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, Chapitre VI : Vers l'intégration dans des dispositifs
,
,
, Caractérisations électriques des structures capacitives préparées
Etude d'une structure capacitive ferroélectrique avec BaTiO3 amorphe ,
Intégration de BaTiO3 dans des transistors à effet de champ III.1. Présentation de la structure des transistors ,
, Chapitre VI : Vers l'intégration dans des dispositifs
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, La mise en évidence de ferroélectricité de BaTiO 3 amorphe dans des structures capacitives est une piste à explorer pour une éventuelle intégration de ces matériaux, plus facile à mettre en oeuvre que pour des couches épitaxiées
, Le travail que nous avons initié pour l'intégration de BaTiO 3 dans des transistors est en cours de réalisation et sera donc à poursuivre. Une fois les premiers transistors terminés, il faudra tester les propriétés électriques de ceux-ci et évaluer leur
, , p.251
, Annexe, vol.2
, Substrats de Si 0.25 Ge 0.75 contraints sur Si réalisés pour des de temps de dépôt plus courts, Annexe, vol.3, p.255
, Analyse XPS de la préparation d'un substrat Si 0.8 Ge 0.2 -Ajustement des pics, Annexe, vol.5
, Analyse XPS de la croissance de BaTiO 3 sur Si 0.8 Ge 0.2 -Ajustement des pics, Annexe, vol.5
, Croissance de BaTiO 3 sur un substrat pré-structuré, Annexe, vol.6
, Annexe 5 : Analyse XPS de la croissance de BaTiO3 sur Si0.8Ge0.2 -Ajustement des pics
, pour deux échantillons, l'un passivé Sr et l'autre Ba. Les différentes étapes sont : 1
, Recuit à 500°C puis ajout de 2 minutes de Sr/Ba à 500°C
, Recuit à 760°C pendant 20-30 minutes (en fonction du RHEED)
, Après exposition à l'oxygène (une minute sous P(O 2 ) croissante jusqu'à 1x10 -7 Torr)
, Croissance de 2 monocouches de BaTiO 3 à 500°C sous P(O 2 ) =1x10 -7 Torr 6. Croissance de 10 monocouches de BaTiO 3 à 500°C sous P(O 2 ) =1x10 -7 Torr 7. Oxydation plasma 40 minutes à 180°C sous 1x10 -5 Torr d'oxygène (réalisée seulement sur l
, des propriétés structurales ou physico-chimiques et de la ferroélectricité -applications à des dispositifs à effet de champ Résumé L'intégration monolithique d'oxydes ferroélectriques sur substrats semi-conducteurs pourrait permettre l'ajout de nouvelles fonctionnalités sur puces de la nanoélectronique. L'utilisation d'un ferroélectrique est en particulier intéressante pour la réalisation de dispositifs à basse consommation d'énergie. Toutefois, leur intégration se heurte à un certain nombre de verrous scientifiques et technologiques tels que le contrôle de l'interface oxyde/semi-conducteur, l'instabilité de la polarisation ferroélectrique en couches minces ou encore la compatibilité de l'intégration avec les procédés industriels actuels. Les principaux objectifs de ma thèse ont été, Epitaxie par jets moléculaires de l'oxyde BaTiO 3 sur Si et Si 1-x Ge x : étude de la croissance
, Les analyses de diffraction des rayons X (XRD) combinées à des techniques avancées de microscopie électronique en transmission (STEM-HAADF, GPA, EELS) ont permis d'établir une corrélation, à l'échelle locale, entre l'orientation de la maille tétragonale et la composition cationique des films. La ferroélectricité de films orientés axe c, d'épaisseur 16-20 nm, préparés sous des pressions partielles P(O 2 ) de 1-5 x 10 -7 Torr, Différentes conditions de croissance sur substrats de silicium, en particulier la température et la pression d'oxygène P, pp.450-525
, Nous avons ensuite étudié la croissance de BaTiO 3 épitaxié sur substrats Si 1-x Ge x , ce qui constitue une approche inédite, particulièrement intéressante pour moduler les contraintes
, Afin de comprendre l'effet de la présence de Ge, la croissance de BaTiO 3
, Ge 0.2 avec des atomes de Ba permet l'épitaxie directe d'un film de BaTiO 3 orienté (112), ceci par l'intermédiaire d'une couche d'interface épitaxiée, identifiée comme étant le silicate de structure orthorhombique Ba 2 SiO 4 . Ce silicate est épitaxié selon deux orientations dans le plan de Si 0
une voie d'intégration basse température « gate-last » a été développée pour intégrer les couches minces de BaTiO 3 dans des dispositifs à effets de champ sur Si (condensateurs et transistors). Les films de BaTiO 3 ont été déposés par MBE sur des substrats pré-structurés ,
, Un procédé approprié a été choisi pour le dépôt de l'électrode TiN et pour la lithographie/gravure. Certains empilements, composés d'une matrice amorphe et de nano-grains dans les structures capacitives, présentent un comportement ferroélectrique (Tc~105°C). Cette première démonstration d'une capacité ferroélectrique de BaTiO 3 "quasi-amorphe, p.25