetskaya et al., Charge transient spectroscopy study of deep centers in Reference Teng ZHANG / Thèse en Génie électrique, p.139, 2018.

C. Diamond and D. Films, MRS Online Proceedings Library Archive, vol.442, 1996.

T. Okamoto, J. Long, R. H. Wilke, J. Stitt, R. Maier et al., A charge-based deep level transient spectroscopy measurement system and characterization of a ZnO-based varistor and a Fe-doped SrTiO3 dielectric, Japanese Journal of Applied Physics, vol.55, p.26601, 2016.

L. Enriquez, S. Duenas, J. Barbolla, I. Izpura, and E. Muñoz, Influence of refilling effects on deep-level transient spectroscopy measurements in Sedoped Al x Ga1? x As, Journal of applied physics, vol.72, pp.525-530, 1992.

P. V. Kolev and M. Deen, Constant Resistance DLTS in Submicron MOSFETs, Proceedings of the Fourth Symposium on Low Temperature Electronics and High Temperature Superconductivity, p.147, 1997.

P. V. Kolev, M. J. Deen, J. Kierstead, and M. Citterio, Constant -resistance deep-level transient spectroscopy in Si and Ge JFET's, IEEE Transactions on Electron Devices, vol.46, pp.204-213, 1999.

C. M. Jackson, A. R. Arehart, E. Cinkilic, B. Mcskimming, J. S. Speck et al., Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies, Journal of Applied Physics, vol.113, p.204505, 2013.

M. Bassler and G. Pensl, Long-time constant-capacitance DLTS investigations of 6H SiC/MOS structures: comparison of dry and wet oxidation, Materials Science and Engineering B, pp.490-492, 1990.

C. Hemmingsson, N. T. Son, O. Kordina, E. Janzen, J. L. Lindstrom et al., Capacitance transient studies of electron irradiated 4H-SiC, Materials Science and Engineering B-Solid State Materials for Advanced Technology, vol.46, pp.336-339, 1997.

D. V. Davydov, A. A. Lebedev, V. V. Kozlovski, N. S. Savkina, and A. M. , DLTS study of defects in 6H-and 4H-SiC created by proton irradiation, Physica B-Condensed Matter, vol.308, pp.641-644, 2001.

T. Dalibor, G. Pensl, T. Kimoto, H. Matsunami, S. Sridhara et al., Radiation-induced defect centers in 4H silicon carbide, Diamond and Related Materials, vol.6, pp.1333-1337, 1997.

E. Kalinina, G. Onushkin, D. Davidov, A. Hallen, A. Konstantinov et al., Electrical study of 4H-SiC irradiated with swift heavy ions, 2002.

M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura et al., Optical cross sections of deep levels in 4H-SiC, Journal of Applied Physics, vol.100, p.53708, 2006.

E. Omotoso, W. E. Meyer, S. M. Coelho, M. Diale, P. N. Ngoepe et al., Electrical characterization of defects introduced during electron beam deposition of W Schottky contacts on n-type 4H-SiC, Materials Science in Semiconductor Processing, vol.51, pp.20-24, 2016.

S. Mitra, M. V. Rao, K. Jones, N. Papanicolaou, and S. Wilson, Deep levels in ion implanted field effect transistors on SiC, Solid-State Electronics, vol.47, pp.193-198, 2003.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 140

S. Mitra, Deep-level transient spectroscopy study on double implanted n, Journal of Applied Physics, vol.95, p.69, 2004.

K. Danno and T. Kimoto, High-Temperature Deep Level Transient Spectroscopy on As-Grown P-Type 4H-SiC Epilayers, Japanese Journal of Applied Physics, vol.45, pp.285-287, 2006.

R. Green, A. Lelis, and D. Habersat, Application of reliability test standards to SiC Power MOSFETs, Reliability Physics Symposium (IRPS), 2011.

R. Green, A. J. Lelis, and D. B. Habersat, Charge trapping in SiC power MOSFETs and its consequences for robust reliability testing, Materials Science Forum, pp.1085-1088, 2012.

E. Pomè-s, J. Reynè-s, P. Tounsi, and J. Dorkel, Investigation of failure mechanisms in low-voltage power VDMOSFETs linked with gate oxide process quality, 28th International Conference on, pp.251-254, 2012.

A. J. Lelis, R. Green, D. B. Habersat, and M. El, Basic mechanisms of threshold-voltage instability and implications for reliability testing of SiC MOSFETs, IEEE Transactions on Electron Devices, vol.62, pp.316-323, 2015.

A. C. Ahyi, S. Wang, and J. R. Williams, Gamma irradiation effects on 4H -SiC MOS capacitors and MOSFETs, Materials science forum, pp.1063-1066, 2006.

S. K. Dixit, Radiation-induced charge trapping studies of advanced Si and SiC based MOS devices, 2008.

S. Dhombres, A. Michez, J. Boch, F. Saigne, S. Beauvivre et al., Study of a Thermal Annealing Approach for Very High Total Dose Environments, IEEE Transactions on Nuclear Science, vol.61, pp.2923-2929, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01635351

C. X. Zhang, E. X. Zhang, D. M. Fleetwood, R. D. Schrimpf, S. Dhar et al., Effects of bias on the irradiation and annealing responses of 4H-SiC MOS devices, IEEE Transactions on Nuclear Science, vol.58, pp.2925-2929, 2011.

T. Ohshima, S. Onoda, N. Iwamoto, T. Makino, M. Arai et al., Radiation response of silicon carbide diodes and transistors, pp.378-402, 2013.

L. Yang and A. Castellazzi, High temperature gate-bias and reverse-bias tests on SiC MOSFETs, Microelectronics Reliability, vol.53, pp.1771-1773, 2013.

A. J. Lelis, D. Habersat, R. Green, A. Ogunniyi, M. Gurfinkel et al., Time dependence of bias-stress-induced SiC MOSFET thresholdvoltage instability measurements, IEEE Transactions on Electron Devices, vol.55, pp.1835-1840, 2008.

A. Akturk, J. Mcgarrity, S. Potbhare, and N. Goldsman, Radiation effects in commercial 1200 V 24 a silicon carbide power MOSFETs, IEEE Transactions on Nuclear Science, vol.59, pp.3258-3264, 2012.

I. S. Esqueda, H. J. Barnaby, and M. P. King, Compact modeling of total ionizing dose and aging effects in MOS technologies, IEEE Transactions on Nuclear Science, vol.62, pp.1501-1515, 2015.

Z. Teng, Thèse en Génie électrique / 2018 / Institut national des sciences appliquées de Lyon 141

E. Vianello, F. Driussi, D. Esseni, L. Selmi, M. Van-duuren et al., Does multi-trap assisted tunneling explain the oxide thickness dependence of the statistics of SILC in FLASH memory arrays?, pp.403-406, 2006.

M. Gurfinkel, H. D. Xiong, K. P. Cheung, J. S. Suehle, J. B. Bernstein et al., Characterization of transient gate oxide trapping in SiC MOSFETs using fast I-V techniques, IEEE Transactions on Electron Devices, vol.55, pp.2004-2012, 2008.

T. Chen, Z. Luo, J. D. Cressler, T. F. Isaacs-smith, J. R. Williams et al., The effects of NO passivation on the radiation response of SiO2/4H-SiC MOS capacitors, Solid-State Electronics, vol.46, pp.2231-2235, 2002.

Y. Xu, J. Bi, G. Xu, K. Xi, B. Li et al., Total ionizing dose effects and annealing behaviors of HfO 2-based MOS capacitor, Science China Information Sciences, vol.60, p.120401, 2017.

C. Raynaud and G. Guillot, Dopant level freeze-out in 6H-SiC Schottky diodes and junctions, Semiconducting and Semi-Insulating Materials Conference, pp.227-230, 1996.

T. Takase, M. Sakaino, Y. Sun, and T. Miyasato, Measurement of Ionization Energies of Nitrogen in 4H-SiC by Traveling-Wave Method, Japanese Journal of Applied Physics, vol.52, p.91301, 2013.

A. V. Los and M. S. Mazzola, Influence of carrier freeze-out on SiC Schottky junction admittance, Journal of electronic materials, vol.30, pp.235-241, 2001.

H. Yoshioka, T. Nakamura, and T. Kimoto, Generation of very fast states by nitridation of the SiO2/SiC interface, Journal of Applied Physics, vol.112, p.24520, 2012.

G. Watkins, Negative-U properties for point defects in silicon, MRS Online Proceedings Library Archive, vol.2, 1980.

C. Hemmingsson, N. Son, A. Ellison, J. Zhang, and E. Janzé-n, Negative-U centers in 4H silicon carbide, Physical Review B, vol.58, p.10119, 1998.

C. Hemmingsson, N. Son, and E. Janzé-n, Observation of negative-U centers in 6H silicon carbide, Applied physics letters, vol.74, pp.839-841, 1999.

M. Weidner, G. Pensl, H. Nagasawa, A. Schöner, and T. Ohshima, Negative-U-centers in 4H-and 6H-SiC detected by spectral light excitation, Materials Science Forum, pp.485-488, 2004.

J. Furthmüller, A. Zywietz, and F. Bechstedt, Monovacancies in 3C and 4H SiC, Materials Science and Engineering: B, vol.61, pp.244-247, 1999.

A. Zywietz, J. Furthmüller, and F. Bechstedt, Vacancies in SiC: Influence of Jahn-Teller distortions, spin effects, and crystal structure, Physical Review B, vol.59, p.15166, 1999.

L. Dobaczewski and P. Kaczor, Ionization and capture kinetics of DX centres in AlGaAs and GaSb: approach for a negative-U defect, Semiconductor Science and Technology, vol.6, p.51, 1991.

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. Directeur-de-thèse,